Details, datasheet, quote on part number: APT30GF60JU3
PartAPT30GF60JU3
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors)
DescriptionBoost Chopper NPT Igbt
CompanyAdvanced Power Technology
DatasheetDownload APT30GF60JU3 datasheet
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PackagesSOT-227
  

 

Features, Applications

Application AC and DC motor control Switched Mode Power Supplies Features

- Low voltage drop - Low tail current - Switching frequency to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated ISOTOP Package (SOT-227) Very low stray inductance High level of integration

Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat

Symbol VCES IC1 IC2 ICM VGE PD ILM IFAV IFRMS Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation RBSOA clamped Inductive load Current RG=11 Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) = 25C

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

All ratings = 25C unless otherwise specified Electrical Characteristics

Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions VGE = 25C VGE = 0V VCE = 25C VGE = 125C VGE = VCE, = 700A VGE = 20V, VCE = 0V Min

Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Ets Td(on) Tr Td(off) Tf Eon Eoff Ets Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate Emitter Charge Gate Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total switching Losses Test Conditions VGE = 0V VCE = 1MHz VGS = 15V VBus = 30A Resistive Switching (25C) VGE = 15V VBus = 10W Inductive Switching (25C) VGE = 15V VBus = 10W Inductive Switching (150C) VGE = 15V VBus = 10W Min Typ Max Unit pF

Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current = 400V di/dt = 400V di/dt =200A/s Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions 200V IF=1A,VR=30V di/dt =100A/s Min Typ 125C ns Max 250 500 Unit A pF

Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Junction to Ambient (IGBT & Diode)

Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting or 4mm Machine and terminals = 4mm Machine) Package Weight


 

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