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Part: 2SB1560
Category:
Discrete
-> Transistors
-> Bipolar
-> Darlington
-> PNP
Description: Darlington Silicon PNP Epitaxial Planar Transistor
Company: Allegro Micro Systems, Inc.
Datasheet: Download 2SB1560 datasheet File size : 149 kB
Request For quote: Find where to buy 2SB1560
Datasheet text preview:
(70) E
Darlington
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1560 160 150 5 10 1 100(Tc=25°C) 150 55 to +150 (Ta=25°C) Unit V V V A A W °C °C
2SB1560
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fr COB Conditions VCB=160V VEB=5V IC=30mA VCE=4V, IC=7A IC=7A, IB=7mA IC=7A, IB=7mA VCE=12V, IE=2A VCB=10V, f=1MHz 2SB1560 100max 100max 150min 5000min 2.5max 3.0max 50typ 230typ V V MHz pF
20.0min 4.0max 3
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)
Application : Audio, Series Regulator and General Purpose
(Ta=25°C) Unit
5.0±0.2 1.8
External Dimensions MT-100(TO3P)
15.6±0.4 9.6 2.0 4.8±0.2 2.0±0.1
µA µA
19.9±0.3
V
4.0
a b
ø3.2±0.1
2
02 1.05 +0..1 -
02 0.65 +0..1 -
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 70 RL () 10 IC (A) 7 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 7 IB2 (mA) 7 ton (µs) 0.8typ tstg (µs) 3.0typ tf (µs) 1.2typ
5.45±0.1 B C E
5.45±0.1
1.4
Weight : Approx 6.0g a. Type No. b. Lot No.
I C V C E Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V )
mA
V C E ( s a t ) I B Characteristics (Typical)
3
I C V B E Temperature Characteristics (Typical)
10 ( V CE= 4 V )
10
2
.
A 5m
2.0
mA
10
1.5mA
1.2mA
C o l l e c t o r Current I C ( A )
1.0mA
2
6
0.8mA 0.6mA
C o l l e c t o r Current I C ( A )
8
8
6
10A 7A I C= 5 A 1
)
emp
ase T
I B= 0 . 4 m A
Temp (Case 25°C
4
4
0
0
2
4
6
0 0.2
0.5 1
5
10
50 100 200
0
0
1
30°C
125°
2
2
C (C
(Case
Temp
)
)
2
2.5
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
B a s e Current I B ( m A )
B a s e - E m i t t o r Voltage V B E ( V )
( V CE= 4 V ) 40,000 D C Curr e n t Gain h F E D C Curr e n t Gain h F E 50000
( V CE= 4 V )
Transient Thermal Resistance j - a ( ° C / W )
h F E I C Characteristics (Typical)
h F E I C Temperature Characteristics (Typical)
j - a t Characteristics
3
125°C 10000 5000
Typ
10,000 5,000
25°C 30°C
1 0.5
1000 1,000 0.2 0.5 1 C o l l e c t o r Current I C ( A ) 5 10 500 0.2 0.5 1 C o l l e c t o r Current I C ( A ) 5 10
0.1
1
5
10
50 100 T i m e t(ms)
500 1000 2000
f T I E Characteristics (Typical)
( V CE= 1 2 V ) 100 30
Safe Operating Area (Single Pulse)
100
P c T a Derating
80 C u t - o f f F r e q u e n c y f T( M H Z) C o l l e c t o r Cu r r e n t I C ( A )
10 5
10
DC
0m
m
s
s
M a x i m u m Power Dissipation P C ( W )
10
W ith In fin
60
Typ
ite he
1 0.5 W i t h o u t Heatsink N a t u r a l Cooling 0.1
50
at si nk
40
20
0 0.02
0.05 0.1
0.5
1
5
10
0.05 3
5
10
50
100
200
3.5 0
W i t h o u t Heatsink 0 25 50 75 100 125 150
E m i t t e r Current I E ( A )
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
A m b i e n t Temperature Ta(°C)
47
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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