Details, datasheet, quote on part number: APT20M34BLL
PartAPT20M34BLL
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
Description
CompanyAdvanced Power Technology
DatasheetDownload APT20M34BLL datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg

Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current = 25C Pulsed Drain Current

Increased Power Dissipation Easier To Drive TO-247 or Surface Mount D3PAK Package

Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current

Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS 250A) On State Drain Current

Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, = 1mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage

Reverse Recovery Time (IS dl S /dt = 100A/s) Reverse Recovery Charge (IS -74A, dl S/dt = 100A/s) Peak Diode Recovery

Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W

1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle 2% 3 See MIL-STD-750 Method 3471

4 Starting = 25, Peak 74A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -74A di/dt 700A/s VR VDSS TJ 150C

APT Reserves the right to change, without notice, the specifications and information contained herein.

SINGLE PULSE RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

RC MODEL Junction temp. ( "C) 0.131 Power (Watts) 0.180 Case temperature 0.161F 0.00789F
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST <0.5 % DUTY CYCLE
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4
0.9 VGS=20V ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE

 

Some Part number from the same manufacture Advanced Power Technology
APT20M34SFLL
APT20M34SLL
APT20M36BFLL
APT20M36BLL
APT20M36SFLL
APT20M36SLL
APT20M38BVFR
APT20M38BVR
APT20M38SVR
APT20M40BVR
APT20M42HVR 200, 0.042,  , 50, TO-258 H ,
APT20M45BVFR
APT20M45BVR
APT20M45SVFR
APT20M45SVR
APT20N60BC3 600, 0.190,  , 20.7, TO-247 B ,
APT20N60CC3 COOLMOS(R) Power MOSFET<<<>>>-- Lowest Area Specific RDS (on) For Low Conduction Loses,<<<>>> Smaller Package/less Heat Sink<<<>>><<<>>> -- Low Gate Charge For Lower Driving Requirements<<<>>><<<>>> -- Low Internal
APT20N60SC3 600, 0.190,  , 20.7, D3 S ,
APT20SC120J Silicon Carbide (SiC) Schottky Diode
APT25GP120BDF1 1200,  , 3.90, 36, TO-247 B ,
APT26GU30 Igbt, Power MOS 7, 300V, 26A, 11NS

APTM100UM65S-ALN : Single Switch + Diodes

2931-150 : 150 Watts, 38 Volts, 50us, 4% Radar 2900-3100 MHz

APT10043 : Power MOS 7TM is a new Generation of low Loss, high Voltage, N-channel Enhancement mode Power Mosfets

APT20N60BCFG : Super Junction Fredfet

APTGT150DH120 : 3 Phase Bridge Trench + Field Stop IGBT Power Module

APTGT150DH170 : 3 Phase Bridge Trench + Field Stop IGBT Power Module

MS2322 : RF & Microwave Transistors Avionics Applications

APT50GP60JDQ2 : Power MOS 7 IGBT

MSC4000 : RF AND Microwave Transistors General Purpose Amplifier Applications

Same catergory

2MBI150NC-060 : Igbt Module (N Series). High speed switching Voltage drive Low inductance module structure Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Industrial machines, such as Welding machines Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current.

EU2 : . ) is with Half-cycle Sinewave Heatsink Single Shot (=I F) 90% Recovery Point (ex. =100mA/100mA 90% Recovery Point) F) 75% Recovery Point (ex. =100mA/200mA 75% Recovery Point) .

MBR0540 : . Case: SOD-123 plastic case Polarity: Band denotes cathode end Weight: 0.01g Marking Code: B4 Packaging Codes/Options: D3/10K per 13" reel (8mm tape), 30k/box D4/3K per 7" reel (8mm tape), 30k/box For surface mounted applications Low profile package Ideal for automated placement Low power loss, high efficiency High temperature soldering: 250C/10 seconds.

SKB06N60HS : 1200V HighSpeed2 Igbt And 600V Highspeed Igbt With Antiparallel Fast Recovery EmCon™ Diode in Only One Package..

UF2820R : 100-500 Mhz, 20 W, 28 V, RF MOSFET Power Transistor. N-Channel Enhancement DMOS Structure Lower Capacitances for Broadband Operation Devices High Saturated Output Power Lower Noise Figure Than Competitive. Mode Device Parameter Drain-SourceVoltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature StorageTemperature Thermal Resistance 1 Symbol 1 VOS VGS IOS Input Capacitance.

UGF8CT : Ultrafast Efficient Plastic Rectifier. Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Ideally suited for use in very high frequency switching power supplies, inverters and as a free wheeling diode Ultrafast reverse recovery time for high efficiency Soft recovery characteristics Excellent high temperature switching Glass passivated chip junction High temperature.

VP0808M : Transistor MOSFET. High-Side Switching Low On-Resistance: 2.5 W Moderate Threshold: 3.4 V Fast Switching Speed: 40 ns Low Input Capacitance: 75 pF Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer Applications D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery.

DCP69A : Medium Power Bipolar Transistors. Epitaxial Planar Die Construction Complementary NPN Type Available (DCP68) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Case: SOT-223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification.

A7017LYF-100K=R : 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, WIRE ; Application: General Purpose, DC-DC CONVERTER ; Inductance Range: 10 microH ; Inductance Tolerance: 10 (+/- %) ; DCR: 0.0450 ohms ; SRF: 14 MHz ; Testing Frequency: 1 kHz.

C20T06QTRLH : 20 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB. s: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 20000 mA ; Pin Count: 2 ; Number of Diodes: 2.

CR6CM-12B-A8B00 : 9.4 A, 600 V, SCR, TO-220AB. s: VDRM: 600 volts ; VRRM: 600 volts ; IT(RMS): 9.4 amps ; IGT: 10 mA ; Standards and Certifications: RoHS ; Package Type: TO-220, SC-46, TO-220, 3 PIN ; Pin Count: 3.

DSC7501 : 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, MINIP3-F2-B, 3 PIN.

P1104UAL : 20 A, SILICON SURGE PROTECTOR. s: Thyristor Type: Thyristor Surge Suppressor, SILICON SURGE PROTECTOR ; Package Type: ROHS COMPLIANT, MODIFIED MS-013, SOIC-6 ; Pin Count: 6 ; Standards and Certifications: RoHS.

RLB1314-100M-T/R : 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: Radial, PRINTED WIRING PIN ; Application: General Purpose, High Current ; Inductance Range: 10 microH ; Rated DC Current: 3200 milliamps ; Operating Temperature: -20 to 80 C (-4 to 176 F).

RN2107FV : 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: 2-1L1A, VESM, 3 PIN.

16CE15LX : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 15 uF, SURFACE MOUNT. s: : Polarized ; Capacitance Range: 15 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 16 volts ; Leakage Current: 3 microamps ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 105 C (-67 to 221 F).

2SD2537T100 : 1200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: MPT3, SC-62, 3 PIN.

33985 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 25 V, 820 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; : Polarized ; Capacitance Range: 820 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 25 volts ; Leakage Current: 615 microamps ; Mounting Style: Through Hole ; Operating Temperature: -55 to 105 C (-67 to 221 F).

 
0-C     D-L     M-R     S-Z