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Details, datasheet, quote on part number:R2560A
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Datasheet text preview:
Preliminary Data Sheet, Rev. 1 June 2001
R2560A High-Power 12 GHz Photodiode
Description
The R2560A incorporates a high-speed planar PIN diode to provide a highly reliable, high-power photodiode module. This module is well suited for receiver applications with optical preamplification. The diode is well matched over the operating frequency band, thereby simplifying high-speed integration.
Block Diagram Features
PIN PHOTODIODE
s s s s s s s
Highly reliable planar photodiode technology High power capability dc coupled High breakdown voltage Bandwidth >13 GHz typical Good RF match: >13 dB typical return loss Hermetically sealed
PIN 3 +10 V BIAS
100 RF OUT 100
PIN 6 CASE GROUND
1-1176 (F)
Applications Pin Information
s
Optically amplified systems (following EDFA or Raman amplifiers) Linear receiver applications FEC and Super-FEC to 12.5 Gbits/s
Table 1. Pin Descriptions Pin No. 1 2 3 4 5 6 Description NC NC 10 V (VPD) NC NC Ground
s s
R2560A High-Power 12 GHz Photodiode
Preliminary Data Sheet, Rev. 1 June 2001
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Parameter Operating Temperature Range Storage Case Temperature Range Photodiode Bias Voltage Average Optical Input Power Symbol TOP Tstg VPD PIN Min 0 40 -- Ò Max 70 85 15 12 Unit °C °C V dBm
Characteristics
Table 2. Electrical/Optical Characteristics (at 25 °C Case Temperature) Parameter Optical Wavelength Range Gain into a 50 Load for a Given Input Optical Power Level Responsivity Dark Current Breakdown Voltage (IR = 10 µA) High Frequency Cutoff 3 dB relative to 100MHz Low Frequency Cutoff Group Delay Variation (0.5 GHz-- 13 GHz) Relative to 2 GHz RF Output Return Loss (0.1 GHz--13 GHz) Optical Return Loss Photodiode Supply Voltage (VPD) S ymbol G R ID VB R FH I G H FLOW -- RL R F RL VP D Min 1280 17.5 0.7 -- 25 12 -- 10 10 35 8 Typ -- -- 0.8 -- -- 13 -- -- 13 -- 10 Max 1580 -- -- 1 -- -- 0 20 -- -- 12 Unit nm V/W A/W nA V GHz k Hz ps dB dB V
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Agere Systems Inc.
Preliminary Data Sheet, Rev. 1 June 2001
R2560A High-Power 12 GHz Photodiode
Outline Diagram
Dimensions are in inches and (millimeters).
1.24 (31.50) 0.10 (2.50) 4X 0.094 (2.40) 0.19 ± 0.03 (5.00 ± 0.80) 0.08 ± 0.03 (2.00 ± 0.80) 1.04 (26.40) 0.84 (21.30) 0.29 (7.40) 0.31 (7.90) 0.58 (14.70) 0.78 (19.80) 0.26 (7.00)
1 METER MIN. 6X 0.02 (0.50) 0.20 (5.10) 0.33 ± 0.03 (8.00 ± 0.80) 0.20 (5.00 )
0.70 ± 0.03 (18.00 ± 0.80)
0.15 (3.80) PIN #1
5X 0.10 (2.50)
K- CONNECTOR *
0.41 (10.40)
0.17 (4.30)
0.225 (5.70)
0.40 (1.0 0)
0.174 (4.40)
1-1169(F).f
* K-Connector is a trademark of Anritsu Company.
Agere Systems Inc.
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