Details, datasheet, quote on part number: AK594096BG
PartAK594096BG
Category
Description4 Meg X 9, 30 Pin Sip Module, 3-Chip Version
CompanyAccutek Microcircuit Corporation
DatasheetDownload AK594096BG datasheet
  

 

Features, Applications
DESCRIPTION
AK594096BG 4,194,304 Word by 9 Bit CMOS Dynamic Random Access Memory

The Accutek AK594096 high density memory module is a CMOS random access memory organized in 4 Meg x 9 bit words. The assembly consists of two 4 Meg x 4 and one 4 Meg x 1 DRAMs, mounted on the front side of a printed circuit board in 30 pad SIM ( l eadl co JEDEC-standard pinouts. Designed especially for low-height applications such as VMEbus boards, this low profile module is 0.550 inch high. The operation is identical to nine 4 Meg x 1 DRAMs. For the lower eight bits, data input is tied to data output and brought out separately for each bit, with common RAS and CAS control. This common I/O feature dictates the use of early-write cycles to prevent contention of data In and data out. Since the Write-Enable (WE)i signal must always go low before CAS in a write cycle, Read-Write and Read-Modify-Write operation is not possible. For the ninth bit, data in (D9) and data out (Q9) pins are brought our separately and controlled by a separate PCAS for that bit

FEATURES

x 9 bit organization Low Profile 30 pad (SIM) Single In-Line Memory Low Profile 30 pin (SIP) Single In-Line package JEDEC standard pinout Common CAS, RAS and WE for the lower eight bits CAS-before-RAS refresh Refresh cycle 2048 cycles in 32 mSEC

Power 1.450 Watt Max Active, 70 nSEC 1.610 Watt Max Active, 60 nSEC 16.5 mWatt Max Standy

Operating free air temperature to 700C Downward compatible with AK591024 and AK59256 Upward compatible with AK5916384 Fast Page Mode and Static Column Mode versions available, nibble mode is not possible

A10 RAS0 CAS D9 Q9 Vcc Vss NC Address Inputs Row Address Strobe Column Address Strobe Write Enable Output Enable Data In/Data Out Data In Data Out 5v Supply Ground No Connect

AK594096BGP-70 Meg x 9, CMOS Dynamic RAM, Leaded SIP, Page Mode, Commercial, 70 nSEC Access Time AK594096BSP-60 4 Meg x 9, CMOS Dynamic RAM, Leadless SIM, Page Mode, Commercial, 60 nSEC Access Time

G = Single In-Line Package (SIP) S = Single In-Line Module (SIM) D = Dual In-Line Package (DIP) W =.050 inch Pitch Edge Connect Z = Zig-Zag In-Line Package (ZIP) Special Designation P = Page Mode N = Nibble Mode K = Static Column Mode W = Write Per Bit Mode V = Video Ram Separator - = Commercial M = Military Equivalent Screened I = Industrial Temperature Tested X = Burned In Speed (first two significant digits) DRAMS SRAMS 15 nS

The numbers and coding on this page do not include all variations available but are show as examples of the most widely used variations. Contact Accutek if other information is required.

ACCUTEK MICROCIRCUIT CORPORATION BUSINESS CENTER at NEWBURYPORT 2 NEW PASTURE ROAD, SUITE 1 NEWBURYPORT, MA 01950-4054 VOICE: 978-465-6200 FAX: 978-462-3396 Email: accutek@seacoast.com Internet: www.accutekmicro.com

Accutek Reserves the right to make changes in specifications at any time and without notice. Accutek does not assume any responsibility for the use of any circuitry described; no circuit patent licenses are implied. Preliminary data sheets contain minimum and maximum limits based upon design objectives, which are subject to change upon full characterization over the specific operating conditions.


 

Related products with the same datasheet
AK594096BGP-70
AK594096BS
AK594096BSP-60
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