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Part: 5SDA10D2303
Category:
Discrete
-> Diodes & Rectifiers
-> General Purpose Diodes
Description:
Company: ABB Semiconductor
Datasheet: Download 5SDA10D2303 datasheet File size : 172 kB
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Datasheet text preview:
Key Parameters VRRM = 2300 IFAVM = 1140 I FSM = 13.5 VF0 = 0.83 rF = 0.30
V A kA V m
Avalanche Rectifier Diode
5SDA 10D2303
Doc. No. 5SYA 1120 - 01 Apr-98
Features
· · · · · Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation Self protected against transient overvoltages Guaranteed maximum avalanche power dissipation Industry standard housing
Blocking
Part number VRRM VRSM IRRM PRSM 5SDA 10D2303 2300 2530 5SDA 10D2003 2000 2200 50 70 50 mA kW kW 5SDA 10D1703 Condition 1700 1870 f tP tP tP = 50 Hz = 10 ms = 20 µs = 20 µs tP Tj Tj Tj Tj = 10 ms = 160°C = 160°C = 45°C = 160°C
VRRM
Mechanical data
FM a Mounting force min. max. Acceleration Device unclamped Device clamped Weight Surface creepage distance Air strike distance 10 kN 12 kN 50 m/s 2 200 m/s 0.25 kg 30 mm 20.5 mm
2
m DS Da
ABB Semiconductors AG
ABB Semiconductors AG
5SDA 10D2303
On-state
IFAVM IFRMS IFSM It VF0 rF VF min VF max
2
Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Threshold voltage Slope resistance On-state voltage On-state voltage
1140 A 1790 A 13.5 kA 14.5 kA 910103 A s
2 2
Half sine wave, TC = 85°C tp tp tp tp IF IF = = = = 10 ms 8.3 m s 10 ms 8.3 m s Tj = Tj = 160°C 25°C Tj = 160°C
After surge: VR 0V
87510 A s
3
0.83 V 0.30 m 1.20 V 1.35 V
= 1000 - 3000 A = 1800 A
Thermal
Tj RthJC Storage and operating junction temperature range Thermal resistance junction to case RthCH Thermal resistance case to heat sink 80 K/kW 80 K/kW 40 K/kW 16 K/kW 8 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled
45 40 Zth 35 30 25 20 15 Fm =10...12 kN Double Side Cooling
-40...160°C
Analytical function for transient thermal impedance:
ZthJC(t) =
i R (K/kW) i (s) 1 20.95 0.396
R (1- e
i i =1
2 10.57 0.072 3 7.15
4
-t / i
)
4 1.33
[K/kW]
10 5 0 10-3
2 3 4 5 67
0.009
0.0044
10-2
2
3 4 5 67
10-1 t [s]
2
3 4 5 56
100
2
3 4 5 67
101
For a given case temperature Tc at ambient temperature Ta the maximum on-state current can be calculated as follows:
IFAVM =
-VF0 +
(VF0)2 + 4 * f * rf * P 2 * f 2 * rf
or
2
IFAVM (A) T max (°C) Rthja (K/kW) f=
2
P (W) Tc (°C) RthJC (K/kW) for DC current for half-sine wave for 120°el., sine for 60° el., sine
VF0 (V) Ta (°C)
rF ()
where
P=
TJ max - TC Rthjc
P=
TJ max - TA Rthja
1 2.5 3.1 6
Doc. No. 5SYA 1120 - 01 Apr-98
ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306
Others parts begin by 5s
5S-1
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