|
|
Part: 5SDD20F5000
Category:
Discrete
-> Diodes & Rectifiers
-> Rectifier Diodes
Description:
Company: ABB Semiconductor
Datasheet: Download 5SDD20F5000 datasheet File size : 172 kB
Request For quote: Find where to buy 5SDD20F5000
Datasheet text preview:
VRSM IFAVM I FRMS I FSM VF0 rF
= 5200 = 1978 = 3106 = 25.6×103 = 0.94 = 0.284
V A A A V m
Rectifier Diode
5SDD 20F5000
Doc. No. 5SYA1162-01 Jan. 03
· Very low on-state losses · Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter Repetetive peak reverse voltage
Characteristic values
Symbol Conditions VRRM f = 50 Hz, tp = 10ms, Tj = -40...160°C f = 5 Hz, tp = 10ms, Tj = -40...160°C min typ
Value 5000 5200 max 50
Un i t V V Un i t mA
Non - repetetive peak reverse voltage VRSM Parameter Max. (reverse) leakage current
Symbol Conditions IRRM VRRM, Tj = 160°C
Mechanical data
Maximum rated values
1)
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions FM a a Device unclamped Device clamped
min 20
typ 22
max 24 50 100
Un i t kN m/s m/s Un i t kg mm mm mm mm
2 2
Parameter W eight Housing thickness Pole-piece diameter Surface creepage distance
Symbol Conditions m H DP DS
min
typ 0.5 26 47
max
33
Air strike distance Da 18 1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SDD 20F5000
On-state
Maximum rated values
1)
Parameter Max. average on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral
Characteristic values
Symbol Conditions IFAVM 50 Hz, Half sine wave, TC = 85 °C
min
typ
max
1978 3106
Un i t A A A A2s A A2s Un i t V V m
Max. RMS on-state current IFRMS IFSM I2t IFSM I2t Symbol Conditions VF V(T0) rT IF = 4000 A, Tj = 160°C Tj = 160°C IT = 2827...8480 A min typ tp = 8.3 ms, Tj = 160°C, VR = 0 V tp = 10 ms, Tj = 160°C, VR = 0 V
25.6×10 2.727×10 24×10 2.88×10
3
6 3
6
Parameter On-state voltage Threshold voltage Slope resistance
max
2.1 0.94 0.284
Switching
Characteristic values
Parameter
Symbol Conditions Q rr diF/dt = -30 A/µs, VR = 100 V
min
typ 4500
max 5500
Un i t µAs
Recovery charge
IFRM = 1000 A, Tj = 160°C
Thermal
Maximum rated values
1)
Parameter Operating junction temperature range
Characteristic values
Symbol Conditions Tvj
min -40 -40 min
typ
max 160 160
Un i t °C °C Un i t K/kW K/kW K/kW K/kW K/kW
Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled
typ
max 15 24 40 4 8
Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h)
Analytical function for transient thermal impedance:
ZthJC(t) = å Ri(1 - e -t/ i )
i =1
i Ri(K/kW ) i(s) 1 6.060 0.6937 2 3.850 0.2040 3 3.780 0.0452 4 1.320 0.0040 Fig. 1 Transient thermal impedance junction-tocase.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1162-01 Jan. 03 page 2 of 5
n
5SDD 20F5000
10 0 0 0 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 0 1 2 3 VF 4 (V)
10 1 10 t ( ms ) 2 100 25 3,5
25 °C
IF ( A )
50 IFSM ( kA )
160 °C
6 I FSM 25°C ò i2dt 25°C i 2dt (106 A2s )
45
5,5
40 160°C 160 °C 30
5
35
4,5
4
20
3
15
2,5
Fig. 2 Max. on-state characteristics.
Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, VR = 0 V
PT ( W ) 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0
PT ( W )
5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 400 800 1200
60°
120° 180° DC
= 30° 60° 90° 120°
180° 270° DC
1600
2000
I F AV ( A )
2400
0
400
800
1200
1600
2000
I FA V ( A )
2400
Fig. 4 Forward power loss vs. average forward current, sine waveform, f = 50 Hz
Fig. 5 Forward power loss vs. average forward current, square waveform, f = 50 Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1162-01 Jan. 03 page 3 of 5
5SDD 20F5000
TC ( °C ) TC ( °C )
170 160 150 140 130 120 110 100 90 80 70 60 0 400 800 1200 170 160 150 140 130 120 110
DC
100 90 80 70
DC 270° 180°
60°
1600
120°
2000
180°
60 0 400 800
I FA V ( A )
2400
= 30°
1200
60°
1600
90° 120°
2000
I FA V ( A )
2400
Fig. 6 Max. case temperature vs aver. forward current, sine waveform, f = 50 Hz
1 00 0 0 Qrr ( µC )
max
Fig. 7 Max. case temperature vs aver. forward current, square waveform, f = 50 Hz
1 00 0 IrrM ( A )
max
min
min
10 0 0
10 0
100 1 10 dI F /dt ( A/µs ) 100
10 1 10 dI F /dt ( A/µs ) 100
Fig. 8 Reverse recovery charge vs. dIF/dt, IF= 1000 A; Tj = Tjmax, limit values
Fig. 9 Peak reverse recovery current vs. diF/dt, IF = 1000 A; Tj = Tjmax, limit values
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1162-01 Jan. 03 page 4 of 5
5SDD 20F5000
Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. No. 5SYA1162-01 Jan. 03
Others parts begin by 5s
5S-1
|
|
|
