|
Details, datasheet, quote on part number:JX2N7227
| |
| Part: | JX2N7227 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | Jedec Registered N - Channel High Voltage Power MOSFETs |
| Company: | Advanced Power Technology |
| Datasheet: | Download JX2N7227 datasheet File size : 64 kB |
| Request For quote: | Find where to buy JX2N7227
|
| |
Datasheet text preview:
D
TO-254
G S
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS VGS ID I DM IAR Parameter Drain-Source Voltage Gate-Source Voltage
TM
2N7227 400 Volt JX2N7227* JV2N7227*
0.315
*QUALIFIED TO MIL-S-19500/592 31/7/92
JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS
All Ratings: TC = 25°C unless otherwise specified.
2N7227 UNIT Volts
400 ±20 14
ed at R he
MIN
Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Avalanche Current
1 1
9
Amps
56 14 150
Watts
Total Power Dissipation @ TC = 25°C PD Total Power Dissipation @ TC = 100°C Linear Derating Factor EAS EAR TJ,TSTG TL Single Pulse Avalanche Energy Repetitive Avalanche Energy
60 1.2 700 15 -55 to 150 300
°C W/K mJ
Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS VGS(TH) IDSS I GSS ID(ON) Characteristic / Test Conditions
va la
nc
TYP
MAX
UNIT Volts
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Gate Threshold Voltage
400 2 4 25 250 ±100 14 0.315 0.680 0.415
A
(VDS = VGS, ID = 250µA)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) On State Drain Current
2
µA nA Amps
(VDS > ID(ON) x R DS(ON) Max, VGS = 10V)
2 2 2
Drain-Source On-State Resistance RDS(ON) Drain-Source On-State Resistance Drain-Source On-State Resistance
(VGS = 10V, ID = 9.0A) (VGS = 10V, ID = 9.0A, TC = 125°C) (VGS = 10V, ID = 14.0A)
Ohms
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
051-4015 Rev D
DYNAMIC CHARACTERISTICS
Symbol CDC Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Drain-to-Case Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions f = 1 MHz VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 2.35 MIN TYP MAX
2N7227
UNIT
12 2400 385 160 100 12 41 12 18 40 13
24 2800
pF
540 240 150 24 65 35 190
ns nC
170 130
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns µC
14 56 1.7 279 3.6 1200 9.0
(Body Diode) (VGS = 0V, IS = -ID [Cont.])
Reverse Recovery Time (IS = -ID [Cont.], dl S/ dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], dl S/ dt = 100A/µs)
THERMAL CHARACTERISTICS
Symbol RJC RJA
1 2
Characteristic Junction to Case Junction to Ambient
MIN
TYP
MAX
UNIT K/W
3
0.83 31
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
1.0 Z JC, THERMAL IMPEDANCE (°C/W) 0.5 D=0.5 0.2 0.1 0.05 0.1 0.05 0.02 0.01 0.01 0.005 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
051-4015 Rev D
0.001 1 0- 5
1 0- 3 1 0- 2 1 0- 1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1 0- 4
2N7227
20
I D , DRAIN CURRENT (AMPERES)
VGS=6V, 6.5V & 10V
I D , DRAIN CURRENT (AMPERES)
20 5.5V
VGS=10V VGS=6.5V VGS=6V 5.5V
16
16
12 5V 8 4.5V 4 4V 0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 20 0
12 5V 8 4.5V 4 4V 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.75
V
GS
I D , DRAIN CURRENT (AMPERES)
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
16
TJ = +125°C
1.50
12
1.25 VGS=10V
8 TJ = +125°C TJ = +25°C 0 TJ = -55°C
1.00
4
VGS=20V
2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 16
0
0.75
0
10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.2
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE (VOLTS) (NORMALIZED)
I D , DRAIN CURRENT (AMPERES)
1.1
12
1.0
8
0.9
4
0.8
50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5
I = 0.5 I [Cont.]
D D
0
25
0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4
V
GS
= 10V
2.0
1.2
1.5
1.0
1.0
0.8
0.5
0.6 051-4015 Rev D
0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.4 -50
-25
|
|
