Details, datasheet, quote on part number: APT30GT60BRD
PartAPT30GT60BRD
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors)
Description
CompanyAdvanced Power Technology
DatasheetDownload APT30GT60BRD datasheet
Cross ref.Similar parts: IRGP50B60PD1
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Features, Applications

The Thunderbolt IGBTTM is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBTTM combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed.

Low Forward Voltage Drop High Freq. Switching to 150KHz Low Tail Current Ultra Low Leakage Current RBSOA and SCSOA Rated Ultrafast Soft Recovery Antiparallel Diode

Symbol VCES VCGR VGE LM PD TJ,TSTG TL Parameter Collector-Emitter Voltage Collector-Gate Voltage (RGE = 20K) Gate Emitter Voltage Continuous Collector Current = 25C Continuous Collector Current = 95C Pulsed Collector Current

RBSOA Clamped Inductive Load Current = 125C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 250A) Gate Threshold Voltage (VCE = VGE, = 25C) MIN TYP MAX UNIT

Collector-Emitter On Voltage (VGE = 25C) Collector-Emitter On Voltage (VGE = 150C) Collector Cut-off Current (VCE = VCES, VGE = 25C) Collector Cut-off Current (VCE = VCES, VGE = 150C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

Test Conditions Capacitance VGE = 0V VCE = 1 MHz Gate Charge VGE = 15V VCC 0.5VCES C2 Resistive Switching (25C) VGE = 15V VCC = 10 MIN TYP MAX UNIT

Gate-Emitter Charge Gate-Collector ("Miller Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses

Symbol RJC RJA WT Characteristic Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient MIN TYP MAX UNIT

Mounting Torque (Mounting or 4mm Machine and Terminals = 4mm Machine)

Repetitive Rating: Pulse width limited by maximum junction temperature. Leakages include the FRED and IGBT. See MIL-STD-750 Method 3471 Switching losses include the FRED and IGBT.

APT Reserves the right to change, without notice, the specifications and information contained herein.

5V VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics (TJ 0 60
IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES)

TJ =+150C SINGLE PULSE VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 4, Typical Output Characteristics @ VGE 1 1ms

VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 3, Typical Output Characteristics

VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage 1.0

Qg, TOTAL GATE CHARGE (nC) Figure 6, Gate Charges vs Gate-To-Emitter Voltage

RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration


 

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