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Part: 5SDD0120C0200
Category:
Discrete
-> Diodes & Rectifiers
Description:
Company: ABB Semiconductor
Datasheet: Download 5SDD0120C0200 datasheet File size : 172 kB
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Datasheet text preview:
VRRM IFAVM I FRMS I FSM VF0 rF
= = = = = =
200 V 11000 A 17300 A 85000 A 0.75 V 0.020 m
Rectifier Diode
5SDD 0120C0200
Doc. No. 5SYA1157-01 Oct.00
· Optimized for high current rectifiers · Very low on-state voltage · Very low thermal resistance
Blocking
VRRM VRSM I RRM Repetitive peak reverse voltage Maximum peak reverse voltage Repetitive peak reverse current 200 V 300 V 50 mA Half sine wave, tP = 10 ms, f = 50 Hz Half sine wave, tP = 10 ms Tj = 170 °C VR = VRRM
Mechanical
FM a Mounting force min. max. Acceleration: Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 200 m/s2 0.22 kg 4 mm 4 mm 35 kN 40 kN
Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
ABB Semiconductors AG reserves the right to change specifications without notice.
5SDD 0120C0200
On-state
IFAVM IFRMS IFSM òI dt VF max VF0 rF
2
Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current
11000 A 17300 A 85000 A 92500 A
2
Half sine wave, Tc = 85 °C tp = tp = 10 ms Before surge 8.3 ms Tj = 170 °C 10 ms After surge:
Max. surge current integral
36100 kA s tp = 35700 kA2s tp =
8.3 ms VR 0V 8000 A Tj = 170 °C
Maximum on-state voltage Threshold voltage Slope resistance
0.92 V 0.75 V 0.020 m
IF =
Approximation for Tj = 170 °C IF = 8 - 18 kA
Thermal characteristics
Tj Tstg RthJC Operating junction temperature range Storage temperature range Thermal resistance junction to case -40...170 °C -40...170 °C RthCH Thermal resistance case to heatsink 12 K/kW Anode side cooled 12 K/kW Cathode side cooled 6 K/kW Double side cooled 6 K/kW Single side cooled 3 K/kW Double side cooled FM = 35...40 kN
ZthJC [K/kW]
8 Double sided cooling Fm = 35...40 kN
Z thJC (t) =
i 1 3.37 0.095 Ri (K/kW)
5SDD 0120C0200
å
4
R i(1 - e - t / i )
2 3 0.63 0.0035 4 0.67 0.001
6
i=1
1.50 0.048
4
2
i (s)
FM = 35...40 kN Double side cooled
0 10-3
10- 2
10-1
0 t [s] 10
Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms.
ABB Semiconductors AG reserves the right to change specifications without notice.
page 2 of 4 Doc. No. 5SYA1157-01 Oct.00
5SDD 0120C0200
On-state characteristics
IF [A]
18000 16000 14000 12000 10000 8000
min.
Surge current characteristics
IFSM [kA]
140
5SDD 0120C0200
ò i2dt [MA2s]
Tj = 170°C
120
max.
IFSM
òi2t
44
40
Tj = 170°C
100 36
80
6000
5SDD 0120C0200
32
4000 2000 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
60
28
40 100 101
24
VF [V]
1.6
t [ms]
102
Fig. 3
Forward current vs. forward voltage (min. and max. values).
Fig. 4 Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses.
Current load capability
I D ( kA )
28 26 24 22 20 18 16
5SDD 0120C0200
ID vs. ED, 1000 Hz square wave, TC = 100 °C
n n n n = 50 = 100 = 500 = 1000 p u ls es p u ls es p u ls es p u ls es
1
10
Duty cycle ED (%) 1 0 0
Fig. 5
DC-output current with single-phase centre tap
ABB Semiconductors AG reserves the right to change specifications without notice.
page 3 of 4
Doc. No. 5SYA1157-01 Oct.00
5SDD 0120C0200
Current load capacity, cont.
ID ( k A )
36 34 32 30 28 26 24 22 20 18 16 1 10
5SDD 0120C0200
ID vs. ED, 1000 Hz square-wave, Th = 60 °C
n = 50 pulses n = 100 pulses n = 500 pulses n = 1000 pulses
Duty cycle ED (%) 1 0 0
Fig. 6
DC-output current with single-phase centre tap
ID +
Fig. 7 Definition of ED for typical welding sequence
Fig. 8 Definition of ID for single-phase centre tap
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306 Email abbsem@ch.abb.com Internet www.abbsem.com
Doc. No. 5SYA1157-01 Oct.00
Others parts begin by 5s
5S-1
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