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Part: 5SDD60Q2800
Category:
Discrete
-> Diodes & Rectifiers
-> Rectifier Diodes
Description:
Company: ABB Semiconductor
Datasheet: Download 5SDD60Q2800 datasheet File size : 368 kB
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Datasheet text preview:
VRSM = IFAVM = IFRMS = IFSM VF0 rF = = =
2800 V 7385 A 11600 A 87000 A 0.80 V 0.050 m
Rectifier Diode
5SDD 60Q2800
Doc. No. 5SYA1161-01 Nov.00
· Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability
Blocking
Part Number VRRM VRSM IRRM 5SDD 60Q2800 2000 V 2800 V 5SDD 60Q2600 1850 V 2600 V 400 mA 5SDD 60Q2200 1600 V 2200 V Conditions f = 50 Hz, tp = 10ms f = 5 Hz, tp = 10ms VRRM Tj = 160°C
Mechanical data
FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 100 m/s2 2.9 k g 56 mm 22 mm 90 kN 81 kN 108 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
5SDD 60Q2800
On-state
I FAVM IFRMS I FSM I2t Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral 7385 A 11600 A 87000 A 95000 A 38500 kA2s 38000 kA2s VF VF0 rF On-state voltage Threshold voltage Slope resistance 1.05 V 0.80 V 0.050 m tp tp tp tp IF IF = = = = = = 10 ms Tj = 160°C Half sine wave, TC = 90°C
8.3 ms After surge: 10 ms VD = VR = 0V 8 . 3 ms 5000 A 2500 - 7500 A Tj = 160°C
Switching
Qrr Recovery charge min max 4400 µAs 6300 µAs diF/dt = -10A/µs IFRM = 4000A VR = 200 V Tj = 160°C
Thermal
Tj max Tj stg RthJC Max. junction temperature Storage temperature range Thermal resistance junction to case 160°C -40...175°C 10 K/kW 10 K/kW 5 K/kW RthCH Thermal resistance case to heat sink Analytical function for transient thermal impedance: 2 K/kW 1 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled
ZthJC(t) = Ri(1 - e -t/ i )
i =1
i Ri(K/kW) i(s) 1 3.27 0.5237 2 0.74 0.1082 3 0.66 0.02 4 0.31 0.0075 Fig. 1 Transient thermal impedance junction to case.
D Q1
n
ABB Semiconductors AG reserves the right to change specifications without notice. 2 of 4
Doc. No. 5SYA1161-01 Nov.00
5SDD 60Q2800
5SDD 60Q2800
Fig 2. On-state characteristics.
Pf (W)
Fig. 3 On-state characteristics.
Tcase (°C)
165 160 155 150 145 140 135 130 125 120 115 110 105
5SDD 60Q2800
Double-sided cooling
DC 18 0° rectangular 18 0° sine 12 0° rectangular
100 95 90 0 200 0 4000 6000 800 0 1 0000
1 2000
IF AV (A)
Fig. 4
On-state power dissipation vs. mean on-state current. Turn-on losses excluded.
Fig. 5
Max. permissible case temperature vs. mean on-state current.
ABB Semiconductors AG reserves the right to change specifications without notice. 3 of 4
Doc. No. 5SYA1161-01 Nov.00
5S DD 60Q2800
5SDD 60Q2800
5SDD 60Q2800
IFSM [kA]
150 140 130 120 110 100 90 80 70 60 50 100
5SDD 60Q2800
i2dt [MA2s]
50
I FS M ( k A )
90 80 70
IFSM
Tj = 160°C
48 46 44
Tj = 160°C
60
42 40 38 36 34
50 40 30 20 10 0
5SDD 60Q2800
i2t
32 30 101
t [ms]
102
1
2
3
4
5
6 7 8 10
np
20
Fig. 6
Surge on-state current vs. pulse length. Half-sine wave.
Fig. 7
Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz.
I RM (A)
I FRM = 4000 A Tj = Tjmax
Qr r (µAs)
30000 20000
I FRM = 4000 A Tj = Tjmax
700 600 500 400 300 200
104 8000 7000 6000 5000
5SDD 60Q2800
3000 2000 1
2
3
4
5 6 7 8 9 10
- d i F /d t (A /µs)
20
30
30
1
2
3
4
5 6 7 8 910
20
30
-diF /dt(A/µs)
Fig. 8
Recovery charge vs. decay rate of onstate current.
Fig. 9
Peak reverse recovery current vs. decay rate of on-state current.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306 Email Info@ch.abb.com Internet www.abbsem.com
Doc. No. 5SYA1161-01 Nov.00
5SDD 60Q2800
4000
102 80 70 60 50 40
Others parts begin by 5s
5S-1
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