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Details, datasheet, quote on part number:ALD1107
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| Part: | ALD1107 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | Quad P-channel Matched MOSFET Array |
| Company: | Advanced Linear Devices |
| Datasheet: | Download ALD1107 datasheet File size : 63 kB |
| Request For quote: | Find where to buy ALD1107
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Datasheet text preview:
ADVANCED LINEAR DEVICES, INC.
ALD1107/ALD1117
QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY
GENERAL DESCRIPTION The ALD1107/ALD1117 are monolithic quad/dual P-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1107/ALD1117 offer high input impedance and negative current temperature coefficient. The transistor pairs are matched for minimum offset voltage and differential thermal response, and they are designed for precision analog switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC operating environment. The ALD1107/ALD1117 are builiding blocks for differential amplifier input stages, transmission gates, multiplexer applications, current sources, current mirrors and other precision analog circuits. FEATURES · · · · · · · · · Low threshold voltage of -0.7 Low input capacitance Low VOS 2mV typical High input impedance -- 1014 typical Low input and output leakage currents Negative current (IDS) temperature coefficient Enhancement-mode (normally off) DC current gain 10 9 Low input and output leakage currents
APPLICATIONS · · · · · · · · Precision current sources Precision current mirrors Voltage Choppers Differential amplifier input stage Voltage comparator Data converters Sample and Hold Precision analog signal processing
PIN CONFIGURATION
ALD1117 DP1 GP1 SP1 V1 2 3 4 DA, PA, SA PACKAGE
ALD1107 DP1 GP1 SP1 V1 2 3 4 5 6 7 DB, PB, SB PACKAGE 14 13 12 11 10 9 8 DP2 GP2 SP2 V+ DP3 GP3 SP3 1
1 8 7 6 5 DP2 GP2 SP2 V+
ORDERING INFORMATION
-55°C to +125°C 8-Pin CERDIP Package ALD1117 DA 14-Pin CERDIP Package ALD1107 DB Operating Temperature Range* 0 °C to +70°C 0°C to +70°C 8-Pin Plastic Dip Package ALD1117PA 14-Pin Plastic Dip Package ALD1107 PB 8-Pin SOIC Package ALD1117 SA 14-Pin SOIC Package ALD1107 SB
DP4 GP4 SP4
* Contact factory for industrial temperature range.
BLOCK DIAGRAM
ALD1107
V- (4) DP1 (1) DP2 (14)
BLOCK DIAGRAM
ALD1117
V - (4)
DP3 (10) DP4 (5)
~
GP3 (9)
DP1 (1)
~
DP2 (8)
GP1 (2)
GP2 (13)
GP4 (6)
GP1 (2)
GP2 (7)
SP1 (3)
V+ (11)
SP2 (12)
SP3 (8)
V+ (11)
SP4 (7)
SP1 (3)
V+ (5)
SP2 (6)
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS Gate-source voltage, VGS Power dissipation Operating temperature range Storage temperature range Lead temperature, 10 seconds -13.2V -13.2V 500 mW 0°C to +70°C -55°C to +125°C -65°C to +150°C +260°C
PA, SA, PB, SB package DA, DB package
OPERATING ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified
ALD1107 Parameter Gate Threshold Voltage Offset Voltage VGS1-VGS2 Gate Threshold Temperature Drift 2 On Drain Current
Transconductance
ALD1117 Max -1.0 Min -0.4 Typ -0.7 Max -1.0 Unit V
Test Conditions I DS = -1.0µA VGS = VDS
Symbol VT
Min -0.4
Typ -0.7
VOS
2
10
2
10
mV
IDS = -10µA VGS = VDS
TCVT
-1.3
-1.3
mV/°C
IDS (ON)
-1.3
-2
-1.3
-2
mA
VGS = VDS = -5V
GIS Gfs GOS
0.25
0.67 0.5 40
0.25
0.67 0.5 40
mmho VDS = -5V IDS = -10mA % µ mho VDS = -5V IDS = -10mA
