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Part: 2SA1860
Category:
Discrete
-> Transistors
-> Bipolar
-> Switching
-> PNP
Description: Lapt Silicon PNP Epitaxial Planar Transistor
Company: Allegro Micro Systems, Inc.
Datasheet: Download 2SA1860 datasheet File size : 152 kB
Request For quote: Find where to buy 2SA1860
Datasheet text preview:
LAPT
2SA1860
Application : Audio and General Purpose
(Ta=25°C) 2SA1860 100max 100max 150min 50min 2.0max 50typ 400typ V MHz
16.2
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1860 150 150 5 14 3 80(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=150V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=500mA VCE=12V, IE=2A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
Unit
µA
23.0±0.3
V
9.5±0.2
µA
a b
pF
1.75 2.15
02 1.05 +0..1 -
3.3
0.8
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 60 RL () 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 500 IB2 (mA) 500 ton (µs) 0.25typ tstg (µs) 0.85typ tf (µs) 0.2typ
5.45±0.1 1.5 4.4
5.45±0.1 1.5
02 0.65 +0..1 -
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
I C V C E Characteristics (Typical)
14 C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V )
A m mA mA mA 00 500 400 00 3 6
V C E ( s a t ) I B Characteristics (Typical)
3
I C V B E Temperature Characteristics (Typical)
14 ( V CE= 4 V )
00
mA
7
200
mA
C o l l e c t o r Current I C ( A )
150mA
10
100mA
C o l l e c t o r Current I C ( A )
10
2
p)
Tem
p)
se
5
50mA
C (C
°C
125
0
0
1
2
3
4
0
0
0.2
0.4
0.6
0.8
1.0
0
0
30
5A
25°
I B= 2 0 m A
1 B a s e - E m i t t o r Voltage V B E ( V )
°C (
Cas
I C= 1 0 A
(Ca
ase
eT
1
5
Tem
emp
)
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
B a s e Current I B ( A )
( V CE= 4 V ) 200 D C Cur r e n t Gain h F E D C Cur r e n t Gain h F E
( V CE= 4 V ) 200 125°C
Transient Thermal Resistance j - a ( ° C / W )
h F E I C Characteristics (Typical)
h F E I C Temperature Characteristics (Typical)
j - a t Characteristics
3
100
Typ
100
25°C 30°C
1 0.5
50
50
20 0.02
0.1
0.5
1
5
10 14
30 0.02
0.1
0.5
1
5
10 14
0.1
1
10
100 T i m e t(ms)
1000 2000
C o l l e c t o r Current I C ( A )
C o l l e c t o r Current I C ( A )
f T I E Characteristics (Typical)
( V CE= 1 2 V ) 80 40
Safe Operating Area (Single Pulse)
80
1m s
P c T a Derating
C u t - o f f Fre q u e n c y f T ( M H Z )
10 60 C o l l e c t o r Cur r e n t I C ( A )
10
m
D
C
0m
s
M a x i m u m Power Dissipa t i o n P C ( W )
10
s
60
Typ
5
40
40
1 0.5 Without Heatsink Natural Cooling 0.1
20
20
Without Heatsink 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150
0 0.02
0.1
1
10
0.05 2
E m i t t e r Current I E ( A )
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
A m b i e n t Temperature Ta(°C)
34
3.0
2
W ith In fin ite he at si nk
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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