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Part: 5SDD51L2800
Category:
Discrete
-> Diodes & Rectifiers
-> General Purpose Diodes
Description:
Company: ABB Semiconductor
Datasheet: Download 5SDD51L2800 datasheet File size : 368 kB
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Datasheet text preview:
VRSM = IFAVM = I FRMS = I FSM VF0 rF = = =
2800 V 5150 A 8080 A 65 kA 0.77 V 0.082 m
Rectifier Diode
5SDD 51L2800
Doc. No. 5SYA1103-01 Sep. 01
· · ·
Patented free-floating silicon technology Very low on-state losses High average and surge current.
Blocking
Part Number VRRM VRSM VRSM I RRM
Tvj = -40°C reduces VRSM and VRRM by 5%.
5SDD 51L2800 2000 V 2800 V 3000 V
5SDD 51L2600 1850 V 2600 V 2800 V 400 mA
5STP 51L2200 1600 V 2200 V 2400 V
Conditions f = 50 Hz, tp = 10ms tp = 10ms tp 5ms VRRM Tj = 175°C Tj = 0-175°C
Mechanical data
nom. Fm a Mounting force min. max. 70 kN 63 kN 77 kN
Acceleration Device unclamped Device clamped m/s2 100 m/s2
78 mm 27 mm 1.45 kg 35 mm 14 mm
Dp H m Ds Da
Pole-piece diameter Housing thickness W eight IGCT Surface creepage distance Air strike distance
ABB Semiconductors AG reserves the right to change specifications without notice.
5SDD 51L2800
On-state
IFAVM IFRMS IFSM It
2
Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral
5150 A 8080 A 65 kA 70 kA 21125 kA s 20335 kA s
2 2
50 Hz, TC = 90°C, Half sine wave
tp tp tp tp IF IF
= = = = = =
10 ms Tj = 175°C 8.3 ms After surge: 10 ms VR = 0V 8.3 ms 5000 A 2500 - 7500 A Tj = 175°C
VF VF0 rF
On-state voltage Threshold voltage Slope resistance
1.18 V 0.77 V 0.082 m
Switching
Qrr Recovery charge max 7000 µAs diF/dt = -10A/µs IFRM = 4000A 175 °C -40...150 °C 16 K/kW 16 K/kW 8 K/kW RthCH Thermal resistance case to heat sink
Analytical function for transient thermal impedance:
VR = 200 V Tj = 175°C
Thermal
Tjmax Tstg RthJC Max. operating junction temperature range Storage temperature range Thermal resistance junction to case
Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled
6 K/kW 3 K/kW
ZthJC(t) = å Ri(1 - e -t/ i )
i =1
i Ri(K/kW ) i(s) 1 3.5 1.0231 2 3.5 0.5199 3 1 0.016 Fig. 1 Transient thermal impedance junction to case. 4
n
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1103-01 Sep. 01 page 2 of 5
5SDD 51L2800
On-state characteristic model:
VT = A + B iT + C ln(iT +1) + D IT
Valid for iT = 0 30000 A A 2.158 B 0.398 C 3.158 D -3.626
Fig. 2 On-state characteristics.
Fig. 3 On-state characteristics.
Fig. 4 On-state power losses vs average onstate current.
Fig. 5 Max. permissible case temperature vs average on-state current.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1103-01 Sep. 01 page 3 of 5
5SDD 51L2800
Fig. 6 Surge on-state current vs. pulse length. Half-sine wave.
Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1103-01 Sep. 01 page 4 of 5
5SDD 51L2800
Fig. 8 Recovery charge vs. decay rate of onstate current.
Fig. 9 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com
Doc. No. 5SYA1103-01 Sep. 01
Others parts begin by 5s
5S-1
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