|
|
Part: APT8052BLL
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: 800V, 15A Power MOS 7 Transistor
Company: Advanced Power Technology
Datasheet: Download APT8052BLL datasheet File size : 133 kB
Request For quote: Find where to buy APT8052BLL
Datasheet text preview:
800V 15A 0.520W
APT8052BLL APT8052SLL
BLL D3PAK
TO-247
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. · Lower Input Capacitance · Lower Miller Capacitance · Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID ID M VGS VGSM PD TJ,TSTG TL IAR EAR E AS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
SLL
· Increased Power Dissipation · Easier To Drive · TO-247 or Surface Mount D3PAK Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT8052 UNIT Volts Amps
800 15 60 ±30 ±40 295 2.36 -55 to 150 300 15 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
800 15 0.52 100 500 ±100 3 5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
050-7058 Rev A 4-2002
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702 -1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT8052 BLL - SLL
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C RG = 1.6 MIN TYP MAX UNIT
2035 406 60 77 11 51 8 7 24 6
2500 610 90 120 14 80 16 14 36 15
ns nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS IS M VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns µC
15 60 1.3 650 9.0 10
(Body Diode) (VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dl S/ dt = 100A/µs) Reverse Recovery Charge (IS = -ID[Cont.], dl S/ dt = 100A/µs) Peak Diode Recovery dv/dt
5
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
0.42 40
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 10.76mH, R = 25, Peak I = 15A temperature. j G L 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/µs VR VDSS TJ 150°C APT Reserves the right to change, without notice, the specifications and information contained herein.
0.45
Z JC, THERMAL IMPEDANCE (°C/W)
D=0.5 0.1 0.05 0.2 0.1 0.05 Note: 0.01 0.005
PDM
0.02 0.01 SINGLE PULSE
t1 t2
050-7058 Rev A 4-2002
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
0.001 10-5
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
10-4
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583
Typical Preformance Curves
ID, DRAIN CURRENT (AMPERES)
40 35 30 25 20 15 10 5 0 5.5V 5V 7V 6.5V VGS =15 &10 V 8V
Graph Deleted
6V
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS 40
ID, DRAIN CURRENT (AMPERES)
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
35 30 25 20 15 10 5 0
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.30 1.20 1.10 1.00 0.90 0.80
GS
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
VGS=10V
TJ = +125°C TJ = -55°C TJ = +25°C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
VGS=20V
0
16
ID, DRAIN CURRENT (AMPERES)
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
5 10 15 20 25 30 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
14 12 10 8 6 4 2 0 25
1.10
1.05
1.00
0.95
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I = 0.5 I [Cont.]
D D
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.90 -50
V
2.0
GS
= 10V
1.1 1.0 0.9 0.8 0.7 0.6 -50
050-7058 Rev A 4-2002
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
60
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
10,000
APT8052 BLL - SLL
100µS
C, CAPACITANCE (pF)
Ciss 1,000
10 5 1mS
Coss
100
Crss
I = I [Cont.]
D D
12
VDS=100V
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
0
TC =+25°C TJ =+150°C SINGLE PULSE
10mS 10 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 100
TJ =+150°C TJ =+25°C 10
8
VDS=250V
VDS=400V
4
20 40 60 80 100 120 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247 Package Outline
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D PAK Package Outline
( Drain Heat Sink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4 /18/95
13.79 (.543) 13.99 (.551)
8 Revised /29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) .56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
050-7058 Rev A 4-2002
Gate Drain Source
Heat Sink (Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
Others parts begin by ap
AP-1 AP-2 AP-3 AP-4 AP-5 AP-6 AP-7 AP-8 AP-9 AP-10 AP-11 AP-12 AP-13 AP-14 AP-15
|
|
|
