Digchip : Database on electronics components
 
Member, Distributor  
Log In
Email:
Password:


Part: 2SA1494

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> Switching
         -> PNP

Description: Silicon PNP Epitaxial Planar Transistor

Company: Allegro Micro Systems, Inc.

Datasheet: Download 2SA1494 datasheet     File size : 178 kB

Request For quote: Find where to buy 2SA1494



Datasheet text preview:
2SA1494
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1494 ­200 ­200 ­6 ­17 ­5 200(Tc=25°C) 150 ­55 to +150 Unit V V V A A W °C °C

Application : Audio and General Purpose
(Ta=25°C) 2SA1494 ­100max ­100max ­200min 50min ­2.5max 20typ 500typ V MHz pF
20.0min 4.0max 2 3
02 1.05 +0..1 02 0.65 +0..1 -

sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=­200V VEB=­6V IC=­50mA VCE=­4V, IC=­8A IC=­10A, IB=­1A VCE=­12V, IE=1A VCB=­10V, f=1MHz

External Dimensions MT-200
36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2

Unit

µA µA
V
a b

hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180)

sTypical Switching Characteristics (Common Emitter)
VCC (V) ­40 RL () 4 IC (A) ­10 VBB1 (V) ­10 VBB2 (V) 5 IB1 (A) ­1 IB2 (A) 1 ton (µs) 0.6typ tstg (µs) 0.9typ tf (µs) 0.2typ

5.45±0.1 B C E

5.45±0.1

03 3.0 +0..1 -

Weight : Approx 18.4g a. Type No. b. Lot No.

I C ­ V C E Characteristics (Typical)
­17
A .5 ­1

V C E ( s a t ) ­ I B Characteristics (Typical)
­3 C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V )

I C ­ V B E Temperature Characteristics (Typical)
­17 ­15 C o l l e c t o r Current I C ( A ) ( V CE= ­ 4 V )

­1A
­60

­15

0

mA

­40
C o l l e c t o r Current I C ( A )

0mA

­200m

A

­2

­10
­100mA

­10
Tem p) Temp )
(Case 25°C

I C= ­ 1 5 A ­10A ­5A 0 0 ­1 ­2 ­3

C (C

­5

­50mA

­5

I B= ­ 2 0 m A

0

0

­1

­2

­3

­4

0

0

­30°C

125°

­1 B a s e - E m i t t o r Voltage V B E ( V )

(Case

­1

ase

Temp

)

­2

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

B a s e Current I B ( A )

h F E ­ I C Characteristics (Typical)
( V CE= ­ 4 V ) 300 D C Curr e n t Gain h F E

h F E ­ I C Temperature Characteristics (Typical)
( V CE= ­ 4 V ) 200 125°C D C Curr e n t Gain h F E Transient Thermal Resistance j-a(°C/W) 2

j - a ­ t Characteristics

Typ
100 50

25°C 100 ­30°C

1

0.5

50

10 ­0.02

­0.1

­0.5

­1

­5

­10 ­17

20 ­0.02

­0.1

­0.5

­1

­5

­10 ­17

0.1

1

10

100 T i m e t(ms)

1000

2000

C o l l e c t o r Current I C ( A )

C o l l e c t o r Current I C ( A )

f T ­ I E Characteristics (Typical)
( V CE= ­ 1 2 V ) 30 ­50

Safe Operating Area (Single Pulse)
200
20 m
3m

P c ­ T a Derating

M a x i m u m Powe r Dissipat i o n P C ( W )

s

s

10ms

C u t - o f f Fr e q u e n c y f T ( M H Z )

Typ
C o l l e c t o r Curr e n t I C ( A ) 20

160

10 0m

­10 ­5

W

D

ith

s

C

In fin

120

ite he at si nk

10

­1 ­0.5 W i t h o u t Heatsink N a t u r a l Cooling

80

40 Without Heatsink 0 25 50 75 100 125 150

0 0.02

­0.1 0.1 1 E m i t t e r Current I E ( A ) 10 ­2 ­10 ­100 ­300 C o l l e c t o r - E m i t t e r Voltage V C E ( V )

5 0

A m b i e n t Temperature Ta(°C)

22




Others parts begin by 2s
2S-1   2S-2   2S-3   2S-4   2S-5   2S-6   2S-7   2S-8   2S-9   2S-10   2S-11   2S-12   2S-13   2S-14   2S-15   2S-16   2S-17   2S-18   2S-19   2S-20   2S-21   2S-22   2S-23   2S-24   2S-25   2S-26   2S-27   2S-28   2S-29   2S-30   2S-31   2S-32   2S-33   2S-34   2S-35   2S-36   2S-37   2S-38   2S-39   2S-40   2S-41   2S-42   2S-43   2S-44   2S-45   2S-46   2S-47   2S-48   2S-49