|
|
Part: 5SDA06D5007
Category:
Discrete
-> Diodes & Rectifiers
-> General Purpose Diodes
Description:
Company: ABB Semiconductor
Datasheet: Download 5SDA06D5007 datasheet File size : 172 kB
Request For quote: Find where to buy 5SDA06D5007
Datasheet text preview:
Key Parameters VRRM = 5000 IFAVM = 690 I FSM = 7.0 VF0 = 1.10 rF = 1.01
V A kA V m
Avalanche Rectifier Diode
5SDA 06D5007
Doc. No. 5SYA 1125 - 01 Apr-98
Features
· · · · · Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation Self protected against transient overvoltages Guaranteed maximum avalanche power dissipation Industry standard housing
Blocking
Part number VRRM VRSM IRRM PRSM 5SDA 06D5007 5000 5500 5SDA 06D4407 4400 4840 50 70 50 mA kW kW 5SDA 06D3807 3800 4180 Condition f tP tP tP = 50 Hz = 10 ms = 20 µs = 20 µs tP Tj Tj Tj Tj = 10 ms = 160°C = 160°C = 45°C = 160°C
VRRM
Mechanical data
FM a Mounting force min. max. Acceleration Device unclamped Device clamped Weight Surface creepage distance Air strike distance 10 kN 12 kN 50 m/s 2 200 m/s 0.25 kg 30 mm 20.5 mm
2
m DS Da
ABB Semiconductors AG
ABB Semiconductors AG
5SDA 06D5007
On-state
IFAVM IFRMS IFSM It VF0 rF VF min VF max
2
Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Threshold voltage Slope resistance On-state voltage On-state voltage
690 A 1090 A 7.0 k A 7.6 k A 245103 A s
2 2
Half sine wave, TC = 85°C tp tp tp tp IF IF = = = = = 10 ms 8.3 m s 10 ms 8.3 m s 700 - 2000 A A Tj = Tj = 160°C 25°C Tj = 160°C
After surge: VR 0V
24010 A s
3
1.10 V 1.01 m 2.00 V 2.40 V
= 1800
Thermal
Tj RthJC Storage and operating junction temperature range Thermal resistance junction to case RthCH Thermal resistance case to heat sink 80 K/kW 80 K/kW 40 K/kW 16 K/kW 8 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled
45
-40...160°C
Analytical function for transient thermal impedance:
40 Z th
[K/kW]
Fm =10...12 kN Double Side Cooling
ZthJC(t) =
i R (K/kW) i (s) 1 20.95 0.396
Ri(1- e-t / i )
i =1
2 10.57 0.072 3 7.15 0.009 4 1.33 0.0044
4
35 30 25 20 15 10 5 0 10-3
2
3 4 5 67
10-2
2
3 4 5 67
10-1 t [s]
2
3 4 5 56
100
2
3 4 5 67
101
For a given case temperature Tc at ambient temperature Ta the maximum on-state current can be calculated as follows:
IFAVM =
-VF0 +
(VF0)2 + 4 * f * rf * P 2 * f 2 * rf
or
2
IFAVM (A) T max (°C) Rthja (K/kW) f=
2
P (W) Tc (°C) RthJC (K/kW) for DC current for half-sine wave for 120°el., sine for 60° el., sine
VF0 (V) Ta (°C)
rF ()
where
TJ max - TC P= Rthjc
TJ max - TA P= Rthja
1 2.5 3.1 6
Doc. No. 5SYA 1125 - 01 Apr-98
ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306
Others parts begin by 5s
5S-1
|
|
|
