|
|
Part: 5SDD11D2800
Category:
Description:
Company: ABB Semiconductor
Datasheet: Download 5SDD11D2800 datasheet File size : 172 kB
Request For quote: Find where to buy 5SDD11D2800
Datasheet text preview:
VRSM IFAVM I FRMS I FSM VF0 rF
= = = = = =
3000 1285 2019 16×103 0.933 0.242
V A A A V m
Rectifier Diode
5SDD 11D2800
Doc. No. 5SYA1166-00 Jan. 03
· Very low on-state losses · Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter Repetetive peak reverse voltage
Characteristic values
Symbol Conditions VRRM f = 50 Hz, tp = 10ms, Tj = -40...160°C f = 5 Hz, tp = 10ms, Tj = -40...160°C min typ
Value 2800 3000 max 30
Un i t V V Un i t mA
Non - repetetive peak reverse voltage VRSM Parameter Max. (reverse) leakage current
Symbol Conditions IRRM VRRM, Tj = 160°C
Mechanical data
Maximum rated values
1)
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions FM a a Device unclamped Device clamped
min 8
typ 10
max 12 50 100
Un i t kN m/s m/s Un i t kg mm mm mm mm
2 2
Parameter W eight Housing thickness Pole-piece diameter Surface creepage distance
Symbol Conditions m H DP DS
min
typ 0.3 26 34
max
33
Air strike distance Da 18 1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SDD 11D2800
On-state
Maximum rated values
1)
Parameter Max. average on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral
Characteristic values
Symbol Conditions IFAVM 50 Hz, Half sine wave, TC = 85 °C
min
typ
max
1285 2019
Un i t A A A A2s A A2s Un i t V V m
Max. RMS on-state current IFRMS IFSM I2t IFSM I2t Symbol Conditions VF V(T0) rT IF = 1500 A, Tj = 160°C Tj = 160°C IT = 1500...4500 A min typ tp = 8.3 ms, Tj = 160°C, VR = 0 V tp = 10 ms, Tj = 160°C, VR = 0 V
16×10 1.066×10 15×10 1.125×10
3
6 3
6
Parameter On-state voltage Threshold voltage Slope resistance
max
1.3 0.933 0.242
Switching
Characteristic values
Parameter
Symbol Conditions Q rr diF/dt = -30 A/µs, VR = 100 V
min
typ 2200
max 3000
Un i t µAs
Recovery charge
IFRM = 1000 A, Tj = 160°C
Thermal
Maximum rated values
1)
Parameter Operating junction temperature range
Characteristic values
Symbol Conditions Tvj
min -40 -40 min
typ
max 160 175
Un i t °C °C Un i t K/kW K/kW K/kW K/kW K/kW
Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled
typ
max 32 50 88 8 16
Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h)
Analytical function for transient thermal impedance:
ZthJC(t) = å Ri(1 - e -t/ i )
i =1
i Ri(K/kW ) i(s) 1 11.600 0.7033 2 10.110 0.2185 3 7.870 0.0588 4 2.410 0.0042 Fig. 1 Transient thermal impedance junction-tocase.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1166-00 Jan. 03 page 2 of 5
n
5SDD 11D2800
9000 25 °C 160 °C 8000 7000 6000 5000 4000 3000 2000 1000 0 0 1 2 VF (V) 3
0 1 10 t ( ms ) 0 100 5 0,5 15 160 °C 1,5 20 IFSM ( kA ) 30 I FSM 25°C 25 160°C ò i dt 25°C 2
2
IF ( A )
3 i 2dt (106 A2s )
2,5
10
1
Fig. 2 Max. on-state characteristics.
Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, VR = 0 V
PT ( W ) 2500
PT ( W )
2500
60°
120° 180° DC
2000
2000
= 30° 60° 90° 120° 180° 270° DC
1500
1500
1000
1000
500
500
0 0 400 800 1200
0
I F AV ( A )
1600
0
500
1000
I FA V ( A )
1500
Fig. 4 Forward power loss vs. average forward current, sine waveform, f = 50 Hz
Fig. 5 Forward power loss vs. average forward current, square waveform, f = 50 Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1166-00 Jan. 03 page 3 of 5
5SDD 11D2800
TC ( °C ) TC ( °C )
170 160 150 140 130 120 110 100 90 80 70 60 0 400 800 170 160 150 140 130 120 110 100
DC
90 80 70
DC 270° 180°
0 400
60°
1200
120°180° I FA V ( A )
1600
60
= 30°
800
60°
90° 120°
1200
I FA V ( A )
1600
Fig. 6 Max. case temperature vs aver. forward current, sine waveform, f = 50 Hz
1 00 0 0 Qrr ( µC )
Fig. 7 Max. case temperature vs aver. forward current, square waveform, f = 50 Hz
1 00 0 IrrM ( A ) 10 0
10 0 0
max
max
min
min
100 1 10 dI F /dt ( A/µs ) 100
10 1 10 dI F /dt ( A/µs ) 100
Fig. 8 Reverse recovery charge vs. dIF/dt, IF= 1000 A; Tj = Tjmax, limit values
Fig. 9 Peak reverse recovery current vs. diF/dt, IF = 1000 A; Tj = Tjmax, limit values
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1166-00 Jan. 03 page 4 of 5
5SDD 11D2800
Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. No. 5SYA1166-00 Jan. 03
Others parts begin by 5s
5S-1
|
|
|
