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Part: AM29DL162DT120
Category:
Memory
-> Flash
-> 16 Mb
Description: 16 Megabit (2 M X 8-Bit/1 M X 16-Bit) Boot Sector
Company: Advanced Micro Devices, Inc.
Datasheet: Download AM29DL162DT120 datasheet File size : 233 kB
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Datasheet text preview:
Am29DL16xD
Data Sheet
July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Ple ase contact your local AMD or Fujitsu sales office for additional information about Spansion memory solutions.
Publication Number 21533 Revision E
Amendment +3 Issue Date February 25, 2004
THIS PAGE LEFT INTENTIONALLY BLANK.
Am29DL16xD
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES Simultaneous Read/Write operations -- Data can be continuously read from one bank while executing erase/program functions in other bank -- Zero latency between read and write operations Multiple bank architectures -- Four devices available with different bank sizes (refer to Table 2) SecSiTM (Secured Silicon) Sector -- Current version of device has 64 Kbytes; future versions will have 256 bytes -- Factor y locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function. ExpressFlash option allows entire sector to be available for factory-secured data -- Customer lockable: Can be read, programmed, or erased just like other sectors. Once locked, data cannot be changed Zero Power Operation -- Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero Package options -- 48-ball Very Thin Profile Fine-pitch BGA -- 48-ball Fine-pitch BGA -- 64-ball Fortified BGA -- 48-pin TSOP Top or bottom boot block Manufactured on 0.23 µm process technology -- Compatible with Am29DL16xC devices Compatible with JEDEC standards -- Pinout and software compatible with single-power-supply flash standard PERFORMANCE CHARACTERISTICS High performance -- Access time as fast 70 ns -- Program time: 7 µs/word typical utilizing Accelerate function Ultra low power consumption (typical values) -- 2 mA active read current at 1 MHz -- 10 mA active read current at 5 MHz -- 200 nA in standby or automatic sleep mode Minimum 1 million write cycles guaranteed per sector 20 Year data retention at 125°C -- Reliable operation for the life of the system SOFTWARE FEATURES Data Management Software (DMS) -- AMD-supplied software manages data programming and erasing, enabling EEPROM emulation -- Eases sector erase limitations Supports Common Flash Memory Interface (CFI) Erase Suspend/Erase Resume -- Suspends erase operations to allow programming in same bank Data# Polling and Toggle Bits -- Provides a software method of detecting the status of program or erase cycles Unlock Bypass Program command -- Reduces overall programming time when issuing multiple program command sequences HARDWARE FEATURES Any combination of sectors can be erased Ready/Busy# output (RY/BY#) -- Hardware method for detecting program or erase cycle completion Hardware reset pin (RESET#) -- Hardware method of resetting the internal state machine to reading array data WP#/ACC input pin -- Write protect (WP#) function allows protection of two outermost boot sectors, regardless of sector protect status -- Acceleration (ACC) function accelerates program timing Sector protection -- Hardware method of locking a sector, either in-system or using programming equipment, to prevent any program or erase operation within that sector -- Temporar y Sector Unprotect allows changing data in protected sectors in-system
This Data Sheet states AMD's current technical specifications regarding the Products described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21533 Rev: E Amendment/+3 Issue Date: February 25, 2004
Refer to AMD's Website (www.amd.com) for the latest information.
