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Part: APT8024LVFR
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: 800V, 33A Power MOS V Transistor
Company: Advanced Power Technology
Datasheet: Download APT8024LVFR datasheet File size : 133 kB
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Datasheet text preview:
APT8024B2VFR APT8024LVFR
800V 33A 0.240W
B2VFR
POWER MOS V ®
FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAXTM
TO-264
LVFR
· Identical Specifications: T-MAXTM or TO-264 Package · Lower Leakage · Fast Recovery Body Diode
MAXIMUM RATINGS
Symbol VDSS ID ID M VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter
D G S
· Faster Switching · 100% Avalanche Tested
All Ratings: TC = 25°C unless otherwise specified.
APT8024 UNIT Volts Amps
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
AL IC HN EC ON TI ED AT NC RM VA FO AD IN
800 33 132 ±30 ±40 625 5.0 -55 to 150 300 33 50
(Repetitive and Non-Repetitive)
1 4
Volts Watts W/°C °C Amps mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS I D(on) RDS(on) I DSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
800 33 0.240 250 1000 2 4 ±100
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702 -1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
050-5907
revA
8-2000
DYNAMIC CHARACTERISTICS
Symbol Ciss C oss Crss Qg Qgs Q gd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT8024 B2VFR - LVFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS VGS = 15V MIN TYP MAX UNIT pF
7700 750 370 390 35 202 18 15 66 9
nC
Gate-Source Charge Turn-on Delay Time Rise Time
Gate-Drain ("Miller") Charge
Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Pulsed Source Current
1
Continuous Source Current (Body Diode) (Body Diode)
5
Diode Forward Voltage Peak Diode Recovery
t rr Qrr I RRM
Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs)
AL IC HN EC ON TI ED AT NC RM VA FO AD IN
ID = ID [Cont.] @ 25°C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25°C MIN TYP
2
ns
MAX
UNIT Amps Volts V/ns ns
33
132 1.3 5
(VGS = 0V, IS = -ID [Cont.])
dv/
dt
Tj = 25°C Tj = 25°C
320 650
Tj = 125°C
2.2 7.5 14 24
Tj = 125°C Tj = 25°C Tj = 125°C
µC
Amps
THERMAL CHARACTERISTICS
Symbol RqJC RqJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
0.20 40
3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 5.51mH, R = 25W, Peak I = 33A j G L 5 I £ -I [Cont.], di/ = 100A/µs, T £ 150°C, R = 2.0W, V = 200V. S D j G R dt
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
8-2000
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Drain Source
revA
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
050-5907
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
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