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Part: 5SDF05D2501
Category:
Discrete
-> Diodes & Rectifiers
-> General Purpose Diodes
Description:
Company: ABB Semiconductor
Datasheet: Download 5SDF05D2501 datasheet File size : 368 kB
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Datasheet text preview:
VRRM IFAVM I FSM VF0 rF VDClink
= = = = = =
2500 490 8.5×103 1.4 0.52 1100
V A A V m V
Fast Recovery Diode
5SDF 05D2501
Doc. No. 5SYA1112-03 Jan. 03
· Patented free-floating silicon technology · Low switching losses · Optimized for use as snubber diode in GTO converters · Industry standard press-pack ceramic housing, hermetically cold-welded · Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter Repetetive peak reverse voltage Permanent DC voltage for 100 FIT failure rate Permanent DC voltage for 100 FIT failure rate
Characteristic values
Symbol Conditions VRRM VDClink VDClink f = 50 Hz, tp = 10ms, Tj = 125°C Ambient cosmic radiation at sea level in open air. (100% Duty) Ambient cosmic radiation at sea level in open air. (5% Duty) min typ
Value 2500 1100 1500 max 50
Un i t V V V Un i t mA
Parameter Repetitive peak reverse current
Symbol Conditions IRRM VR = VRRM, Tj = 125°C
Mechanical data
Maximum rated values
1)
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions FM a a Device unclamped Device clamped
min 10
typ 11
max 12 50 200
Un i t kN m/s m/s Un i t kg mm mm mm mm
2 2
Parameter W eight Housing thickness Pole-piece diameter Surface creepage distance
Symbol Conditions m H DP DS
min
typ 0.25 26 34
max
30
Air strike distance Da 20 1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SDF 05D2501
On-state
Maximum rated values
1)
Parameter Max. average on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral
Characteristic values
Symbol Conditions IFAVM Half sine wave, TC = 85 °C
min
typ
max 490 770
Un i t A A A A2s A A2s Un i t V V m
Max. RMS on-state current IFRMS IFSM I2t IFSM I2t VR 0 V tp = 10 ms, Tj = 125°C,
8.5×10 360×10
3
3 3
tp = 1 ms, Tj = 125°C, VR 0 V
27×10
370×10 min typ max 1.9 1.4 0.52
3
Parameter On-state voltage Threshold voltage Slope resistance
Symbol Conditions VF V(T0) rT IF = 1000 A, Tj = 125°C Tj = 125°C IT = 600...4000 A
Turn-on
Characteristic values
Parameter Peak forward recovery voltage
Symbol Conditions Vfr di/dt = 500 A/µs, Tj = 125°C
min
typ
max 17
Un i t V
Turn-off
Characteristic values
Parameter Reverse recovery current Reverse recovery charge Turn-off energy
Symbol Conditions I RM; Q rr Err di/dt = 250 A/µs, Tj = 125 °C, IF = 1000 A, VRM = 2500 V, RS = 5 , CS = 0.10 µF
min
typ
max 400 1150 --
Un i t A µC J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1112-03 Jan. 03 page 2 of 5
5SDF 05D2501
Thermal
Maximum rated values
1)
Parameter Operating junction temperature range
Characteristic values
Symbol Conditions Tvj
min -40 -40 min
typ
max 125 125
Un i t °C °C Un i t K/kW K/kW K/kW K/kW K/kW
Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled
typ
max 40 80 80 8 16
Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h)
Analytical function for transient thermal impedance:
ZthJC(t) = å Ri(1 - e -t/ i )
i =1
i Ri(K/kW ) i(s) 1 20.950 0.3960 2 10.570 0.0720 3 7.150 0.0090 4 1.330 0.0044 Fig. 1 Transient thermal impedance junction-tocase.
5000 25°C 125°C 4000 IF (A) 3000
20 IFSM 200 40 òi dt
2
n
400
typ
30
300 (10 A2s)
3
max
IFSM (kA)
2000
10
100
1000 Linearization with VF0 = 1.40 V and rF = 0.52 m 0 0 1 2 VF (V) 3 4
0 0.1 1 10 tp (ms) 0 100
Fig. 2 Forward current vs. forward voltage (typ. and max. values) and linear approximation of max. curve at 125°C.
Fig. 3 Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1112-03 Jan. 03 page 3 of 5
5SDF 05D2501
Fig. 4 Typical forward voltage waveform when the diode is turned on with a high di/dt.
Fig. 5 Forward recovery voltage vs. turn-on di/dt (max. values).
IR M
Fig. 6 Typical current and voltage waveforms at turnoff with conventional RC snubber circuit.
Fig. 7 Peak reverse recovery current vs. diF/dt, IF = 1000 A; Tj = Tjmax, limit values
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1112-03 Jan. 03 page 4 of 5
5SDF 05D2501
Fig. 8 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. No. 5SYA1112-03 Jan. 03
Others parts begin by 5s
5S-1
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