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Part: APT8024LVR
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: 800V, 33A Power MOS V Transistor
Company: Advanced Power Technology
Datasheet: Download APT8024LVR datasheet File size : 133 kB
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Datasheet text preview:
APT8024B2VR APT8024LVR
800V 33A 0.240W
B2VR
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAXTM
TO-264
LVR
· Identical Specifications: T-MAXTM or TO-264 Package · Faster Switching · Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID ID M VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter
D G S
· 100% Avalanche Tested
All Ratings: TC = 25°C unless otherwise specified.
APT8024 UNIT Volts Amps
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
AL IC HN EC ON TI ED AT NC RM VA FO AD IN
800 33 132 ±30 ±40 625 5.0 -55 to 150 300 33 50
(Repetitive and Non-Repetitive)
1 4
Volts Watts W/°C °C Amps mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS I D(on) RDS(on) I DSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
800 33 0.240 25 250 2 4 ±100
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702 -1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
050-5950
revA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
8-2000
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT8024 B2VR - LVR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V MIN TYP MAX UNIT
7700 750 370 390 35 18 15 66 9 202
nC pF
Gate-Source Charge
Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time
Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS I SM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current Pulsed Source Current
1
Diode Forward Voltage
AL IC HN EC ON TI ED AT NC RM VA FO AD IN
VDD = 0.5 VDSS ID = 0.5 ID[Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25°C MIN TYP (Body Diode) (Body Diode)
2
ns
MAX
UNIT Amps Volts ns µC
33
132 1.3
(VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dl S /dt = 100A/µs) Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/µs)
940 25.5
THERMAL CHARACTERISTICS
Symbol RqJC RqJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
0.20 40
3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 5.51mH, R = 25W, Peak I = 33A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
8-2000
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Drain Source
revA
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
050-5950
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
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