Details, datasheet, quote on part number: APT20M18B2VFR
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
CompanyAdvanced Power Technology
DatasheetDownload APT20M18B2VFR datasheet
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Features, Applications

Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

Identical Specifications: T-MAXTM or TO-264 Package Lower Leakage Fast Recovery Body Diode
Continuous Drain Current = 25C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation = 25C Linear Derating Factor

Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current

Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS 250A) On State Drain Current

Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

Gate-Source Charge Turn-on Delay Time Rise Time
Characteristic / Test Conditions Pulsed Source Current
Continuous Source Current (Body Diode) (Body Diode)
Diode Forward Voltage Peak Diode Recovery

Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s)

Symbol RqJC RqJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W

4 Starting = 25W, Peak = 100A The maximum current is limited by lead temperature. [Cont.], di/ 2.0W dt

1 Repetitive Rating: Pulse width limited by maximum j 2 Pulse Test: Pulse width < 380 S, Duty Cycle 2% 3 See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

These dimensions are equal to the TO-247 without the mounting hole.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583


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