GENERAL DESCRIPTION
Th e Am29DL16xD family consists of 16 megabit, 3.0 volt-only flash memory devices, organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. Word mode data appears on DQ0DQ15; byte mode d a t a appears on DQ0DQ7. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers. The device is available with an access time of 70, 90, o r 120 ns. The devices are offered in 48-pin TSOP, 4 8 - b a l l Fine-pitch BGA, 48-ball Very Thin Profile Fine-pitch BGA, and 64-ball Fortified BGA packages. S ta nd ar d control pins--chip enable (CE#), write enable (WE#), and output enable (OE#)--control normal read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supp l y for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. both. Customer Lockable parts may utilize the SecSi S ecto r as bonus space, reading and writing like any other flash sector, or may permanently lock their own code there. DMS (Data Management Software) allows systems to easily take advantage of the advanced architecture of the simultaneous read/write product line by allowing removal of EEPROM devices. DMS will also allow the system software to be simplified, as it will perform all functions necessary to modify data in file structures, a s opposed to single-byte modifications. To write or update a particular piece of data (a phone number or configuration data, for example), the user only needs t o state which piece of data is to be updated, and where the updated data is located in the system. This i s a n a d va n t a g e c o m p a r e d t o s y s te m s w h e r e user-written software must keep track of the old data l o cation , status, logical to physical translation of the d a ta onto the Flash memory device (or memory device s), and more. Using DMS, user-written software does not need to interface with the Flash memory directly. Instead, the user's software accesses the Flash memory by calling one of only six functions. AMD prov i d e s this software to simplify system design and software integration efforts. The device offers complete compatibility with the J E D E C single-power-supply Flash command set s t a n d a rd . Commands are written to the command register using standard microprocessor write timings. R e a d i n g data out of the device is similar to reading from other Flash or EPROM devices. T h e host system can detect whether a program or erase operation is complete by using the device stat u s bits: RY/BY# pin, DQ7 (Data# Polling) and DQ6/DQ2 (toggle bits). After a program or erase cycle has been completed, the device automatically returns to reading array data. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. H a rdw a re data protection measures include a low V C C detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memo r y. T h i s c a n b e a c h i e v e d i n - s y s t e m o r v i a programming equipment. T h e device offers two power-saving features. When addresses have been stable for a specified amount of t im e, the device enters the automatic sleep mode. T h e system can also place the device into the s t a n d by mode. Power consumption is greatly reduced in both modes. February 25, 2004
Simultaneous Read/Write Operations with Zero Latency
Th e Simultaneous Read/Write architecture provides s i m u l t a n e o u s operation by dividing the memory space into two banks. The device can improve overall system performance by allowing a host system to prog r a m or erase in one bank, then immediately and simultaneously read from the other bank, with zero lat en cy. This releases the system from waiting for the completion of program or erase operations. The Am29DL16xD devices uses multiple bank architectures to provide flexibility for different applications. Four devices are available with these bank sizes:
Device DL161 DL162 DL163 DL164 Bank 1 0.5 Mb 2 Mb 4 Mb 8 Mb B a nk 2 15.5 Mb 14 Mb 12 Mb 8 Mb
Am29DL16xD Features
The SecSiTM (Secured Silicon) Sector is an extra sect or capable of being permanently locked by AMD or customers. The SecSi Sector Indicator Bit (DQ7) is p er ma ne ntly set to a 1 if the part is factory locked, a n d set to a 0 if customer lockable. This way, customer lockable parts can never be used to replace a factory locked part. Current version of device has 64 Kbytes; future versions will have only 256 bytes. This should be considered during system design. Fa c t o r y locked parts provide several options. The S e c S i Sector may store a secure, random 16 byte ESN (Electronic Serial Number), customer code (prog ra m m e d through AMD's ExpressFlash service), or 2
Am29DL16xD
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 6
Special Package Handling Instructions ......... 8 Sector Erase Command Sequence .... 26 Erase Suspend/Erase Resume Commands ........ 27
Figure 4. Erase Operation ........... 27
Command Definitions .......... 28
Table 14. Am29DL16xD Command Definitions ... 28
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Ordering Information . . . . . . . . . . . . . . . . . . . . . . 10 Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 11
