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Part: APT80GP60J
Category:
Description: 600, , 2.70, 68, ISOtop J ,
Company: Advanced Power Technology
Datasheet: Download APT80GP60J datasheet File size : 277 kB
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APT80GP60J
600V
POWER MOS 7 IGBT
®
E G C
E
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
SO
2 T-
27
· Low Conduction Loss · Low Gate Charge · Ultrafast Tail Current shutoff
· 100 kHz operation @ 400V, 35A · 50 kHz operation @ 400V, 50A · SSOA rated
"UL Recognized"
ISOTOP ®
C G E
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT80GP60J UNIT
600 ±20 ±30 151 68 330 330A @ 600V 462 -55 to 150 300
Watts °C Amps Volts
@ TC = 25°C
Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25°C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 1.0
2
6 2.7
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
2
I CES I GES
mA nA
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V)
5
4-2003 050-7426 Rev A
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT80GP60J
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 80A TJ = 150°C, R G = 5, VGE = 15V, L = 100µH,VCE = 600V Inductive Switching (25°C) VCC = 400V VGE = 15V I C = 80A
4
MIN
TYP
MAX
UNIT pF V nC A
9840 735 40 7.5 280 65 85 330 29 58 150 103 795 1833 1880 29 58 167 117 795 2633 2270 µJ
ns ns
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching SOA Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
4 5
R G = 5 TJ = +25°C
Turn-on Switching Energy (Diode) 5
6
µJ
Inductive Switching (125°C) VCC = 400V VGE = 15V I C = 80A R G = 5 TJ = +125°C
Turn-on Switching Energy (Diode)
6
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm
.27 N/A 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7426
Rev A
4-2003
TYPICAL PERFORMANCE CURVES
120 100 80 60 40 20 0 TC=25°C TC=125°C TC=-55°C
VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE
120 100 80 60 40 20 0
APT80GP60J
VGE = 10V. 250µs PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TC=-55°C
TC=25°C TC=125°C
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250µs PULSE TEST <0.5 % DUTY CYCLE
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC = 80A TJ = 25°C
FIGURE 1, Output Characteristics(VGE = 15V) 500
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 GATE CHARGE (nC) FIGURE 4, Gate Charge 300 VCE=480V VCE=120V VCE=300V
TJ = -55°C
IC, COLLECTOR CURRENT (A)
400
300
200 TJ = 25°C 100 TJ = 125°C 0 1 234 56 78 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3 2.5 IC= 80A 2 1.5 1 0.5 0 IC= 160A
3 2.5 IC= 80A 2 1.5 1 0.5 IC=40A IC= 160A
IC= 40A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2 1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
6
0 25 50 75 100 125 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 200
0 -50
VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE
-25
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
160
120
80
4-2003
40
050-7426
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature
0 -50
-25
Rev A
50 VGE= 10V
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
200 180 160 140 120 100 80 60 40 20 0
APT80GP60J
VGE =15V,TJ=125°C
45 40 35 30 25 20 15 10 5 VCE = 400V TJ = 25°C, TJ =125°C RG = 5 L = 100 µH VGE= 15V
VGE =15V,TJ=25°C VGE =10V,TJ=125°C VGE =10V,TJ=25°C
VCE = 400V RG = 5 L = 100 µH
0 10 20 30 40 50 60 70 80 90 100 110 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 250
RG =5, L = 100µH, VCE = 400V
10 20 30 40 50 60 70 80 90 100 110 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 160 140
RG =5, L = 100µH, VCE = 400V TJ = 125°C, VGE = 10V or 15V
200
tr, RISE TIME (ns) tf, FALL TIME (ns)
TJ = 25 or 125°C,VGE = 10V
120 100 80 60 40
TJ = 25°C, VGE = 10V or 15V
150
100
50
TJ = 25 or 125°C,VGE = 15V
20 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 5000
EOFF, TURN OFF ENERGY LOSS (µJ)
VCE = 400V L = 100 µH RG = 5
0 10 20 30 40 50 60 70 80 90 100 110 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 5000
EON2, TURN ON ENERGY LOSS (µJ)
VCE = 400V L = 100 µH RG = 5
0
TJ =125°C, VGE=15V
4000
TJ = 25°C, VGE=10V
4000
TJ = 125°C, VGE = 10V or 15V
3000 TJ =125°C,VGE=10V
3000
2000
2000
1000
TJ = 25°C, VGE=15V
1000
TJ = 25°C, VGE = 10V or 15V
0 10 20 30 40 50 60 70 80 90 100 110 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 8000
SWITCHING ENERGY LOSSES (µJ)
VCE = 400V VGE = +15V TJ = 125°C
10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 5000
SWITCHING ENERGY LOSSES (µJ)
VCE = 400V VGE = +15V RG = 5
0
Eoff 120A
7000 6000 5000 4000 3000 2000 1000 0 0
Eoff 120A
4000 Eon2 120A
Eon2 120A Eoff 80A Eon2 80A
3000
2000
Eoff 80A
Eon2 80A Eon2 40A Eoff 40A
4-2003
Eon2 40A Eoff40A
1000
Rev A
050-7426
5 10 15 20 25 30 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
TYPICAL PERFORMANCE CURVES
20,000 10,000 5,000
IC, COLLECTOR CURRENT (A)
APT80GP60J
Cies 300 2m50 200 150 100 50 0
1,000 500
Coes
100 50 Cres
10
0
10
20
30
40
50
0
100
200
300
400
500
600
700
0.30 0.25 0.20 0.15 0.10 0.05 0 0.9 0.7
ZJC, THERMAL IMPEDANCE (°C/W)
0.5 Note:
PDM
0.3 0.1 0.05 SINGLE PULSE 10-5 10-4
t1 t2
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL
170 100
0.0260
0.00119F
FMAX, OPERATING FREQUENCY (kHz)
Junction temp (°C)
50
Power (watts)
0.0584
0.0354F
Fmax = min(f max 1 , f max 2 ) f max 1 =
TJ = 125°C TC = 75°C D = 50 % VCE = 400V RG = 5
0.05 t d (on ) + t r + t d ( off ) + t f Pdiss - Pcond E on 2 + E off
0.185 Case temperature(°C)
0.463F
f max 2 = Pdiss =
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
40 60 80 100 120 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10 8 20
TJ - TC R JC
050-7426
Rev A
4-2003
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