Mismatch Output Conductance Drain Source On Resistance Drain Source On Resistance Mismatch Drain Source Breakdown Voltage Off Drain Current 1 Gate Leakage Current Input Capacitanc e 2 Notes:
1 2
R DS (ON)
1200
1800
1200
1800
VDS = -0.1V VGS = -5V
RDS (ON)
0.5
0.5
%
VDS = -0.1V VGS = -5V
BVDSS
-12
-12
V
IDS = -1.0µA VGS = 0V
IDS (OFF)
10
400 4 10 1 3
10
400 4 10 1 3
pA nA pA nA pF
VDS = -12V VGS = 0V TA = 125°C VDS = 0V VGS = -12V TA = 125°C
IGSS C ISS
0.1
0.1
1
1
Consists of junction leakage currents Sample tested parameters
ALD1107/ALD1117
Advanced Linear Devices
2
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
500
DRAIN SOURCE CURRENT ( mA)
VBS = 0V TA = 25°C VGS = -12V -10V -8V -6V -2.5 -4V -2V 0 0 -2 -4 -6 -8 -10 -12
LOW VOLTAGE OUTPUT CHARACTERISTICS
DRAIN SOURCE CURRENT (µA)
-10 -7.5
250
VBS = 0V TA = 25°C
VGS = -12V -6V -4V -2V
0
-5.0
-250
500 -320 -160 0 160 320
DRAIN SOURCE VOLTAGE (V)
DRAIN SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE
FORWARD TRANSCONDUCTANCE (mmho) 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0 -2 -4 -6 -8 -10 -12 TA = +25°C IDS = -1mA TA = +125°C
-20
TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS
DRAIN SOURCE CURRENT (µA)
VBS = 0V -15 2V 4V 6V 8V 10V 12V
VBS = 0V f = 1KHz
IDS = -5mA
-10
-5 VGS = VDS TA = 25°C 0 0 -0.8 -1.6 -2.4 -3.2 -4.0
DRAIN SOURCE VOLTAGE (V)
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE RDS (ON) vs. GATE SOURCE VOLTAGE
DRAIN SOURCE ON RESISTANCE (K)
100 VDS = 0.4V VBS = 0V 10 TA = +125°C
OFF DRAIN CURRENT vs. AMBIENT TEMPERATURE
OFF DRAIN SOURCE CURRENT (pA)
1000 VDS = -12V VGS = VBS = 0V 100
1 TA = +25°C 0.1 0 -2 -4 -6 -8 -10 -12
10
1 -50 -25 0 +25 +50 +75 +100 +125
GATE SOURCE VOLTAGE (V)
AMBIENT TEMPERATURE (°C)
ALD1107/ALD1117
Advanced Linear Devices
3
TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
V+ = +5V 1/2 ALD1107 or ALD1117 V+ = +5V Q3 Q4
CURRENT SOURCE WITH GATE CONTROL
1/2 ALD1107 or ALD1117 V+ = +5V
Q3
Q4
ISET
RSET I SOURCE
ISET Digital Logic Control of Current Source ON Q1 1/4 ALD1106 or 1/2 ALD1116 RSET ISOURCE
Q1 1/2 ALD1106 or ALD1116 Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET
Q2
I SOURCE = ISET = V+ -Vt RSET ~ = 4 RSET
OFF Q1 : N - Channel MOSFET Q3,Q4 : P - Channel MOSFET
DIFFERENTIAL AMPLIFIER
V+ 1/2 ALD1107 or ALD1117
CURRENT SOURCE MULTIPLICATION
V+ = +5V
PMOS PAIR Q3 Q4 VOUT VIN+ Q1 Q2 NMOS PAIR
ISET
RSET ISOURCE = ISET x N
QSET
Q1
Q2
Q3
QN
VIN-
1/2 ALD1106 or ALD1116
Current Source
Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET
QSET, Q1..QN: ALD1106 or ALD1116 N - Channel MOSFET
ALD1107/ALD1117
Advanced Linear Devices
4
TYPICAL APPLICATIONS
BASIC CURRENT SOURCES N- CHANNEL CURRENT SOURCE
V+ = +5V ISET ISOURCE RSET
P- CHANNEL CURRENT SOURCE
V+ = +5V 1/2 ALD1107 or ALD1117 8 7 6 3 2 5 I SOURCE ISET RSET Q4
Q2 8
5 6 2 7
3 Q1 1 1/2 ALD1106 or ALD1116
Q3
ISOURCE = ISET =
V+ - Vt RSET
~ V+ - 1.0 = ~ = RSET
4 RSET
Q1, Q2 : N - Channel MOSFET
Q3, Q4: P - Channel MOSFET
CASCODE CURRENT SOURCES
V+ = +5V
V+ = +5V ALD1107
ISET ISOURCE Q4
RSET
Q1 Q2
Q3
Q3 Q4
Q2
Q1
ISET RSET ISOURCE
ALD1106
V+ - 2Vt RSET 3 RSET
ISOURCE = ISET =
~ =
Q1, Q2, Q3, Q4: N - Channel MOSFET (ALD1101 or ALD1103)
Q1, Q2, Q3, Q4: P - Channel MOSFET (ALD1102 or ALD1103)
ALD1107/ALD1117
Advanced Linear Devices
5
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