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Part: 5SDA27F2002
Category:
Discrete
-> Diodes & Rectifiers
-> General Purpose Diodes
Description:
Company: ABB Semiconductor
Datasheet: Download 5SDA27F2002 datasheet File size : 172 kB
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Datasheet text preview:
Key Parameters VRRM = 2000 IFAVM = 2700 I FSM = 31.0 VF0 = 0.79 rF = 0.09
V A kA V m
Avalanche Rectifier Diode
5SDA 27F2002
Doc. No. 5SYA 1127 - 01 Apr-98
Features
· · · · · Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation Self protected against transient overvoltages Guaranteed maximum avalanche power dissipation Industry standard housing
Blocking
Part number VRRM VRSM IRRM PRSM 5SDA 27F2002 2000 2200 5SDA 27F1702 1700 1870 50 140 100 mA kW kW 5SDA 27F1402 1400 1540 Condition f tP tP tP = 50 Hz = 10 ms = 20 µs = 20 µs tP Tj Tj Tj Tj = 10 ms = 160°C = 160°C = 45°C = 160°C
VRRM
Mechanical data
FM a Mounting force min. max. Acceleration Device unclamped Device clamped Weight Surface creepage distance Air strike distance 20 kN 24 kN 50 m/s2 200 m/s2 0.5 k g 30 mm 20 mm
m DS Da
ABB Semiconductors AG
ABB Semiconductors AG
5SDA 27F2002
On-state
IFAVM IFRMS IFSM It VF0 rF VF min VF max
2
Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Threshold voltage Slope resistance On-state voltage On-state voltage
2700 A 4240 A 31.0 kA 33.5 kA 4805103 A s
2
Half sine wave, TC = 85°C tp tp tp tp IF IF = = = = 10 ms 8.3 m s 10 ms 8.3 m s Tj = Tj = 160°C 25°C Tj = 160°C
After surge: VR 0V
468010 A s
3 2
0.79 V 0.09 m 1.05 V 1.20 V
= 2000 - 6000 A = 4000 A
Thermal
Tj RthJC Storage and operating junction temperature range Thermal resistance junction to case RthCH Thermal resistance case to heat sink 40 K/kW Anode side cooled 40 K/kW Cathode side cooled 20 K/kW Double side cooled 10 K/kW Single side cooled 5 K/kW Double side cooled -40...160°C
Analytical function for transient thermal impedance:
24 Zth Fm = 20...24 kN 20 16 12 8 Double Side Cooling
ZthJC(t) =
i R (K/kW) i (s) 1 11.83 0.432
R (1- e
i i =1
2 4.26 0.071 3 1.63 0.01
4
-t / i
[K/kW]
)
4 2.28
4 0 10-3
0.0054
2
3 4 5 67
10-2
2
3 4 5 67
10-1 t [s]
2
3 4 5 56
100
2
3 4 5 67
101
For a given case temperature Tc at ambient temperature Ta the maximum on-state current can be calculated as follows:
IFAVM =
-VF0 +
(VF0)2 + 4 * f * rf * P 2 * f 2 * rf
or
2
IFAVM (A) T max (°C) Rthja (K/kW) f=
2
P (W) Tc (°C) RthJC (K/kW) for DC current for half-sine wave for 120°el., sine for 60° el., sine
VF0 (V) Ta (°C)
rF ()
where
TJ max - TC P= Rthjc
TJ max - TA P= Rthja
1 2.5 3.1 6
Doc. No. 5SYA 1127 - 01 Apr-98
ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306
Others parts begin by 5s
5S-1
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