Details, datasheet, quote on part number: APT20N60BC3
PartAPT20N60BC3
Category
Description600, 0.190,  , 20.7, TO-247 B ,
CompanyAdvanced Power Technology
DatasheetDownload APT20N60BC3 datasheet
Cross ref.Similar parts: R6024ENZC8, R6020ENZC8
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Features, Applications

Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated TO-247 or Surface Mount D3PAK Package

Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current = 25C Pulsed Drain Current

Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current

Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS 250A) On State Drain Current

Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 150C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, = 1mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"

Symbol Ciss Coss Crss Q gd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

Test Conditions VGS = 0V VDS = 1 MHz VGS 0 to10V VDD ID = ID[Cont.] @ 25C VGS = 13V VDD = 380 VDSS ID = ID[Cont.] MIN TYP MAX UNIT

Gate-Source Charge Gate-Drain ("Miller Charge Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time

Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage

Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 480V Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 480V Peak Diode Recovery

Symbol RJC RJA Characteristic Junction to Case Junction to Ambient

3 See MIL-STD-750 Method 3471 4 dv/ dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID Cont. di/dt 100A/s VR VDSS TJ 150C

1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%

[ ] APT Reserves the right to change, without notice, the specifications and information contained herein.

4 Transient thermal impedance ZthJC = f (tp ) parameter: D = tp/T


 

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