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Part: APT8065AVR
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: 800V, 11.5A Power MOS V Transistor
Company: Advanced Power Technology
Datasheet: Download APT8065AVR datasheet File size : 133 kB
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Datasheet text preview:
APT8065AVR
800V 11.5A 0.650 W
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-3
· Faster Switching · Lower Leakage
· 100% Avalanche Tested · Popular TO-3 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT8065AVR UNIT Volts Amps
800 11.2 44.8 ±30 ±40 200 1.6 -55 to 150 300 11.5 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS I D(on) RDS(on) I DSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
800 11.2 0.670 25 250 ±100 2 4
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
050-5823 Rev B 9-2001
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702 -1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT8065AVR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C RG = 1.6 MIN TYP MAX UNIT
3050 300 150 150 17 70 12 11 60 12
3700 420 225 225 25 105 24 22 90 24
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns µC
11.2 44.8 1.3 650 9
(Body Diode) (VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dl S/ dt = 100A/µs) Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/µs)
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
0.62 30
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 19.3mH, R = 25, Peak I = 11.2A j G L
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.7 0.5
Z JC, THERMAL IMPEDANCE (°C/W)
D=0.5 0.2
0.1 0.05
0.1 0.05 0.02 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
050-5823 Rev B 9-2001
0.01 0.005
0.01
SINGLE PULSE
0.001 10-5
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT8065AVR
16 VGS=5V, 5.5V, 6V, 7V, 10V & 15V
ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
16
VGS=6V, 7V, 10V & 15V
12 4.5V 8
12
VGS=5V & 5.5V 4.5V
8
4
4V
4 4V
0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.3
V
GS
0
30
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
24
1.2
18
1.1 VGS=10V VGS=20V
12 TJ = +125°C TJ = +25°C 0 TJ = -55°C
1.0
6
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 12
ID, DRAIN CURRENT (AMPERES)
0.9
0
5 10 15 20 25 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
10 8 6 4 2
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
0.90
-50
2.5
I = 0.5 I [Cont.]
D D
V
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
= 10V
2.0
1.1 1.0
1.5
0.9 0.8 0.7
050-5823 Rev B 9-2001
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6
-50
APT8065AVR
50
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
10µs 100µs
C, CAPACITANCE (pF)
15,000 10,000 5,000 Ciss
10 5 1ms
1,000 Coss 500
1 .5 TC =+25°C TJ =+150°C SINGLE PULSE
10ms 100ms DC
Crss .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
.1
1 5 10 50 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
50
16
VDS=100V VDS=250V
10 5
TJ =+150°C
TJ =+25°C
12
VDS=400V
8
1 .5
4
50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
.1
TO-3 (TO-204AE) Package Outline
Seating Plane
3.84 (.151) 4.09 (.161) (2-Places)
Gate
Source
16.64 (.655) 17.15 (.675) 38.61 (1.52) 39.12 (1.54)
22.23 (.875) Max.
1.47 (.058) 1.60 (.063) (2-Places)
Drain (Case)
29.90 (1.177) 30.40 (1.197)
1.52 (.060) 3.43 (.135) 6.35 (.250) 9.15 (.360) 11.18 (.440) 12.19 (.480)
5.21 (.205) 5.72 (.225) 10.67 (.420) 11.18 (.440) 25.15 (0.990) 26.67 (1.050)
050-5823 Rev B 9-2001
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
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