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Part: AM29F010-90JI
Category:
Memory
-> Flash
Description: 1 Megabit ( 128 K X 8-bit ) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-die Revision 1
Company: Advanced Micro Devices, Inc.
Datasheet: Download AM29F010-90JI datasheet File size : 1483 kB
Request For quote: Find where to buy AM29F010-90JI
Datasheet text preview:
SUPPLEMENT
Am29F010 Known Good Die
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory--Die Revision 1
DISTINCTIVE CHARACTERISTICS
s Single power supply operation -- 5.0 V ± 10% for read, erase, and program operations -- Simplifies system-level power requirements s High performance -- 90 or 120 ns maximum access time s Low power consumption -- 30 mA max active read current -- 50 mA max program/erase current -- <25 µA typical standby current s Flexible sector architecture -- Eight uniform sectors -- Any combination of sectors can be erased -- Supports full chip erase s Sector protection -- Hardware-based feature that disables/reenables program and erase operations in any combination of sectors -- Sector protection/unprotection can be implemented using standard PROM programming equipment s Embedded Algorithms -- Embedded Erase algorithm automatically pre-programs and erases the chip or any combination of designated sector -- Embedded Program algorithm automatically programs and verifies data at specified address s Minimum 100,000 program/erase cycles guaranteed s Compatible with JEDEC standards -- Pinout and software compatible with single-power-supply flash -- Superior inadvertent write protection s Data Polling and Toggle Bits -- Provides a software method of detecting program or erase cycle completion s Tested to datasheet specifications at temperature s Quality and reliability levels equivalent to standard packaged components
1/13/98
Publication# 21116 Rev: B Amendment/0 Is sue Date: January 1998
SUPPLEMENT
GENERAL DESCRIPTION
The Am29F010 in Known Good Die (KGD) form is a 1 Mbit, 5.0 Volt-only Flash memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form. Am29F010 Features The Am29F010 device is organized as eight uniform sectors of 16 Kbytes each for flexible erase capability. This device is designed to be programmed in-system with the standard system 5.0 Volt V CC supply. A power s u p p l y providing 12.0 Volt V P P is not required for program or erase operations. The Am29F010 in KGD form offers access times of 90 ns and 120 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE) controls. The device requires only a single 5.0 volt power supply for both read and write functions. Internally genera t e d and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of th e device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program c om m an d sequence. This invokes the Embedded
Pr ogram algorithm--an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Device erasure occurs by executing the erase command sequence. This invokes the Embedded Erase algorithm--an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. T h e host system can detect whether a program or erase operation is complete by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is erased when shipped from the factory. The hardware data protection measures include a low VCC detector automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory, and is implemented using standard EPROM programmers. The system can place the device into the standby mode. Power consumption is greatly reduced in this mode.
ELECTRICAL SPECIFICATIONS
Refer to the Am29F010 data sheet, publication number 1 6 7 3 6 , for full electri c a l specifications for the Am29F010 in KGD form.
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SUPPLEMENT
PRODUCT SELECTOR GUIDE
Family Part Number Speed Option (VCC = 5.0 V ± 10%) Max Access Time, tACC (ns) Max CE# Access, tCE (ns) Max OE# Access, tOE (ns) -90 90 90 35 Am29F010 KGD -120 120 120 50
DIE PHOTOGRAPH
Orientation relative to top left corner of Gel-Pak
Orientation relative to leading edge of tape and reel
DIE PAD LOCATIONS
76 543 2 1 30 29 28 27 26
8
25
AMD logo location
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
24
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SUPPLEMENT
PAD DESCRIPTION
Pad Center (mils) Pad 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Signal X VCC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 VSS D3 D4 D5 D6 D7 CE# A10 OE# A11 A9 A8 A13 A14 WE# 0.00 33.20 41.60 49.90 58.30 66.60 75.00 74.40 75.60 69.40 56.10 46.10 36.30 25.90 13.30 4.30 4.70 17.30 27.60 40.20 50.60 60.60 74.00 81.40 80.20 80.80 72.40 64.10 55.70 47.40 Y 0.00 1.30 1.30 1.30 1.30 1.30 1.30 10.50 158.20 166.80 166.80 166.80 166.90 166.90 166.90 166.90 166.90 166.90 166.90 166.90 166.90 166.80 166.80 158.20 10.40 1.30 1.30 1.30 1.30 1.30 X 0.00 0.84 1.06 1.27 1.48 1.69 1.91 1.89 1.92 1.76 1.42 1.17 0.92 0.66 0.34 0.11 0.12 0.44 0.70 1.02 1.29 1.54 1.88 2.07 2.04 2.05 1.84 1.63 1.41 1.20 Y 0.00 0.03 0.03 0.03 0.03 0.03 0.03 0.27 4.02 4.24 4.24 4.24 4.24 4.24 4.24 4.24 4.24 4.24 4.24 4.24 4.24 4.24 4.24 4.02 0.26 0.03 0.03 0.03 0.03 0.03 Pad Center (millimeters)
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
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SUPPLEMENT
ORDERING INFORMATION Standard Products
AMD KGD products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29F010 -90 DP C 1 DIE REVISION This number refers to the specific AMD manufacturing process and product technology reflected in this document. It is entered in the revision field of AMD standard product nomenclature. TEMPERATURE RANGE C = Commercial (0°C to +70°C) I = Industrial (40°C to +85°C) E = Extended (55°C to +125°C) PACKAGE TYPE AND MINIMUM ORDER QUANTITY DP = Waffle Pack 245 die per 5 tray stack DG = DT = DW = Gel-Pak® Die Tray 486 die per 6 tray stack SurftapeTM (Tape and Reel) 2500 per 7-inch reel Gel-Pak® Wafer Tray (sawn wafer on frame) Call AMD sales office for minimum order quantity
SPEED OPTION See Valid Combinations
DEVICE NUMBER/DESCRIPTION Am29F010 Known Good Die 1 Megabit (128 K x 8-Bit) CMOS Flash Memory--Die Revision 1 5.0 Volt-only Program and Erase
Valid Combinations Am29F010-90 Am29F010-120 DPC 1, DPI 1, DPE 1, DGC 1, DGI 1, DGE 1, DTC 1, DTI 1, DTE 1, DWC 1, DWI 1, DWE 1
Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations.
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