Details, datasheet, quote on part number: APT20M13PVR
PartAPT20M13PVR
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs
Description
CompanyAdvanced Power Technology
DatasheetDownload APT20M13PVR datasheet
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Features, Applications

Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

100% Avalanche Tested New High Power P-Pack Package
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
Continuous Drain Current = 25C Pulsed Drain Current

Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation = 25C Linear Derating Factor

Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current

Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions TYP MAX UNIT Volts Amps

Drain-Source Breakdown Voltage (VGS 250A) On State Drain Current

Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, = 5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Avenue J.F. Kennedy Bt B4 Parc Cadra Nord

Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

Test Conditions VGS = 0V VDS = 1 MHz VGS ID = ID[Cont.] @ 25C VGS ID = ID[Cont.] = 0.6 VDD = 0.5 VDSS VDD = 0.5 VDSS MIN TYP MAX UNIT

Gate-Source Charge Gate-Drain ("Miller Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Symbol IS ISM VSD Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage

1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.


 

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