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Part: 2SC3179

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> General Purpose
         -> NPN

Description: Silicon NPN Triple Diffused Planar Transistor

Company: Allegro Micro Systems, Inc.

Datasheet: Download 2SC3179 datasheet     File size : 195 kB

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Datasheet text preview:
2SC3179
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3179 80 60 6 4 1 30(Tc=25°C) 150 ­55 to +150 Unit V V V A A W °C °C
2.5 BCE

Application : Audio and General Purpose
(Ta=25°C)

sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=80V VEB=6V IC=25mA VCE=4V, IC=1V IC=2A, IB=0.2A VCE=12V, IE=­0.2A VCB=10V, f=1MHz 100max 100max 60min 40min 0.6max 15typ 60typ

External Dimensions MT-25(TO220)
3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1

2SC3179

Unit

µA µA
V V pF
12.0min 16.0±0.7 8.8±0.2

a b

ø3.75±0.2

4.0max

MHz

1.35

02 0.65 +0..1 -

sTypical Switching Characteristics (Common Emitter)
VCC (V) 20 RL () 10 IC (A) 2 VBB1 (V) 10 VBB2 (V) ­5 IB1 (mA) 200 IB2 (mA) ­200 ton (µs) 0.2typ tstg (µs) 1.9typ tf (µs) 0.29typ

2.5

1.4

Weight : Approx 2.6g a. Type No. b. Lot No.

I C ­ V C E Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) 4
00 m A
80m A

V C E ( s a t ) ­ I B Characteristics (Typical)

I C ­ V B E Temperature Characteristics (Typical)
4 ( V CE= 4 V )

IB

=1

60mA

C o l l e c t o r Current I C ( A )

40mA 30mA

2
20mA

C o l l e c t o r Current I C ( A )

3

1.0

3

2
p) em

) mp Te se C(

eT

(C

12

25°

I C= 1 A

0

0

1

2

3

4

0 0.005 0.01

0.05

0.1

0.5

1

0 0.4

0.6

0.8

­30

°C

2A

5°C

1

10mA

1

(Ca

Ca

3A

as

se

Te

0.5

mp

)

1.0

1.2

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

B a s e Current I B ( A )

B a s e - E m i t t o r Voltage V B E ( V )

( V CE= 4 V ) 500 D C Cur r e n t Gai n h F E D C C u r r e n t G a i n h FE 200 125°C 100 25°C ­30°C 50

( V CE= 4 V )

Transient Thermal Resistance j - a ( ° C / W )

h F E ­ I C Characteristics (Typical)

h F E ­ I C Temperature Characteristics (Typical)

j - a ­ t Characteristics
5

Typ
100

50

1

20 0.01

0.1

0.5

1

4

20 0.02

0.1

0.5

1

4

0.5

1

10 T i m e t(ms)

100

1000

C o l l e c t o r Current I C ( A )

C o l l e c t o r Current I C ( A )

f T ­ I E Characteristics (Typical)
40 ( V CE= 1 2 V ) 10

Safe Operating Area (Single Pulse)
30
1m

P c ­ T a Derating

5 C u t - o f f F r e q u e n c y f T( M H Z) 30 C o l l e c t o r Cu r r e n t I C ( A )
D C

M a x i m u m Power Di s s i p a t i o n P C ( W )

10 m
10 0m s

s

s

W ith

20

In fin ite he

20

Typ

at si nk

1

10

10

0.5

W i t h o u t Heatsink N a t u r a l Cooling

W i t h o u t Heatsink 2 0 ­0.005 ­0.01 0.2 ­0.1 ­0.5 ­1 ­4 3 10 50 100 E m i t t e r Current I E ( A ) C o l l e c t o r - E m i t t e r Voltage V C E ( V ) 0 0 25 50 75 100 125 150

A m b i e n t Temperature Ta(°C)

62




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