Details, datasheet, quote on part number: MS1051
PartMS1051
Category
DescriptionRF & Microwave Transistors HF SSB Applications
CompanyAdvanced Power Technology
DatasheetDownload MS1051 datasheet
Quote
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Features, Applications

30 MHz 12.5 VOLTS POUT = 100 WATTS GPE 12.0 dB MINIMUM IMD = 30 dBc GOLD METALLIZATION COMMON EMITTER CONFIGURATION

The 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions.

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage TEmperature

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 11/2005
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

 

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