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Part: 5SDD60N2800
Category:
Discrete
-> Diodes & Rectifiers
-> Rectifier Diodes
Description:
Company: ABB Semiconductor
Datasheet: Download 5SDD60N2800 datasheet File size : 368 kB
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Datasheet text preview:
VRSM = IFAVM = IFRMS = IFSM VF0 rF = = =
2800 V 6830 A 1073 A 0 8700 A 0 0.80 V 0.050 m
Rectifier Diode
5SDD 60N2800
Doc. No. 5SYA1155-01 Oct.00
· Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability
Blocking
Part Number VRRM VRSM IRRM 5SDD 60N2800 2000 V 2800 V 5SDD 60N2600 1850 V 2600 V 400 mA 5SDD 60N2200 1600 V 2200 V Conditions f = 50 Hz, tp = 10ms f = 5 Hz, tp = 10ms VRR Tj = 160°C
Mechanical data
FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s 2 100 m/s 2 2.9 kg 56 mm 22 mm 90 kN 81 kN 108 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
5SDD 60N2800
On-state
IFAVM IFRMS IFSM I2t VF VF0 rF Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral On-state voltage Threshold voltage Slope resistance 6830 A 10730 A 87000 A 95000 A 38500 kA2s 38000 kA2s 1.05 V 0.80 V 0.050 m tp tp tp tp IF IF = = = = = = 10 ms Tj = 160°C 8.3 ms After surge: 10 ms VR = 0V 8.3 ms 5000 A 2500 - 7500 A Tj = 160°C Half sine wave, TC = 90°C
Switching
Qrr Recovery charge min max 4400 µAs 6300 µAs diF/dt = -10A/µs IFRM = 4000A VR = 200 V Tj = 160°C
Thermal
Tj max Tj stg R thJC Max. junction temperature Storage temperature range Thermal resistance junction to case R thCH Thermal resistance case to heat sink Analytical function for transient thermal impedance: 160°C -40...175°C 11.4 K/kW 11.4 K/kW 5.7 K/kW 2 K/kW 1 K/kW
Z thJ C [K /k W] 6 5 4 3 2 18 0° si ne : ad d 0. 5 K /kW 18 0° re cta ng u lar: ad d 0.5 K /kW 12 0° re cta ng u lar: ad d 0.8 K /kW 6 0° re cta ng u lar: ad d 1.5 K /kW
Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled
ZthJC(t) = R i(1 - e - t/ i )
i =1
i Ri (K/kW) i (s) 1 3.4 0.8685 2 1.26 0.1572 3 0.68 0.0219 4 0.35 0.0078
n
1 0 0.001
Fm = 8 1..1 08 k N Do u bl e- sid e co o lin g
TN 1
0 .01 0
0 .100
1.0 00
10.0 00 t [ s]
Fig. 1 Transient thermal impedance junction to case.
ABB Semiconductors AG reserves the right to change specifications without notice. 2 of 4
Doc. No. 5SYA1155-01 Oct.00
5SDD 60N2800
5S DD 60N2800
Fig 2. On-state characteristics.
Pf (W)
Fig. 3 On state characteristics.
Fig. 4
On-state power dissipation vs. mean onstate current. Turn-on losses excluded.
Fig. 5
Max. permissible case temperature vs. mean on-state current.
ABB Semiconductors AG reserves the right to change specifications without notice. 3 of 4
Doc. No. 5SYA1155-01 Oct.00
5SDD 60N2800
5SDD 60N2800
IFSM [kA]
150 140 130 120 110 100 90 80 70 60 50 100
5SDD 60N2800
i2 dt [MA 2s ]
50
IFSM (k A)
90 80 70 60
IFSM
Tj = 160°C
48 46 44 42
Tj = 160°C
50
40 38 36 34
40 30 20 10 0
5 SDD 60N2800
i2t
32 30 101
t [ms]
102
1
2
3
4
5
6 7 8 10
np
20
Fig. 6
Surge on-state current vs. pulse length. Half-sine wave.
Fig. 7
Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz.
Qr r (µ As)
30000 20000
I F RM = 4000 A Tj = Tjma x
I R M (A)
103 80 0 70 0 60 0 50 0 40 0 30 0
I FRM = 4000 A Tj = T jma x
104 8000 7000 6000 5000
5S DD 60N2800
20 0
3000 2000 1
2
3
4
5 6 7 8 910
- di F /d t (A /µ s)
20
30
30
1
2
3
4
5 6 7 8 9 10
- di F /dt (A /µs)
20
30
Fig. 8
Recovery charge vs. decay rate of ons tate current.
Fig. 9
Peak reverse recovery current vs. decay rate of on-state current.
ABB Semiconductors reserves the right to change specifications without notice.
ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306 Email Info@ch.abb.com Internet www.abbsem.com
Doc. No. 5SYA1155-01 Oct.00
5S DD 60N2800
4000
102 80 70 60
Others parts begin by 5s
5S-1
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