Table 1. Am29DL16xD Device Bus Operations ...11
Write Operation Status . . . . . . . . . . . . . . . . . . . . 29
DQ7: Data# Polling .... 29
Figure 5. Data# Polling Algorithm ......... 29
Word/Byte Configuration ..... 11 Requirements for Reading Array Data ........11 Writing Commands/Command Sequences .......... 12 Accelerated Program Operation .....12 Autoselect Functions ........12 Simultaneous Read/Write Operations with Zero Latency ...12 Standby Mode ...... 12 Automatic Sleep Mode ........12 RESET#: Hardware Reset Pin .....13 Output Disable Mode ..........13
Table 2. Am29DL16xD Device Bank Divisions ....13 Table 3. Sector Addresses for Top Boot Sector Devices ....14 Table 4. SecSiTM Sector Addresses for Top Boot Devices ......... 14 Table 5. Sector Addresses for Bottom Boot Sector Devices ........15 Table 6. SecSiTM Addresses for Bottom Boot Devices ...... 15
RY/BY#: Ready/Busy# ........ 30 DQ6: Toggle Bit I ........ 30
Figure 6. Toggle Bit Algorithm ..... 30
DQ2: Toggle Bit II ....... 31 Reading Toggle Bits DQ6/DQ2 .... 31 DQ5: Exceeded Timing Limits ...... 31 DQ3: Sector Erase Timer .... 31
Table 15. Write Operation Status ......... 32
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 33
Figure 7. Maximum Negative Overshoot Waveform ..... 33 Figure 8. Maximum Positive Overshoot Waveform ..... 33
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 33 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 9. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) .... 35 Figure 10. Typical ICC1 vs. Frequency......... 35
Autoselect Mode ........ 16
Table 7. Am29DL16xD Autoselect Codes, (High Voltage Method) ......16
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 11. Test Setup ........ 36 Table 16. Test Specifications ....... 36
Sector/Sector Block Protection and Unprotection ...... 17
Table 8. Top Boot Sector/Sector Block Addresses for Protection/Unprotection ..........17 Table 9. Bottom Boot Sector/Sector Block Addresses for Protection/Unprotection ..........17
Key To Switching Waveforms ...... 36
Figure 12. Input Waveforms and Measurement Levels ...... 36
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 13. Read Operation Timings...... 37 Figure 14. Reset Timings.... 38
Write Protect (WP#) ............18 Temporary Sector/Sector Block Unprotect ..18
Figure 1. Temporary Sector Unprotect Operation ......... 18 Figure 2. In-System Sector/Sector Block Protection and Unprotection Algorithms ...... 19
Word/Byte Configuration (BYTE#) ..... 39
Figure 15. BYTE# Timings for Read Operations .......... 39 Figure 16. BYTE# Timings for Write Operations .......... 39
Erase and Program Operations ......... 40
Figure 17. Program Operation Timings ...... Figure 18. Accelerated Program Timing Diagram ........ Figure 19. Chip/Sector Erase Operation Timings ......... Figure 20. Back-to-back Read/Write Cycle Timings ..... Figure 21. Data# Polling Timings (During Embedded Algorithms) ....... Figure 22. Toggle Bit Timings (During Embedded Algorithms) ... Figure 23. DQ2 vs. DQ6 ..... 41 41 42 43 43 44 44
SecSiTM (Secured Silicon) Sector Flash Memory Region ...20 Factory Locked: SecSi Sector Programmed and Protected At the Factory .....20 Customer Lockable: SecSi Sector NOT Programmed or Protected At the Factory ..20 Hardware Data Protection ... 20 Low VCC Write Inhibit ......21 Write Pulse "Glitch" Protection ........ 21 Logical Inhibit ..........21 Power-Up Write Inhibit ..... 21
Table 10. CFI Query Identification String .... Table 11. System Interface String......... Table 12. Device Geometry Definition ........ Table 13. Primary Vendor-Specific Extended Query ....
Temporary Sector/Sector Block Unprotect .. 45
Figure 24. Temporary Sector/Sector Block Unprotect Timing Diagram 45 Figure 25. Sector/Sector Block Protect and Unprotect Timing Diagram 46
Alternate CE# Controlled Erase and Program Operations .. 47
Figure 26. Alternate CE# Controlled Write (Erase/Program) Operation Timings ........ 48
Common Flash Memory Interface (CFI) . . . . . . . 21
21 22 22 23
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 24
Reading Array Data .... 24 Reset Command ........ 24 Autoselect Command Sequence ........ 24 Enter SecSiTM Sector/Exit SecSi Sector Command Sequence ....25 Byte/Word Program Command Sequence ..25 Unlock Bypass Command Sequence ......25
Figure 3. Program Operation ....... 26
Erase And Programming Performance . . . . . . . Latchup Characteristics . . . . . . . . . . . . . . . . . . . . Package and Pin Capacitance . . . . . . . . . . . . . . . Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . .
49 49 49 49
FBC048--48-Ball Fine-Pitch Ball Grid Array 8 x 9 mm package ...... 50 LAA064--64-Ball Fortified Ball Grid Array, 13 x 11 mm package ........... 51 TS 048--48-Pin Standard TSOP ....... 52 VBF048--48-Ball Very Thin Profile Fine-Pitch Ball Grid Array .... 53
Chip Erase Command Sequence .......26
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 54
February 25, 2004
Am29DL16xD
3
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