Details, datasheet, quote on part number: APT30GP60JDF1
Description600,  , 2.70, 31, ISOtop J ,
CompanyAdvanced Power Technology
DatasheetDownload APT30GP60JDF1 datasheet
Find where to buy


Features, Applications

A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alternative to a Power MOSFET.

Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff

Symbol VCES VGE VGEM I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient

Continuous Collector Current = 25C Continuous Collector Current = 110C Pulsed Collector Current

Switching Safe Operating Area = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 500A) Gate Threshold Voltage (VCE = VGE, = 25C) MIN TYP MAX UNIT

Collector-Emitter On Voltage (VGE = 25C) Collector-Emitter On Voltage (VGE = 125C) Collector Cut-off Current (VCE = 600V, VGE = 25C)

Collector Cut-off Current (VCE = 600V, VGE = 125C) Gate-Emitter Leakage Current (VGE = 20V)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge

Test Conditions Capacitance VGE = 0V, VCE = 1 MHz Gate Charge VGE = 15V VCE = 5, VGE = 600V Inductive Switching (25C) VCC(Peak) = 400V VGE = 30A

Gate-Emitter Charge Gate-Collector ("Miller Charge Switching SOA
td(on) tr td(off) Eon1 Eon2 Eoff td(on) tr td(off) Eon1 Eon2 Eoff

Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy

Turn-on Switching Energy (Diode) Turn-off Switching Energy

Symbol RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm

1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

APT Reserves the right to change, without notice, the specifications and information contained herein.

VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ, JUNCTION TRMPERATURE (C) FIGURE 6, On State Voltage vs Junction Temperature 90 80
TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature


Some Part number from the same manufacture Advanced Power Technology
APT30GT60AR 600,  , 2.50, 30, TO-3 a ,
APT30GU60JU2 Boost Chopper
APT30GU60JU3 Boost Chopper PT Igbt
APT30M17JFLL 300, 0.017,  , 135, ISOtop J ,
APT30M30B2FLL 300, 0.030,  , 100, T-max B2 ,
APT30M30JFLL 300, 0.030,  , 88, ISOtop J ,
APT30M30LFLL 300, 0.030,  , 100, TO-264 L ,
APT30M36B2FLL 300, 0.036,  , 84, T-max B2 ,
APT30M36JFLL 300, 0.036,  , 76, ISOtop J ,

APL501P : 500V, 43A, Power MOS iv Transistor

APT2X61D30J : 300,  , 1.40, 60, ISOtop J ,

APT4SC60K : Silicon Carbide (SiC) Schottky Diode

APTDF200H60 : Fast diode rectifier bridge

APT10030L2VFR_04 : Power MOS 7TM is a new Generation of low Loss, high Voltage, N-channel Enhancement mode Power Mosfets.

APT60DQ120LCT : Ultrafast SOFT Recovery Rectifier Diode

APT60DQ120SG : Ultrafast SOFT Recovery Rectifier Diode

APT60M75JVFR : Power MOS 7 R Mosfet

APTM20UM03FAG : Single Switch Series & Parallel Diodes Mosfet Power Module

Same catergory

160CMQ035 : 35V 160A Schottky Common Cathode Diode in a TO-249AA (ISOlated) Package.

IRFP4710 : 100V Single N-channel HexFET Power MOSFET in a TO-247AC Package. Applications l High frequency DC-DC converters l Motor Control l Uninterruptible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG.

MS28F016SV : 16M. 16-mbit ( 1-mbit X 16, 2-mbit X 8 ) Flashfiletm Memory. C SE2 Grade 125 C QML Certified SE1 Grade SmartVoltage Technology User-Selectable or 5V VCC User-Selectable or 12V VPP Three Voltage Speed Options 80 ns Access Time 85 ns Access Time 120 ns Access Time 10% 1 Million Erase Cycles per Block Typical 3 MB sec Burst Write Transfer Rate Configurable or x16 Operation 56-Lead SSOP Plastic Package Backwards-Compatible.

SN74ALS640BDW : Standard Transceivers. ti SN74ALS640B, Octal Bus Transceivers. Bidirectional Bus Transceivers in High-Density 20-Pin Packages Inverting Logic Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK), and Standard Plastic (N) and Ceramic (J) 300-mil DIPs These octal bus transceivers are designed for asynchronous two-way communication between data buses. These devices transmit data.

SN75LBC179 : Low-power Differential Line Driver And Receiver Pairs. SN65LBC179, SN65LBC179Q LOW-POWER DIFFERENTIAL LINE DRIVER AND RECEIVER PAIRS Designed for High-Speed Multipoint Data Transmission Over Long Cables Operates With Pulse Widths as Low 30 ns Low Supply Current. 5 mA Max Meets or Exceeds the Standard Requirements of ANSI RS-485 and ISO 8482:1987(E) Common-Mode Voltage Range 12 V Positive- and Negative-Output.

