Details, datasheet, quote on part number: APT20M11JVR
PartAPT20M11JVR
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
Description
CompanyAdvanced Power Technology
DatasheetDownload APT20M11JVR datasheet
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Features, Applications

Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current = 25C Pulsed Drain Current

Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current

Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS 250A) On State Drain Current

Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, = 5.0mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Avenue J.F. Kennedy Bt B4 Parc Cadra Nord

Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

Test Conditions VGS = 0V VDS = 1 MHz VGS = 0.5 ID[Cont.] @ 25C VGS ID = ID[Cont.] = 0.6 VDD = 0.5 VDSS VDD = 0.5 VDSS MIN TYP MAX UNIT

Gate-Source Charge Gate-Drain ("Miller Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Symbol IS ISM VSD Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage

Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/ s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/ s)

Symbol RJC RJA VIsolation Torque Characteristic Junction to Case Junction to Ambient RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Maximum Torque for Device Mounting Screws and Electrical Terminations. MIN TYP MAX UNIT C/W Volts

1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

360 ID, DRAIN CURRENT (AMPERES) 360 6.5V ID, DRAIN CURRENT (AMPERES) 7V 6.5V

4V VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 360 ID, DRAIN CURRENT (AMPERES) = -55C RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE = +125C

VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST <0.5 % DUTY CYCLE
4V VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.15

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 200 ID, DRAIN CURRENT (AMPERES)

ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT

TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5

TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

 

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