Details, datasheet, quote on part number: 2SB1625
CategoryDiscrete => Transistors => Bipolar => Darlington => PNP
DescriptionDarlington Silicon PNP Epitaxial Planar Transistor
CompanyAllegro Micro Systems, Inc.
DatasheetDownload 2SB1625 datasheet
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Features, Applications

Symbol VCBO VCEO VEBO PC Tj Tstg +150 (Ta=25C) Unit C
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions 110typ V
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494)
Application : Audio, Series Regulator and General Purpose

VCC (V) 6 IC (A) 5 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 5 IB2 (mA) 5 ton (s) 1.1typ tstg (s) 3.2typ tf (s) 1.1typ


Some Part number from the same manufacture Allegro Micro Systems, Inc.
2SB1626 Darlington Silicon PNP Epitaxial Planar Transistor
2SC2023 Silicon NPN Triple Diffused Planar Transistor
2SC2837 Lapt Silicon NPN Epitaxial Planar Transistor
2SC3179 Silicon NPN Triple Diffused Planar Transistor
2SC3263 Lapt Silicon NPN Epitaxial Planar Transistor
2SC3264 Silicon NPN Epitaxial Planar Transistor
2SC3678 Silicon NPN Triple Diffused Planar Transistor
2SC3680 Silicon NPN Triple Diffused Planar Transistor
Same catergory

2N3859A : Amplifier. NPN General Purpose Amplifier. This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TST Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current.

2SK2252-01L : . High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=30V Guarantee Avalanche-proof Applications Switching regulators UPS DC-DC converters General purpose power amplifier Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Continuous.

BLS2731-50 : Microwave. BLS2731-50; Microwave Power Transistor. Suitable for short and medium pulse applications Internal input and output matching networks for an easy circuit design Emitter ballasting resistors improve ruggedness Gold metallization ensures excellent reliability Interdigitated emitter-base structure provides high emitter efficiency Multicell geometry improves power sharing and reduces thermal resistance.

BTS620L1 : Smart Two Channel Highside Power Switch ( Overload Protection Current Limitation Short Circuit Protection Thermal Shutdown ).

BUX78 : Screening Options Available = ;; Polarity = PNP ;; Package = TO66 (TO213AA) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 30 ;; HFE(max) = - ;; @ Vce/ic = 5V / 5A ;; FT = 2.5MHz ;; PD = 40W.

BZV85-6V8 : Voltage Regulator Diodes. Total power dissipation: max. 1.3 W Tolerance series: approx. 5% Working voltage range: nom. V (E24 range) Non-repetitive peak reverse power dissipation: max. 60 W. APPLICATIONS Stabilization purposes. Medium-power voltage regulator diodes in hermetically sealed leaded glass SOD66 (DO-41) packages. The diodes are available in the normalized E24 approx.

D6L20U : Super Fast Recoveryrectifiers / Single (Two Terminal Type). Low noise trr35ns Fully Isolated Molding APPLICATION Switching power supply Free Wheel Home Appliances, Office Equipment Telecommunication, Factory Automation Absolute Maximum Ratings (If not specified Tc=25) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO Average Rectified Forward Current.

MG600Q1US4 : GTR Module Silicon N Channel Igbt.

MRF1090MA : 90 W, Microwave Power Transistor NPN Silicon. Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry Standard Package Nitride Passivated Gold Metallized for Long Life and Resistance.

SLA4030 : Array. Sink Driver General Purpose. Symbol VCBO VCEO VEBO IC ICP IB PT VISO Tj Tstg Ratings (Tc=25C) 1000 (Between fin and lead pin, AC) +150 5 Symbol ICBO IEBO VCEO hFE VCE(sat) 1.5 V min typ max 10 Unit With Silicone Grease Natural Cooling Heatsink: Aluminum in mm .

TIP29 : IC(A) = 1, VCBO(V) = 40, VCEO(V) = 40, PD(W) = 30, Package = TO-220, HFE(Min/Max) = 15/75, IC/VCE(A/V) = 1.0/4.0, VCE(SAT)(V) = 0.7, ic / IB(A/mA) = 1.0/125.

ASVC-0806-1R0J : 1 ELEMENT, 1 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: Iron ; Lead Style: Radial, FLAT ; Standards and Certifications: RoHS ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 1 microH ; Inductance Tolerance: 5 (+/- %) ; DCR: 0.0052 ohms ; Rated DC Current:.

B41821A8157M007 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 63 V, 150 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 150 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 63 volts ; Leakage Current: 95 microamps ; ESR: 1300 milliohms ; Mounting Style: Through Hole ; Operating.

B57863-S103-G40 : RESISTOR, TEMPERATURE DEPENDENT, NTC, 10000 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Bolt-on Chassis, Radial Leads, RADIAL LEADED ; Resistance Range: 10000 ohms ; Tolerance: 2 +/- % ; Power Rating: 0.0600 watts (8.04E-5 HP) ; Operating Temperature: -55 to 155 C (-67 to 311 F) ; Standards and Certifications:.

MBW : RESISTOR, FUSIBLE, FILM, 0.25 W, 2; 5 %, 1 ohm - 10000 ohm, SURFACE MOUNT. s: Category / Application: Fusible Resistor, General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), MELF ; Operating DC Voltage: 200 volts ; Operating Temperature: -55 to 25 C (-67 to 77 F).

MHL1JTTTD39NJ : 1 ELEMENT, 0.039 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ceramic ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Inductance Range: 0.0390 microH ; Rated DC Current: 500 milliamps ; Operating.

NFL15ST157X0J3P : FERRITE CHIP. Noise Suppression Products/EMI Suppression Filters > EMIFILr (LC Combined) > Multilayer Type (Top View) (1) (2) (Side View) 0.50.15 (3) Polarity Marking 0.350.15 Insertion Loss (dB) 40 NFL15ST507X0J3 Rated Current Rated Voltage Insulation Resistance (min.) Withstand Voltage 6.3Vdc 1000M ohm 1000M ohm 1000M ohm 1000M ohm 18.9Vdc 22pF (Typ.) 115nH.

RN73N2X1001B-T10-LF : RESISTOR, THIN FILM, 0.1 W, 0.1 %, 10 ppm, 1000 ohm, SURFACE MOUNT, 0805. s: Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0805, CHIP, ROHS COMPLIANT ; Resistance Range: 1000 ohms ; Tolerance: 0.1000 +/- % ; Temperature Coefficient: 10 ±ppm/°C ; Power.

SST6838T116 : 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: SST3, 3 PIN.

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