|
Details, datasheet, quote on part number:IVA-05228
| |
| Part: | IVA-05228 |
| Category: | RF & Microwaves => Amplifiers => Small Signal Amplifiers |
| Description: | Silicon Bipolar Mmic 1.5 GHZ Variable Gain Amplifier Differential Option |
| Company: | Agilent Technologies, Inc. |
| Datasheet: | Download IVA-05228 datasheet File size : 52 kB |
| Request For quote: | Find where to buy IVA-05228
|
| |
Datasheet text preview:
Silicon Bipolar MMIC 1.5 GHz Variable Gain Amplifier Differential Option Technical Data
IVA-05228
Features
· Differential Input and Output Capability · DC to 1.5 GHz Bandwidth; 2.0 Gb/s Data Rates · High Gain: 30 dB Typical · Wide Gain Control Range: 30 dB Typical · 5 V Bias · 5 V Vgc Control Voltage, Igc < 3 mA · Fast Gain Control Response: < 10 ns Typical · Hermetic Ceramic Package
Description
The IVA-05228 is a variable gain amplifier housed in a miniature ceramic hermetic surface mount package. This device can be used in any combination of singleended or differential inputs or outputs (see Functional Block Diagram). The lowest frequency of operation is limited only by the values of user selected blocking and bypass capacitors. Typical applications include variable gain amplification for fiber optic systems (e.g., SONET) with data rates up to 2.0 Gb/s, mobile radio and satellite receivers, millimeter wave receiver IF amplifiers and communication receivers. The IVA series of variable gain amplifiers is fabricated using Agilent's 10 GHz fT, 25 GHz fMAX
28 Package
PIN 1
Applications
· LNA or Gain Stage for 2.4 GHz and 5.7 GHz ISM Bands · Front End Amplifier for GPS Receivers · LNA or Gain Stage for PCN and MMDS Applications · C-Band Satellite Receivers · Broadband Amplifier for Instrumentation
ISOSATTM-I silicon bipolar process. This process uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide inter-metal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
2
Absolute Maximum Ratings
Symbol VCC-Vee Parameter Device Voltage Power Dissipation[2,3] Input Power Vgc-Vee TJ TSTG Junction Temperature Storage Temperature Units V mW dBm V °C °C Absolute Maximum[1] 8 600 +14 7 200 - 65 to 200 Thermal Resistance: jc = 50°C/W
[2,4]
Notes: 1. Permanent damage may occur is any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 20 mW/°C for TC > 170°C. 4. See MEASUREMENTS section "Thermal Resistance" in Communications Components Catalog for more information.
IVA-05228 Electrical Specifications[1], TA = 25°C
Symbol Gp Gp f 3dB GCR ISO Parameters and Test Conditions:[2] VCC = 5 V, Vee = 0 V, Vgc = 0 V, ZO = 50 Power Gain (|S21|2) Gain Flatness 3 dB Bandwidth[3] f = 0.05 GHz Vgc = 0 to 5 V f = 0.05 GHz Vgc = 0 to 5 V f = 0.05 to 1.5 GHz Vgc = 0 to 5 V f = 0.05 to 1.5 GHz Vgc = 0 to 5 V f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz dB dBm mVpp dBm psec mA 25 Gain Control Range[4] Reverse Isolation (|S21|2) Input VSWR VSWR Output VSWR N F 50 P1dB VOUT IP3 tD I CC 50 Noise Figure Output Power at 1 dB Gain Compression Peak-to-Peak Single-Ended Output Voltage Output Third Order Intercept Point Group Delay Supply Current f = 0.5 GHz f = 0.05 to 1.0 GHz Units dB dB GHz dB dB 1.0 25 25 Min. 25 Typ. 30 ± 0.5 1.5 30 30 1.7:1 1.5:1 9 -3 450 7 400 35 45 Max.
Notes: 1. The recommended operating voltage range for this device is 4 to 6 V. Typical performance as a function of voltage is on the following page. 2. As measured using Input Pin 1 and Output Pin 6, with Output Pin 7 terminated into 50 ohms and Input Pin 4 at AC ground. 3. Referenced from 50 MHz Gain. 4. The recommended gain control range for these devices for dynamic control is 0 to 4.2 V. Operation at gain control settings above 4.2V may result in gain increase rather than gain decrease.
3
Typical Biasing Configuration and Functional Block Diagram
Differential Input / Differential Output
C block Input 1 2 Vee = 0 V 3 4 C block C bypass 8 7 Output 6 5 C block Output + Input C block VCC = 7 V Vgc
Single Ended Input / Single Ended Output
C block Input 1 2 Vee = 0 V 3 4 C bypass C bypass 8 7 6 5 C block Output + C block VCC = 5 V Vgc 50 *
Vee = 0 V
* Optional: For Single-Ended Output operation, Pin 7 may be left unterminated (no C block or 50 ) C bypass = 1000 pF typical Good grounding of Pins 2, 3 is critical for proper operation and good VSWR performance of this part.
IVA-05228 Typical Performance, TA = 25°C, VCC = 5 V, Vee = 0 V
30 Vgc < 2.4 V 20 P1 dB 32
P1 dB (dBm)
34
0
45
2
40
10
G P (dB)
0 4.0 V 5.0 V
28
6 GP
30
10 20 30 0.1 26 8
25 ICC
24 0.2 0.5 1.0 2.0 4.0 RF FREQUENCY (GHz)
10 3 4 5 VCC (V) 6 7
20
Figure 1. Typical Variable Gain vs. Frequency.
Figure 2. Power Gain and P1 dB at 0.5 GHz and ICC vs. Bias Voltage with Vgc = 0 V.
45 40 30 5 GP
P1 dB (dBm)
34
0
32
P1 dB (dBm) GP (dB)
1
40 20 10 0
ICC (mA)
4 3 2 P1 dB 1 Igc 0 0 1 2 Vgc (V) 3 4 5
Igc (mA)
30
2
35
28
3
30 10
26
4 55
25
+25
+85
25 +125
20
TEMPERATURE (C)
Figure 3. Power Gain and P1 dB at 0.5 GHz and ICC vs. Case Temperature with Vgc = 0 V.
Figure 4. Power Gain and P1 dB at 0.5 GHz and Igc vs. Gain Control Voltage.
ICC (mA)
GP (dB)
3.7 V
30
4
35
|
|
