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Part: APT8090BN
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: N-channel Enhancement Mode High Voltage Power MOSFETs
Company: Advanced Power Technology
Datasheet: Download APT8090BN datasheet File size : 277 kB
Request For quote: Find where to buy APT8090BN
Datasheet text preview:
D
TO-247
G S
APT8075BN 800V
®
13.0A 0.75 12.0A 0.90
POWER MOS IV
MAXIMUM RATINGS
Symbol V DSS ID I DM V GS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT8090BN 800V
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: T C = 25°C unless otherwise specified.
APT 8075BN APT 8090BN UNIT Volts Amps
800 13 56 ±30 310 2.48
800 12 48
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
1
Volts Watts W/°C °C
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current
2
MIN APT8075BN APT8090BN APT8075BN APT8090BN APT8075BN APT8090BN
TYP
MAX
UNIT Volts
800 800 13
Amps
ID(ON)
(VDS > ID(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
2
12 0.75
Ohms
RDS(ON)
0.90 250 1000 ±100 2 4
µA nA Volts
IDSS I GSS V GS(TH)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 1.0mA)
THERMAL CHARACTERISTICS
Symbol RJC R JA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
050-8007 Rev C
0.40 40
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 1 5 15 FAX: (541) 388-0364 FAX: (33) 5 5 6 4 7 9 7 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol Ciss C oss Crss Qg Q gs Qgd td (on) tr td (off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT8075/8090BN
Test Conditions V GS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C R G = 1.8 MIN TYP MAX UNIT
2410 370 120 88 8.9 44 13 18 62 24
2950 520 180 130 13 67 27 36 94 48
ns nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM V SD t
rr
Characteristic / Test Conditions / Part Number Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage
1
MIN APT8075BN APT8090BN APT8075BN APT8090BN
TYP
MAX
UNIT
13 12 56 48 1.3 656 6.2 1200 12
Volts ns µC Amps
2
(VGS = 0V, IS = -ID [Cont.])
Reverse Recovery Time (IS = -ID [Cont.], dl S/ dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], dl S/ dt = 100A/µs)
Q rr
SAFE OPERATING AREA CHARACTERISTICS
Symbol SOA1 SOA2 ILM Characteristic Safe Operating Area Safe Operating Area Inductive Current Clamped Test Conditions / Part Number V DS = 0.4 VDSS , IDS = PD / 0.4 VDSS, t = 1 Sec. IDS = I D [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. APT8075BN APT8090BN MIN TYP MAX UNIT Watts
310 310 56 48
Amps
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 1.0 , THERMAL IMPEDANCE (°C/W) 0.5 D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 SINGLE PULSE 0.001 10 -5
PDM
0.02 0.01
Note:
t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
050-8007 Rev C
Z
JC
10 -3 10-2 10 -1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10 -4
APT8075/8090BN
16 ID, DRAIN CURRENT (AMPERES) V =6V &10V GS 16 ID, DRAIN CURRENT (AMPERES) 5.5V V 12 =10V GS 5.5V 5V 8 4.5V 4 4V 0 2 12 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE 2.5
T = 25°C J 2µ SEC. PULSE TEST NORMALIZED TO
6V
12 5V 8 4.5V 4 4V 0
0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 20 ID, DRAIN CURRENT (AMPERES) T = -55°C J
V > I (ON) x R (ON)MAX. DS D DS 230µ SEC. PULSE TEST
0
T = +25°C J
V
=10V GS
16
2.0
V
T = +125°C J
GS
= 10V @ 0.5 I [Cont.]
D
12
1.5
V =20V GS
8
1.0
4
T = +125°C J T = +25°C J
0.5
T = -55°C J
0 2 4 6 8 V , GATE-TO-SOURCE VOLTAGE (VOLTS) GS FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 16 ID, DRAIN CURRENT (AMPERES)
0
0.0
0
10 20 30 40 I , DRAIN CURRENT (AMPERES) D FIGURE 5, R (ON) vs DRAIN CURRENT
DS
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.2
12 APT8075BN
1.1
1.0
8 APT8090BN
0.9
4
0.8
50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5
I = 0.5 I [Cont.]
D D
0
25
0.7 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4
V
GS
= 10V
2.0
1.2
1.5
1.0
1.0
0.8
0.5
0.6 050-8007 Rev C
0.0 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.4 -50
Page 146
APT8075/8090BN
60 I , DRAIN CURRENT (AMPERES)
APT8075BN APT8090BN
OPERATION HERE LIMITED BY R (ON)
DS
10µS 100µS C, CAPACITANCE (pF)
10,000 C
APT8075BN
iss
10
APT8090BN
1mS 10mS 1 TC =+25°C TJ =+150°C SINGLE PULSE 100mS DC
1,000 C oss
C rss 100
D
1 5 10 50 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA , GATE-TO-SOURCE VOLTAGE (VOLTS) 20
I = I [Cont.]
D D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE , REVERSE DRAIN CURRENT (AMPERES) 100 50
10
V 16 V 12 DS
DS
=80V
=160V V DS =400V
20 T = +150°C J 10 5 T = +25°C J
8
4
2 1
GS
40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.5 1.0 1.5 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247AD Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
I
DR
V
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845) 3.55 (.140) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Drain Source
050-8007 Rev C
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Others parts begin by ap
AP-1 AP-2 AP-3 AP-4 AP-5 AP-6 AP-7 AP-8 AP-9 AP-10 AP-11 AP-12 AP-13 AP-14 AP-15
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