Details, datasheet, quote on part number: APT26UG30SA
PartAPT26UG30SA
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors)
DescriptionIgbt, Power MOS 7, 300V, 26A, 11NS
CompanyAdvanced Power Technology
DatasheetDownload APT26UG30SA datasheet
PackagesTO-263
  

 

Features, Applications

The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.

Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff

Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient

Continuous Collector Current = 25C Continuous Collector Current = 100C Pulsed Collector Current

Switching Safe Operating Area = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 250A) Gate Threshold Voltage (VCE = VGE, = 25C) MIN TYP MAX UNIT

Collector-Emitter On Voltage (VGE = 25C) Collector-Emitter On Voltage (VGE = 125C) Collector Cut-off Current (VCE = VCES, VGE = 25C)

Collector Cut-off Current (VCE = VCES, VGE = 125C) Gate-Emitter Leakage Current (VGE = 20V)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) Eon1 Eon2 Eoff td(on) tr td(off) Eon1 Eon2 Eoff Symbol RJC WT Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge

Test Conditions Capacitance VGE = 0V, VCE = 1 MHz Gate Charge VGE = 15V VCE = 5, VGE = 300V Inductive Switching (25C) VCC = 200V VGE = 13A

Gate-Emitter Charge Gate-Collector ("Miller Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight

1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

APT Reserves the right to change, without notice, the specifications and information contained herein.

VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 70
TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature

 

Related products with the same datasheet
APT26UG30K
Some Part number from the same manufacture Advanced Power Technology
APT2X100D100J 1000V, 100A Ultrafast Soft Recovery Dual Rectifier Diode
APT2X100D120J 1200V, 100A Ultrafast Soft Recovery Dual Rectifier Diode
APT2X100D20J 200V, 100A Ultrafast Soft Recovery Dual Rectifier Diode
APT2X100D30J 300,  , 1.30, 100, ISOtop J ,
APT2X100D40J 400V, 100A Ultrafast Soft Recovery Dual Rectifier Diode
APT2X100D60J 600V, 100A Ultrafast Soft Recovery Dual Rectifier Diode
APT2X100S20J 200V, 100A High Voltage Schottky Diode
APT2X101D100J 1000V, 100A Ultrafast Soft Recovery Dual Rectifier Diode
APT2X101D120J 1200V, 100A Ultrafast Soft Recovery Dual Rectifier Diode
APT2X101D20J 200V, 100A Ultrafast Soft Recovery Dual Rectifier Diode
APT2X101D30J 300,  , 1.30, 100, ISOtop J ,
APT2X101D40J 400V, 100A Ultrafast Soft Recovery Dual Rectifier Diode
APT2X101D60J 600V, 100A Ultrafast Soft Recovery Dual Rectifier Diode
APT2X101S20J 200V, 100A High Voltage Schottky Diode
APT2X10SC120J Silicon Carbide (SiC) Schottky Diode
APT2X30D100J 1000V, 30A Ultrafast Soft Recovery Dual Rectifier Diode
APT2X30D120J 1200V, 30A Ultrafast Soft Recovery Dual Rectifier Diode
APT2X30D20J
APT2X30D30J 300,  , 1.30, 30, ISOtop J ,
APT2X30D40J
APT2X30D60J

APT1201R5BVR : 1200V, 10A Power MOS V Transistor

APT13GP120BSC : Silicon Carbide (SiC) Schottky Diode

APT14050JVFR : 1400, 0.500,  , 23, ISOtop J ,

APT20M16LLL :

APT50M65LFLL :

APT6017LLL : 600V, 35A Power MOS 7 Transistor

APT8058HVR : 800V, 13.5A Power MOS V Transistor

APTM120H29F : Full Bridge

APT10030L2VR_04 : Power MOS 7TM is a new Generation of low Loss, high Voltage, N-channel Enhancement mode Power Mosfets.

 
0-C     D-L     M-R     S-Z