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Details, datasheet, quote on part number:VLB70-12S
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Datasheet text preview:
VLB70-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VLB70-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
· · · OmnigoldTM Metalization System
B
ØC
D
H
I J
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ T STG JC 12.0 A 36 V 18 V 3.5 V 183 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 1.05 OC/W
O O O
DIM A B C D E F G H I J
#8-32 UNC-2A F E
G
MINIMUM
i n c h e s / mm
MAXIMUM
i n c h e s / mm
. 2 2 0 / 5.59 . 9 8 0 / 24.89 . 3 7 0 / 9.40 . 0 0 4 / 0.10 . 3 2 0 / 8.13 . 1 0 0 / 2.54 . 4 5 0 / 11.43 . 0 9 0 / 2.29 . 1 5 5 / 3.94
. 2 3 0 / 5.84 . 3 8 5 / 9.78 . 0 0 7 / 0.18 . 3 3 0 / 8.38 . 1 3 0 / 3.30 . 4 9 0 / 12.45 . 1 0 0 / 2.54 . 1 7 5 / 4.45 . 7 5 0 / 19.05
ORDER CODE: ASI12738
CHARACTERISTICS
SYMBOL
BVCBO BVCES BVCEO BVEBO I CES h FE COB GP C IC = 50 mA
TC = 25 C
O
NONETEST CONDITIONS
IC = 100 mA IC = 50 mA IE = 10 mA VCE = 15 V VCE = 5.0 V VCB = 12.5 V MHz VCE = 12.5 V POUT = 70 W IC = 5.0 A f = 1.0
MINIMUM TYPICAL MAXIMUM
36 36 18 3.5 10 10 --270 10 60
UNITS
V V V V mA --pF
f = 50 MHz
dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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