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Part: 5SDA11D1702
Category:
Discrete
-> Diodes & Rectifiers
-> General Purpose Diodes
Description:
Company: ABB Semiconductor
Datasheet: Download 5SDA11D1702 datasheet File size : 172 kB
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Datasheet text preview:
Key Parameters VRRM = 1700 IFAVM = 1310 I FSM = 15.0 VF0 = 0.74 rF = 0.25
V A kA V m
Avalanche Rectifier Diode
5SDA 11D1702
Doc. No. 5SYA 1119 - 01 Apr-98
Features
· · · · · Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation Self protected against transient overvoltages Guaranteed maximum avalanche power dissipation Industry standard housing
Blocking
Part number VRRM VRSM IRRM PRSM 5SDA 11D1702 1700 1870 5SDA 11D1402 1400 1540 50 70 50 mA kW kW 5SDA 11D1102 Condition 1100 1200 f tP tP tP = 50 Hz = 10 ms = 20 µs = 20 µs tP Tj Tj Tj Tj = 10 ms = 160°C = 160°C = 45°C = 160°C
VRRM
Mechanical data
FM a Mounting force min. max. Acceleration Device unclamped Device clamped Weight Surface creepage distance Air strike distance 10 kN 12 kN 50 m/s 2 200 m/s 0.25 kg 30 mm 20.5 mm
2
m DS Da
ABB Semiconductors AG
ABB Semiconductors AG
5SDA 11D1702
On-state
IFAVM IFRMS IFSM It VF0 rF VF min VF max
2
Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Threshold voltage Slope resistance On-state voltage On-state voltage
1310 A 2060 A 15 kA 16 kA 113010 A s
3 3 2 2
Half sine wave, TC = 85°C tp tp tp tp IF IF = = = = 10 ms 8.3 m s 10 ms 8.3 m s Tj = Tj = 160°C 25°C Tj = 160°C
After surge: VR 0V
107010 A s 0.74 V 0.25 m 1.05 V 1.20 V
= 1000 - 3000 A = 1800 A
Thermal
Tj RthJC Storage and operating junction temperature range Thermal resistance junction to case RthCH Thermal resistance case to heat sink 80 K/kW 80 K/kW 40 K/kW 16 K/kW 8 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled -40...160°C
Analytical function for transient thermal impedance:
45 40 Zth 35 30 25 20 Fm =10...12 kN Double Side Cooling
ZthJC(t) =
i R (K/kW) i (s) 1 20.95 0.396
R (1- e
i i =1
2 10.57 0.072 3 7.15
4
-t / i
)
4 1.33
[K/kW]
15 10 5 0 10-3
2 3 4 5 67
0.009
0.0044
10-2
2
3 4 5 67
10-1 t [s]
2
3 4 5 56
100
2
3 4 5 67
101
For a given case temperature Tc at ambient temperature Ta the maximum on-state current can be calculated as follows:
IFAVM =
-VF0 +
(VF0)2 + 4 * f * rf * P 2 * f 2 * rf
or
2
IFAVM (A) T max (°C) Rthja (K/kW) f=
2
P (W) Tc (°C) RthJC (K/kW) for DC current for half-sine wave for 120°el., sine for 60° el., sine
VF0 (V) Ta (°C)
rF ()
where
P=
TJ max - TC Rthjc
P=
TJ max - TA Rthja
1 2.5 3.1 6
Doc. No. 5SYA 1119-01 Feb-98
ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306
Others parts begin by 5s
5S-1
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