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Details, datasheet, quote on part number: INA-02186
 
 
Part numberINA-02186
CategoryRF & Microwaves => Amplifiers => Small Signal Amplifiers => Bipolar
TitleBipolar
Description6V Fixed Gain, High Gain Lna For Applications to 1 GHZ
CompanyAgilent Technologies, Inc.
DatasheetDownload INA-02186 datasheet
Request For QuoteFind where to buy INA-02186
 


 
Specifications, Features, Applications
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data
Features

Cascadable 50 Gain Block Low Noise Figure: 2.0 dB Typical at 0.5 GHz High Gain: 31 dB Typical at 0.5 GHz 26 dB Typical at 1.5 GHz 3 dB Bandwidth: to 0.8 GHz Unconditionally Stable (k>1) Low Cost Plastic Package

Circuit (MMIC) feedback amplifiers housed in low cost plastic packages. They are designed for narrow or wide bandwidth commercial applications that require high gain and low noise or RF amplification. The INA series of MMICs is fabricated using Agilent's 10 GHz fT, 25 GHz fMAX, ISOSATTM-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.

Description
The INA-02184 and INA-02186 are low-noise silicon bipolar Monolithic Microwave Integrated

Parameter Device Current Power Dissipation [2,3,4] RF Input Power Junction Temperature Storage Temperature Absolute mW +13 dBm to 150C Thermal 100C/W INA-02186

Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE 25C. 3. Derate at 11.1 mW/C for > 144C for INA-02184. 4. Derate at 10 mW/C for > 110C for INA-02186.

f3 dB ISO VSWR tD Vd dV/dT Power Gain (|S21| 2) Gain Flatness dB Bandwidth[2] Reverse Isolation to 1.0 GHz to 1.0 GHz to 1.0 GHz = 0.5 GHz = 0.5 GHz = 0.5 GHz = 0.5 GHz dB dBm psec V mV/C Input VSWR (Max over Freq. Range) Output VSWR (Max over Freq. Range) 50 Noise Figure Output Power 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient = 0.5 GHz to 1.0 GHz dB GHz dB

Symbol Parameters and Test Conditions: = 35 mA, = 50 Units Min. Typ. Max. Min. Typ. Max.

Notes: 1. The recommended operating current range for this device to 40 mA. Typical performance as a function of current is on the following page. 2. Referenced from 10 MHz Gain (GP).

Part Number INA-02186-TR1 INA-02186-BLK No. of Devices Container 7" Reel Antistatic Bag 7" Reel Antistatic Bag

For more information, see "Tape and Reel Packaging for Semiconductor Devices".
Figure 1. Typical Gain and Noise Figure vs. Frequency, = 35 mA.

Figure 4. Output Power and 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, = 0.5 GHz, = 35 mA.

Figure 5. Output Power 1 dB Gain Compression vs. Frequency.



Related products with the same datasheet
INA-02184-BLK   INA-02184-TR1   INA-02186-BLK   INA-02186-TR1  


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