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Part: 2SA1859
Category:
Discrete
-> Transistors
-> Bipolar
-> Switching
-> PNP
Description: Silicon PNP Epitaxial Planar Transistor
Company: Allegro Micro Systems, Inc.
Datasheet: Download 2SA1859 datasheet File size : 152 kB
Request For quote: Find where to buy 2SA1859
Datasheet text preview:
2SA1859/1859A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A) sAbsolute maximum ratings (Ta=25°C)
Symbol 2SA1859 2SA1859A VCBO VCEO VEBO IC IB PC Tj Tstg 150 150 6 2 1 20(Tc=25°C) 150 55 to +150 180 180 Unit V V V A A W °C °C
Application : Audio Output Driver and TV Velocity-modulation
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO VCB= IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=6V IC=10mA VCE=10V, IC=0.7A IC=0.7A, IB=70mA VCE=12V, IE=0.7A VCB=10V, f=1MHz Conditions
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
2SA1859 2SA1859A 10max 150 10max 180min 150min 60 to 240 1.0max 60typ 30typ 180
Unit
µA µA
V V MHz pF
13.0min 16.9±0.3 8.4±0.2
V
1.35±0.15 1.35±0.15
02 0.85 +0..1 02 0.45 +0..1 2.54
3.9
±0.2
0.8±0.2
a b
ø3.3±0.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 20 RL () 20 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 100 IB2 (mA) 100 ton (µs) 0.5typ tstg (µs) 1.0typ tf (µs) 0.5typ
2.54 2.2±0.2
2.4±0.2
BCE
Weight : Approx 6.5g a. Type No. b. Lot No.
I C V C E Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) 2
A
V C E ( s a t ) I B Characteristics (Typical)
3
I C V B E Temperature Characteristics (Typical)
2 ( V CE= 4 V )
A
0m
A
00
1
6
3
1
5mA
0m
m
C o l l e c t o r Current I C ( A )
10mA
2
C o l l e c t o r Current I C ( A )
1
I B= 5 m A
1
mp)
p)
Cas
1
°C (
(Cas
I C= 2 A 0.5A 0 2 5 10 1A 50 100 500 1000 0 0
0
0
2
4
6
8
10
0.5 B a s e - E m i t t o r Voltage V B E ( V )
30°C (C
25°C
125
aseTem
eTe
eTem
p)
1
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
B a s e Current I B ( m A )
h F E I C Characteristics (Typical)
( V CE= 4 V ) 300 D C Curr e n t Gain h F E
h F E I C Temperature Characteristics (Typical)
Transient Thermal Resistance j-a(°C/W) ( V CE= 4 V ) 300 125°C D C Cur r e n t Gain h F E 7 5
j - a t Characteristics
Typ
25°C
100
100
30°C
50 0.01
0.1
0.5
1
2
50 0.01
0.1
0.5
1
2
1
1
10
100 T i m e t(ms)
1000 2000
C o l l e c t o r Current I C ( A )
C o l l e c t o r Current I C ( A )
f T I E Characteristics (Typical)
( V CE= 1 2 V ) 100 5
Safe Operating Area (Single Pulse)
20
1m s
P c T a Derating
80 C u t - o f f Fre q u e n c y f T ( M H Z ) C o l l e c t o r Cur r e n t I C ( A )
Typ
60
1 0.5
D
C
M a x i m u m Po w e r Dissipat i o n P C ( W )
10 ms
10 0m s
W ith In fin ite he
10
at si nk
40
0.1 0.5 Without Heatsink Natural Cooling 1.2SA1859 2.2SA1859A 1 5 10 2
20
0 0.01
0.05
0.1
0.5
1
2
0.01 1
50 100 200
2 0
Without Heatsink 0 25 50 75 100 125 150
E m i t t e r Current I E ( A )
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
A m b i e n t Temperature Ta(°C)
33
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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