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Part: 2SB1559

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> Darlington

Description:

Company: Allegro Micro Systems, Inc.

Datasheet: Download 2SB1559 datasheet     File size : 149 kB

Request For quote: Find where to buy 2SB1559



Datasheet text preview:
(70) E

Darlington
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1559 ­160 ­150 ­5 ­8 ­1 80(Tc=25°C) 150 ­55 to +150 Unit V V V A A W °C °C

2SB1559
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=­160V VEB=­5V IC=­30mA VCE=­4V, IC=­6A IC=­6A, IB=­6mA IC=­6A, IB=­6mA VCE=­12V, IE=1A VCB=­10V, f=1MHz 2SB1559 ­100max ­100max ­150min 5000min ­2.5max ­3.0max 65typ 160typ V V MHz pF
20.0min 4.0max 3

B

Equivalent circuit

C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389)

Application : Audio, Series Regulator and General Purpose
(Ta=25°C) Unit
5.0±0.2

External Dimensions MT-100(TO3P)
15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1

µA µA
19.9±0.3

V

4.0

a b

ø3.2±0.1

2

02 1.05 +0..1 -

02 0.65 +0..1 -

hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

sTypical Switching Characteristics (Common Emitter)
VCC (V) ­60 RL () 10 IC (A) ­6 VBB1 (V) ­10 VBB2 (V) 5 IB1 (mA) ­6 IB2 (mA) 6 ton (µs) 0.7typ tstg (µs) 3.6typ tf (µs) 0.9typ

5.45±0.1 B C E

5.45±0.1

1.4

Weight : Approx 6.0g a. Type No. b. Lot No.

I C ­ V C E Characteristics (Typical)
m A

V C E ( s a t ) ­ I B Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) ­3

I C ­ V B E Temperature Characteristics (Typical)
­8 ( V CE= ­ 4 V )

­2

­8

mA

.5

­10

­2.0

mA

­1.8m

A

A ­1.5m ­1.3mA
­1.0mA
­0.8mA

C o l l e c t o r Current I C ( A )

C o l l e c t o r Current I C ( A )

­6

­6

­2

­8A ­6A I C= ­ 4 A

­4

­0.5mA

­4
p) Tem

emp se T (Ca

(Ca

se

I B= ­ 0 . 3 m A
­2

­1

°C

­2

25°C

125

0

0

­2

­4

­6

0 ­0.2

­0.5 ­1

­5

­10

­50 ­100 ­200

0

0

­1

­30

°C (

Cas

e Te

mp)

)

­2

­3

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

B a s e Current I B ( m A )

B a s e - E m i t t o r Voltage V B E ( V )

( V CE= ­ 4 V ) 40,000 D C C u r r e n t G a i n h FE D C C u r r e n t G a i n h FE 50000 125°C

( V CE= ­ 4 V )

Transient Thermal Resistance j - a ( ° C / W )

h F E ­ I C Characteristics (Typical)

h F E ­ I C Temperature Characteristics (Typical)

j - a ­ t Characteristics
4

Typ

25°C 10000 ­30°C 5000

10,000

1

5,000

0.5

2,000 ­0.2

­0.5

­1 C o l l e c t o r Current I C ( A )

­5

­8

1000 ­0.2

0.2 ­0.5 ­1 ­5 ­8 C o l l e c t o r Current I C ( A )

1

5

10

50 100 T i m e t(ms)

500 1000 2000

f T ­ I E Characteristics (Typical)
( V CE= ­ 1 2 V ) 100 ­20 ­10 C u t - o f f Fr e q u e n c y f T ( M H Z ) 80 C o l l e c t o r Curr e n t I C ( A )

Safe Operating Area (Single Pulse)
80
10
0m s

P c ­ T a Derating

m

s

­5

Typ
60

D

M a x i m u m Power Dissipat i o n P C ( W )

10

C

60

W ith In fin ite he

­1 ­0.5 W i t h o u t Heatsink N a t u r a l Cooling ­0.1

40

at si nk

40

20

20

W i t h o u t Heatsink 0 0.02 0.05 0.1 0.5 1 5 8 ­0.05 ­2 ­5 ­10 ­50 ­100 ­200 3.5 0 0 25 50 75 100 125 150

E m i t t e r Current I E ( A )

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

A m b i e n t Temperature Ta(°C)

46




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