Details, datasheet, quote on part number: APT30GP60JDF1
PartAPT30GP60JDF1
Category
Description600,  , 2.70, 31, ISOtop J ,
CompanyAdvanced Power Technology
DatasheetDownload APT30GP60JDF1 datasheet
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Features, Applications

A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alternative to a Power MOSFET.

Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff

Symbol VCES VGE VGEM I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient

Continuous Collector Current = 25C Continuous Collector Current = 110C Pulsed Collector Current

Switching Safe Operating Area = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 500A) Gate Threshold Voltage (VCE = VGE, = 25C) MIN TYP MAX UNIT

Collector-Emitter On Voltage (VGE = 25C) Collector-Emitter On Voltage (VGE = 125C) Collector Cut-off Current (VCE = 600V, VGE = 25C)

Collector Cut-off Current (VCE = 600V, VGE = 125C) Gate-Emitter Leakage Current (VGE = 20V)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge

Test Conditions Capacitance VGE = 0V, VCE = 1 MHz Gate Charge VGE = 15V VCE = 5, VGE = 600V Inductive Switching (25C) VCC(Peak) = 400V VGE = 30A

Gate-Emitter Charge Gate-Collector ("Miller Charge Switching SOA
td(on) tr td(off) Eon1 Eon2 Eoff td(on) tr td(off) Eon1 Eon2 Eoff

Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy

Turn-on Switching Energy (Diode) Turn-off Switching Energy

Symbol RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm

1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

APT Reserves the right to change, without notice, the specifications and information contained herein.

VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ, JUNCTION TRMPERATURE (C) FIGURE 6, On State Voltage vs Junction Temperature 90 80
TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature

 

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