|Description||256K X 9, 30 Pin Sip Module, 3-Chip Version|
|Company||Accutek Microcircuit Corporation|
|Datasheet||Download AK59256AG datasheet
AK59256AG 262,144 Word by 9 bit, CMOS Dynamic Random Access Memory
The Accutek AK59256A high density memory modules is a random access memory organized x 9 bit words. The assembly consists of two x 4 and one x 1 DRAMs in surface mount packages mounted to the front side of a printed circuit board. The module can be configured as a leadless 30 pad SIM or a leaded 30 pin SIP. This packaging approach provides a better than to 1 density increase over standard DIP packaging. The operation of the AK59256A is identical to two x 4 DRAMs plus one x 1 DRAM. For the lower eight bits data input is tied to data output and brought out separately for each x 4 device, with common RAS, CAS and WE control. The OE pins are tied to Vss which dictates the use of early-write cycles to prevent contention of D and Q. Since the Write-Enable (WE) signal must always go low before CAS in a write cycle, Read-Write and Read-Modify-Write operation is not possible. For the ninth bit, the data input (D9) and data output (Q9) pins are brought out separately and controlled by a separate PCAS for that bit. Bit nine is generally used for parity.FEATURES
x 9 bit organization Optional 30 Pad SIM (Single In-Line Module) or 30 Pin leaded SIP (Single In-Line Package) JEDEC standard pinout Common CAS, RAS and WE control for the lower eight bits Separate PCAS control for D9 and Q9
Power: 1.26 Watt Max Active (70 nSEC) 1.10 Watt Max Active (80 nSEC).935 Wat Max Active (100 nSEC) 22 mWatt Standby (Max)
Operating free air temperature: to 70oC Upward compatible with AK591024, AK594096 and AK5916384 Functionally and Pin compatible with AK49256 Available with access times of 60 nSEC to 100 nSEC
- A9 CAS, PCAS RAS WE Vcc Vss NC Data In / Data Out Data In Data Out Address Inputs Column Address Strobe Row Address Strobe Write Enable 5v Supply Ground No ConnectORDERING INFORMATION PART NUMBER CODING INTERPRETATION
Product AK = Accutek Memory Type 4 = Dynamic RAM 5 = CMOS Dynamic RAM 6 = Static RAM Organization/Word Width by 9 Size/Bits Depth = 4 MEG = 8 MEG = 1 MEG = 16 MEG Package Type G = Single In-Line Package (SIP) S = Single In-Line Module (SIM) D = Dual In-Line Package (DIP) W =.050 inch Pitch Edge Connect Z = Zig-Zag In-Line Package (ZIP) Special Designation P = Page Mode N = Nibble Mode K = Static Column Mode W = Write Per Bit Mode V = Video Ram Separator - = Commercial M = Military Equivalent Screened I = Industrial Temperature Tested X = Burned In Speed (first two significant digits) DRAMS SRAMS 15 nS
The numbers and coding on this page do not include all variations available but are show as examples of the most widely used variations. Contact Accutek if other information is required.
9, 60 nSEC, DRAM, SIP Configuration, 30 Pin, Page Mode 9, 70 nSEC, DRAM, SIM Configuration, 30 Pin, Page Mode ACCUTEK MICROCIRCUIT CORPORATION BUSINESS CENTER at NEWBURYPORT 2 NEW PASTURE ROAD, SUITE 1 NEWBURYPORT, MA 01950-4054 VOICE: 978-465-6200 FAX: 978-462-3396 Email: firstname.lastname@example.org Internet: www.accutekmicro.com
Accutek Reserves the right to make changes in specifications at any time and without notice. Accutek does not assume any responsibility for the use of any circuitry described; no circuit patent licenses are implied. Preliminary data sheets contain minimum and maximum limits based upon design objectives, which are subject to change upon full characterization over the specific operating conditions.
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