Details, datasheet, quote on part number: APT20M36SLL
PartAPT20M36SLL
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
Description
CompanyAdvanced Power Technology
DatasheetDownload APT20M36SLL datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg

Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current = 25C Pulsed Drain Current

Increased Power Dissipation Easier To Drive TO-247 or Surface Mount D3PAK Package

Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current

Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS 250A) On State Drain Current

Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, = 1mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Symbol Ciss Coss Crss Q gd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

Test Conditions VGS = 0V VDS = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] = 1.6 MIN TYP MAX UNIT

Gate-Source Charge Gate-Drain ("Miller Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage

Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) Peak Diode Recovery dv/dt

Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
1 Repetitive Rating: Pulse width limited by maximum junction

3 See MIL-STD-750 Method 3471 4 Starting = 25, Peak = 65A temperature. Pulse Test: Pulse width < 380 s, Duty Cycle 2% 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS [ ] APT Reserves the right to change, without notice, the specifications and information contained herein.

RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST <0.5 % DUTY CYCLE
= -55C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
VGS=20V ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)

TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

 

Some Part number from the same manufacture Advanced Power Technology
APT20M38BVFR
APT20M38BVR
APT20M38SVR
APT20M40BVR
APT20M42HVR 200, 0.042,  , 50, TO-258 H ,
APT20M45BVFR
APT20M45BVR
APT20M45SVFR
APT20M45SVR
APT20N60BC3 600, 0.190,  , 20.7, TO-247 B ,
APT20N60CC3 COOLMOS(R) Power MOSFET<<<>>>-- Lowest Area Specific RDS (on) For Low Conduction Loses,<<<>>> Smaller Package/less Heat Sink<<<>>><<<>>> -- Low Gate Charge For Lower Driving Requirements<<<>>><<<>>> -- Low Internal
APT20N60SC3 600, 0.190,  , 20.7, D3 S ,
APT20SC120J Silicon Carbide (SiC) Schottky Diode
APT25GP120BDF1 1200,  , 3.90, 36, TO-247 B ,
APT26GU30 Igbt, Power MOS 7, 300V, 26A, 11NS
APT26GU30B
APT26GU30K Low Cost 300V Discrete Igbt Product Line Replaces 200-300V MOSFETs
APT26UG30K Igbt, Power MOS 7, 300V, 26A, 11NS
APT2X100D100J 1000V, 100A Ultrafast Soft Recovery Dual Rectifier Diode
APT2X100D120J 1200V, 100A Ultrafast Soft Recovery Dual Rectifier Diode
APT2X100D20J 200V, 100A Ultrafast Soft Recovery Dual Rectifier Diode

APT40GU60JU3 : Boost Chopper PT Igbt

APT83GU30B : Low Cost 300V Discrete Igbt Product Line Replaces 200-300V MOSFETs

APTGT100A120D1 : 3 Phase Bridge Trench IGBT Power Module

APT5010JLL_04 : Power MOS 7 Mosfet

APT6025BFLL_04 : Power MOS V Mosfet

MSC80064 : RF & Microwave Transistors General Purpose Linear Applications

APTGF90H60TG : 3 Phase Bridge NPT IGBT Power Module

MS2341 : RF & Microwave Transistors Avionics Applications

APT2X31D20J_05 : Ultrafast SOFT Recovery Rectifier Diode

APTGF165DA60D1 : Buck Chopper NPT IGBT Power Module

Same catergory

2SB1409 : Silicon PNP Epitaxial. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

5KP5.0S-180CA : Transient Voltage Suppressor.

BUK7535-100A : BUK7535-100A; BUK7635-100A; Trenchmos (tm) Standard Level Fet. N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance. Product availability: SOT404 (D2-PAK). TrenchMOSTM technology Q101 compliant 175 C rated Standard level compatible. s Automotive and general purpose power switching: 24 V and 42 V loads x Motors, lamps.

CM30MD3-12H : Type = Igbt Module ;; Voltage = 600V ;; Current = 30A ;; Circuit Configuration = 1-Phase Converter + Inverter ;; Recommended For Designs =   ;; Switching Loss Curves =.

GBPC1508 : 12/15/25 & 35 Ampere Glass Passivated Bridge Rectifiers. provided very low thermal resistance for maximum heat dissipation. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. PD RJL Power Dissipation Thermal Resistance, Junction to Lead Forward Voltage Drop, per bridge A GBPC35 Reverse Current, per leg @ rated 125C I2t rating for fusing 25 GBPC35.

MC914 : Small Signal. Pellet Diodes.

MRF840 : RF Power Transistor NPN Silicon. . designed for 12.5 volt UHF largesignal, commonbase amplifier applications in industrial and commercial FM equipment operating in the range 960 MHz. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 10 Watts Power Gain 6.0 dB Min Efficiency = 50% Min Series Equivalent LargeSignal Characterization Internally Matched Input for Broadband.

RBV-1004B : Bridge Diodes ( Schottky Barrier ). Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) Tj (C) Tstg (C) VF (V) max per element Electrical Characteristics (Ta 25C) IR (mA) VR = VRM Others Rth ( j-c) IF /IRP (mA) (C/ W) Mass Fig. (g) 50Hz With Half-cycle Sinewave Heatsink Single Shot .

SGP20N60RUF : Medium Voltage 600-1199 Volts. Discrete, Short Circuit Rated Igbt. Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Short circuit rated = 100C,.

XN0C301 : RETs (Resistor Equipped transistors). Marking = 4R ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.3 ;; R1(kW ) = ;; R2(kW ) = ;; Package = Mini5-G1.

Si2325DS : P-Channel Power MOSFET. D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size APPLICATIONS D Active Clamp Circuits in DC/DC Power Supplies ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Single-Pluse Avalanche.

05002-3R0KAZ : CAP,CERAMIC,3PF,250VDC,.05PF -TOL,.05PF +TOL,C0G TC CODE,-30,30PPM TC,0603 CASE. s: Dielectric: Ceramic Composition.

05002-470CKMP : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.000047 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 4.70E-5 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style:.

0805-181HG : 1 ELEMENT, 0.18 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ceramic ; Lead Style: WRAPAROUND ; Application: General Purpose, RF Choke ; Inductance Range: 0.1800 microH ; Inductance Tolerance: 3 (+/- %) ; DCR: 0.6400 ohms ; Rated DC Current: 400 milliamps.

FBI10A7M1-4 : 3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 170000 mA ; RoHS Compliant: RoHS ; Package: PLASTIC PACKAGE-4 ; Pin Count: 4 ; Number of Diodes: 1.

MG12FA100K : RESISTOR, METAL GLAZE/THICK FILM, 0.5 W, 1 %, 100 ppm, 100000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 100000 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 100 ±ppm/°C ; Power Rating: 0.5000.

SRM3HF : 20 A, 300 V, SILICON, RECTIFIER DIODE. s: Package: HERMETIC SEALED PACKAGE-2 ; Number of Diodes: 1 ; VRRM: 300 volts ; IF: 20000 mA ; trr: 0.0400 ns.

222297111429 : CAP,CERAMIC,33PF,500VDC,2% -TOL,2% +TOL,NP0 TC CODE,-30,30PPM TC,1206 CASE. s: Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition.

2SK3666-2 : 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET. s: Polarity: N-Channel ; PD: 200 milliwatts ; Package Type: CP, 3 PIN ; Number of units in IC: 1.

 
0-C     D-L     M-R     S-Z