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Part: 5SDD33L5500
Category:
Description:
Company: ABB Semiconductor
Datasheet: Download 5SDD33L5500 datasheet File size : 368 kB
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Datasheet text preview:
VRSM IFAVM I FRMS I FSM VF0 rF
= = = = = =
5500 3480 5470 46·10 3 0.94 0.147
V A A A V m
Rectifier Diode
5SDD 33L5500
Doc. No. 5SYA1168-00 Dec. 02
· Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter Repetetive peak reverse voltage
Characteristic values
Symbol Conditions VRRM f = 50 Hz, tp = 10ms, Tj = 0...150°C f = 5 Hz, tp = 10ms, Tj = 0...150°C min typ
Value 5000 5500 max 400
Un i t V V Un i t mA
Non - repetetive peak reverse voltage VRSM Parameter Max. (reverse) leakage current
Symbol Conditions IRRM VRRM, Tj = 150°C
Mechanical data
Maximum rated values
1)
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions FM a a Device unclamped Device clamped
min 63
typ 70
max 77 50 100
Un i t kN m/s m/s Un i t kg mm mm mm mm
2 2
Parameter W eight Housing thickness Pole-piece diameter Surface creepage distance
Symbol Conditions m H DP DS
min
typ 26 78
max 1.45 26.8
35
Air strike distance Da 14 1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SDD 33L5500
On-state
Maximum rated values
1)
Parameter Max. average on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral
Characteristic values
Symbol Conditions IFAVM 50 Hz, Half sine wave, TC = 90 °C
min
typ
max
3480 5470
Un i t A A A A2s A A2s Un i t V V m
Max. RMS on-state current IFRMS IFSM I2t IFSM I2t Symbol Conditions VF V(T0) rT IF = 5000 A, Tj = 150°C Tj = 150°C IT = 3000...8000 A min typ tp = 8.3 ms, Tj = 150°C, VR = 0 V tp = 10 ms, Tj = 150°C, VR = 0 V
46·10 10.6·10 49.2·10 10.06·10
3
6 3
6
Parameter On-state voltage Threshold voltage Slope resistance
max
1.68 0.94 0.147
Switching
Characteristic values
Parameter
Symbol Conditions Q rr diF/dt = -10 A/µs, VR = 200 V
min
typ
max 10000
Un i t µAs
Recovery charge
IFRM = 4000 A, Tj = 150°C
Thermal
Maximum rated values
1)
Parameter Operating junction temperature range
Characteristic values
Symbol Conditions Tvj
min 0 -40 min
typ
max 150 150
Un i t °C °C Un i t K/kW K/kW K/kW K/kW K/kW
Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled
typ
max 7 14 14 1.5 3
Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h)
Analytical function for transient thermal impedance:
ZthJC(t) = å Ri(1 - e -t/ i )
i =1
i Ri(K/kW ) i(s) 1 4.701 0.5463 2 1.401 0.0746 3 0.611 0.0087 4 0.298 0.0021 Fig. 1 Transient thermal impedance junction-tocase.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1168-00 Dec. 02 page 2 of 5
n
5SDD 33L5500
On-state characteristic model:
VF = ATvj + BTvj I F + CTvj ln(I F +1) + DTvj I F
A25 -6 -352.2·10 A150 -6 95.95·10 Valid for iT = 300 70000 A B25 C25 D25 -6 -3 -3 384.6·10 127.1·10 4.469·10 B150 C150 D150 -6 -3 -3 89.84·10 90.5·10 6.605·10
Fig. 2 Isothermal on-state characteristics
Fig. 3 Isothermal on-state characteristics
Fig. 4 On-state power losses vs average on-state current.
Fig. 5 Max. permissible case temperature vs average on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1168-00 Dec. 02 page 3 of 5
5SDD 33L5500
Fig. 6 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz.
Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz.
Fig. 8 Recovery charge vs. decay rate of on-state current.
Fig. 9 Peak reverse recovery current vs. decay rate of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1168-00 Dec. 02 page 4 of 5
5SDD 33L5500
Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1168-00 Dec. 02
page 5 of 5
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Others parts begin by 5s
5S-1
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