PG0426681NL : SMT Power Inductors Flat Coils. Height: 3.2mm Max Footprint: x 7.0mm Max Current Rating: 60Apk RoHS compliant Low DC Resistance High temperature core material, no thermal aging below 150C Weight.0.6 grams Tape & Reel.1400/reel Dimensions: Inches mm Unless otherwise specified, all tolerances are .010 0,25 1. The temperature of the component (ambient plus temperature rise) must be within.

IXFK62N25 : Hiperfet Power Mosfets Single Mosfet Die. Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions to 150C; RGS 1 M Continuous Transient = 25C, pulse width limited by TJM 25C IS IDM, di/dt 100 A/s, VDD VDSS = 25C mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 l International standard packages l Low RDS (on) HDMOSTM process.

V300B5T100B : 300vin / 5vout / 400watts Dc-dc Converter Module. DC input range: - 375V Input surge withstand: 400V for 100ms DC output: 5V Programmable output: to 110% Regulation: 0.2% no load to full load Efficiency: 85% Maximum operating temperature: 100C at full load Power density: 79W/cubic inch Height above board: 0.43 in. (10,9 mm) Parallelable, with N+M fault tolerance Low noise ZCS/ZVS architecture Shown.

HY5V22F-5 : 4 Banks x 1M x 32bit Synchronous DRAM. Revision No. 0.1 History Defined Preliminary Modified FBGA Ball Configuration Typo. Changed Functional Block Diagram from to A11. Changed VDD min from to 3.135V. Changed Cap. Value from to 4pf. Insert tAC2 Value. Insdrt tRAS & CLK Value. Remark Defined IDD Spec. Delited Preliminary. Changed IDD Spec. 133MHz Speed Added Changed FBGA Package Size from.

1920NP-7 : SCISSOR, SIDEBENT. High-carbon tool-steel blades Industrial quality suitable for cutting textiles, leather etc. Sidebent handles for cutting on a surface .

CP03UNM : BATTERY, CORDLESS TEL 3.6V 320MAH BATTERY, CORDLESS TEL 3.6V 320MAH. s: Battery Size Code: - ; Battery Capacity: 320mAh ; Battery Voltage: 3.6V ; Battery Technology: Nickel Metal Hydride ; External Diameter: - ; External Height: 9mm ; External Width: 51mm ; External Depth: 51mm ; Weight: 70g ; Battery Terminals: Wire Leads ; Battery IEC Code: - ; Battery.

293D107X9016E2TE3 : 100F Tantalum Capacitor 2917 (7343 Metric) 16V; CAP TANT 100UF 16V 10% 2917. s: Capacitance: 100F ; Voltage - Rated: 16V ; Tolerance: 10% ; : General Purpose ; Operating Temperature: -55C ~ 125C ; Lead Spacing: - ; ESR (Equivalent Series Resistance): 600.0 mOhm ; Lifetime @ Temp.: - ; Mounting Type: Surface Mount ; Type: Molded ; Package / Case:.

EMC20DRES : Gold Panel Mount Card Edge, Edgeboard Connector Connectors, Interconnect Non Specified - Dual Edge; CONN EDGECARD 40POS .100 EXTEND. s: Card Thickness: 0.062" (1.57mm) ; Card Type: Non Specified - Dual Edge ; Contact Finish: Gold ; Mounting Type: Panel Mount ; : - ; Number of Positions: 40 ; Number of Rows: 2 ; Pitch: 0.100" (2.54mm) ; Packaging: Tube.

IXGH32N90B2 : Igbt - Single Discrete Semiconductor Product 64A 900V 300W Standard; IGBT 900V 64A TO-247. s: Input Type: Standard ; Voltage - Collector Emitter Breakdown (Max): 900V ; Current - Collector (Ic) (Max): 64A ; Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A ; Power - Max: 300W ; Mounting Type: Through Hole ; Package / Case: TO-247-3 ; Packaging: Tube ; Lead Free.

CPC1001N : Optoisolator - Transistor, Photovoltaic Output Channel Surface Mount 4-SOP; ISOL 1.5KV 1CH TRANS OUT 4-SOP. s: Voltage - Isolation: 1500Vrms ; Input Type: DC ; Output Type: Transistor ; Current - Output / Channel: - ; Voltage - Output: - ; Vce Saturation (Max): 300mV ; Current Transfer Ratio (Min): 100% @ 200A ; Mounting Type: Surface Mount ; Package.

DriveStation DDR : ULTRA FAST USB 3.0 HARD DRIV. Buffalo's DriveStation DDR is an easy to use, high performance USB 3.0 desktop hard drive that offers ultra fast transfer speeds, comparable to SSD. Combining the high capacity of an HDD with 1 GB of DRAM cache, DriveStation DDR provides SSD-like performance. With blazing fast transfer speeds up to 408 MB/s, it is up to 2.3x.

ECWH8A102HU : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 2000 V, 0.001 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 1.00E-3 microF ; Capacitance Tolerance: 3 (+/- %) ; WVDC: 2000 volts ; Mounting.

0-C     D-L     M-R     S-Z