|
|
Part: APT8024LLL
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: 800V, 31A Power MOS 7 Transistor
Company: Advanced Power Technology
Datasheet: Download APT8024LLL datasheet File size : 133 kB
Request For quote: Find where to buy APT8024LLL
Datasheet text preview:
APT8024B2LL APT8024LLL
POWER MOS 7
®
8 0 0 V 3 1 A 0 . 2 4 0
B2LL
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. · Lower Input Capacitance · Lower Miller Capacitance · Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
T-MAXTM
TO-264
LLL
· Increased Power Dissipation · Easier To Drive · Popular T-MAXTM or TO-264 Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT8024 UNIT Volts Amps
800 31 124 ±30 ±40 565 4.52 -55 to 150 300 31 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
800 31 0.240 100 500 ±100 3 5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 15.5A)
Ohms µA nA Volts
050-7073 Rev A 2-2003
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Ciss Co s s Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT8024 B2LL - LLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 31A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 31A @ 25°C RG = 1.6 6 INDUCTIVE SWITCHING @ 25°C VDD = 533V, VGS = 15V ID = 31A, RG = 5 INDUCTIVE SWITCHING @ 125°C VDD = 533V VGS = 15V ID = 31A, RG = 5
MIN
TYP
MAX
UNIT
4670 862 155 160 24 103 9 5 23 4 647 525 1041 623
MIN TYP MAX UNIT Amps Volts ns µC nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
6
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
d v/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
31 124 1.3 850 22 10
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -31A)
Reverse Recovery Time (IS = -31A, dl S/ dt = 100A/µs) Reverse Recovery Charge (IS = -31A, dl S/ dt = 100A/µs) Peak Diode Recovery
dv/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RJC R J A Characteristic Junction to Case Junction to Ambient UNIT °C/W
0.22 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.00mH, RG = 25, Peak IL = 31A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID31A di/dt 700A/µs VR VDSS TJ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
Z JC, THERMAL IMPEDANCE (°C/W)
0.20
0.9
0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
050-7073 Rev A 2-2003
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
RC MODEL
80 70 60 50 40 30 20 10 0 0 VGS =15 &10 V
APT8024 B2LL - LLL
8V
ID, DRAIN CURRENT (AMPERES)
Junction temp. ( " C) 0.0893 0.0103F
7.5V
Power (Watts)
7V
0.0842
0.106F
6.5V 6V 5.5V
0.0485 Case temperature
0.981F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
100
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
NORMALIZED TO = 10V @ 15.5A
ID, DRAIN CURRENT (AMPERES)
80
1.30 1.20 1.10 1.00 0.90 0.80 VGS=10V
60
40 TJ = +125°C 20 TJ = +25°C 0 0 2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS TJ = -55°C
VGS=20V
0
35 30 25 20 15 10 5 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0.90 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
I
D
1.2
= 15.5A = 10V V
GS
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.1 1.0 0.9 0.8 0.7 0.6 -50
050-7073 Rev A 2-2003
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-25
127
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000
C, CAPACITANCE (pF)
APT8024 B2LL - LLL
50
Ciss
100µS 10 5 TC =+25°C TJ =+150°C SINGLE PULSE 1mS 10mS
1,000 Coss
1
1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
100
Crss
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 31A
200 100 TJ =+150°C TJ =+25°C 10
VDS=160V 12 VDS=400V
VDS=640V
8
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 140 120 td(off)
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 80 70 60
V
DD G
= 533V
R
= 5
T = 125°C
J
td(on) and td(off) (ns)
100 80 60 40 20 0 0
L = 100µH
V
DD G
= 533V
R
= 5
tr and tf (ns)
50 40 30 20 tf tr
T = 125°C
J
L = 100µH
td(on) 30 40 50 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10 20 30 40 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 4000
V = 533V
10
0
0
10
20
2000
= 533V R = 5
3500
SWITCHING ENERGY (µJ)
DD
I
T = 125°C
D J
= 31A
Eoff
SWITCHING ENERGY (µJ)
1500
J
T = 125°C
L = 100µH EO N includes diode reverse recovery.
3000 2500 2000
L = 100µH E O N includes diode reverse recovery.
1000
Eon 1500 1000 500 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 0 5
050-7073 Rev A 2-2003
500
Eon Eoff
25 30 35 40 45 50 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10
15
20
Typical Performance Curves
Gate Voltage
APT8024 B2LL - LLL
10 % td(on) 90% tr 5% 10 %
Switching Energy
90%
T = 125 C J
Drain Current
Gate Voltage
t
T = 125 C J
d(off) Drain Voltage
90% tf
5%
Drain Voltage
Switching Energy
10%
Drain Current
0
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60B
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
19.81 (.780) 20.32 (.800)
Source
2.21 (.087) 2.59 (.102) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
050-7073 Rev A 2-2003
1.01 (.040) 1.40 (.055)
Gate Drain
Gate Drain Source
Others parts begin by ap
AP-1 AP-2 AP-3 AP-4 AP-5 AP-6 AP-7 AP-8 AP-9 AP-10 AP-11 AP-12 AP-13 AP-14 AP-15
|
|
|
