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Part: APT83GU30B
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
Description: Low Cost 300V Discrete Igbt Product Line Replaces 200-300V MOSFETs
Company: Advanced Power Technology
Datasheet: Download APT83GU30B datasheet File size : 277 kB
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Datasheet text preview:
TYPICAL PERFORMANCE CURVES
AP 26GU 0K APT26GTU330_SA K APT26GU30SA
300V
POWER MOS 7 IGBT
®
TO-220
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
D2PAK
G
C
C
E
G
E
· Low Conduction Loss · Low Gate Charge · Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
· SSOA rated
G
C
All Ratings: TC = 25°C unless otherwise specified.
APT26GU30K_SA UNIT
E
300 ±20 ±30 47 26 85 85A @ 300V 187 -55 to 150 300
Watts °C Amps Volts
Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current
1
@ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT
300 3 4.5 1.5 1.5 250
µA nA
4-2004 050-7466 Rev B
6 2.0
Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
2 2
Volts
I CES I GES
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V)
2500 ±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies C oes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT26GU30K_SA
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 150V I C = 13A TJ = 150°C, R G = 5, VGE = 15V, L = 100µH,VCE = 300V Inductive Switching (25°C) VCC = 200V VGE = 15V I C = 13A
4 5
MIN
TYP
MAX
UNIT pF V nC A
1200 120 6 7.0 37 8 10 85 11 14 60 55 TBD 48 60 11 14 70 100 TBD 80 95
MIN TYP MAX UNIT °C/W gm ns ns
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
4 5
R G = 20 TJ = +25°C
Turn-on Switching Energy (Diode)
6
µJ
Inductive Switching (125°C) VCC = 200V VGE = 15V I C = 13A R G = 20 TJ = +125°C
Turn-on Switching Energy (Diode)
6
µJ
THERMAL AND MECHANICAL CHARACTERISTICS 0.67 N/A 1.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7466
Rev B
4-2004
TYPICAL PERFORMANCE CURVES
60 50 40 TC = -55°C 30 TC = 125°C 20 TC = 25°C 10 0
VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE
60 50 40 30 20 10 0
APT26GU30K_SA
VGE = 10V. 250µs PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TC=-55°C TC=25°C TC=125°C
0 1 2 3 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250µs PULSE TEST <0.5 % DUTY CYCLE
0 1 2 3 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC = 13A TJ = 25°C
FIGURE 1, Output Characteristics(VGE = 15V) 100
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 GATE CHARGE (nC) FIGURE 4, Gate Charge 35 40 VCE = 240V
IC, COLLECTOR CURRENT (A)
80
VCE = 60V VCE = 150V
60 TJ = -55°C TJ = 25°C TJ = 125°C
40
20
0
0
2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3 2.5 2 1.5 1 0.5 0 IC = 26A
2.5 IC = 26A 2.0 IC = 13A 1.5 IC = 6.5A
IC = 13A IC = 6.5A
1.0
0.5
VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 70
0 -50
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.05
IC, DC COLLECTOR CURRENT(A)
60 50 40 30 20 10 0 -50
4-2004 050-7466 Rev B
1.00
0.95
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90 -50
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature
14
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
80 70 60
APT26GU30K_SA
VGE =15V,TJ=125°C
12 10 8 6 4 2 0 VCE = 400V TJ = 25°C, TJ =125°C RG = 20 L = 100 µH VGE= 15V
VGE =15V,TJ=25°C
50 40 30 20 10 0 VCE = 200V RG = 20 L = 100 µH
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 30 25
tr, RISE TIME (ns) tf, FALL TIME (ns)
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 120 RG = 20, L = 100µH, VCE = 200V 100 80 60 40 20
TJ = 25°C, VGE = 15V TJ = 125°C, VGE = 15V
20 15 10 5 0
RG = 20, L = 100µH, VCE = 200V TJ = 25 or 125°C,VGE = 15V
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 250
EON2, TURN ON ENERGY LOSS (µJ)
VCE = 200V VGE = +15V RG = 20
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 250
EOFF, TURN OFF ENERGY LOSS (µJ)
VCE = 200V VGE = +15V RG = 20
0
200
TJ = 125°C,VGE =15V
200
TJ = 125°C, VGE = 15V
150
150
100
100
50
TJ = 25°C,VGE =15V
50
TJ = 25°C, VGE = 15V
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 300
SWITCHING ENERGY LOSSES (µJ)
VCE = 200V VGE = +15V TJ = 125°C
0
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 250
SWITCHING ENERGY LOSSES (µJ)
VCE = 200V VGE = +15V RG = 20
0
Eoff, 26A
250 200 150 100 50 0
200
Eoff,26A
Eon2, 26A
150
Eon2,26A
Eoff, 13A Eon2, 13A Eon2, 6.5A 0
100 Eoff, 13A 50 Eoff, 6.5A Eon2,6.5A 0 0 Eon2,13A
4-2004
Eoff, 6.5A
Rev B
050-7466
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
2,000 1,000 500
C, CAPACITANCE ( F)
P
100 Cies 80 Coes
IC, COLLECTOR CURRENT (A)
APT26GU30K_SA
100 50
60
40
10
Cres
20
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.70 0.60 0.50 0.40 0.5 0.30 0.20 0.10 0 0.3 0.9
1
0 50 100 150 200 250 300 350 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
0
ZJC, THERMAL IMPEDANCE (°C/W)
0.7
Note:
PDM t1 t2
0.1 0.05 10-5 10-4 SINGLE PULSE
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL
300
FMAX, OPERATING FREQUENCY (kHz)
Junction temp (°C) 0.192 0.00537F
100
Power (watts)
0.391
0.0342F
Fmax = min(f max 1 , f max 2 )
50
f max 1 =
TJ = 125°C TC = 75°C D = 50 % VCE = 200V RG = 20
0.05 t d (on ) + t r + t d ( off ) + t f Pdiss - Pcond E on 2 + E off
0.0860 Case temperature(°C)
0.432F
f max 2 = Pdiss =
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
10 15 20 25 30 35 40 45 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
5
TJ - TC R JC
050-7466
Rev B
4-2004
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