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Part: 2SC4301
Category: Discrete -> Transistors -> Bipolar -> General Purpose -> NPN
Description: Silicon NPN Triple Diffused Planar Transistor
Company: Allegro Micro Systems, Inc.
Datasheet: Download 2SC4301 datasheet File size : 192 kB
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Datasheet text preview:
2SC4301
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4301 900 800 7 7(Pulse14) 3.5 80(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=1A VCB=10V, f=1MHz
(Ta=25°C) 2SC4301 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 105typ V V MHz pF Unit
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
µA
V
23.0±0.3 9.5±0.2
µA
a b
16.2
1.75 2.15
02 1.05 +0..1 -
3.3
0.8
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL () 83 IC (A) 3 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.45 IB2 (A) 1.5 ton (µs) 1max tstg (µs) 5max tf (µs) 1max
5.45±0.1 1.5 4.4
5.45±0.1 1.5
02 0.65 +0..1 -
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
I C V C E Characteristics (Typical)
1A
700mA
V C E ( s a t ) , V B E ( s a t ) I C Temperature Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) B a s e - E m i t t e r Saturation Voltage V B E ( s a t ) ( V ) ( I C/ I B= 5 )
I C V B E Temperature Characteristics (Typical)
7 ( V CE= 4 V )
6
500mA
1
55°C p) (Case Tem
ase Tem p)
V BE( s a t ) C o l l e c t o r Current I C ( A )
6
C o l l e c t o r Current I C ( A )
p)
4
300mA
25°C (C
4
Temp
Tem
)
ase
2
(C
12
5
°C
V CE( s a t ) 0 0.02 0.05 0.1 0.5 1
5
0
25
°C
5°C
0
1
2
3
4
57
0
0
0.2
0.4
125°
2
0.6
0.8
55°C (C
eT
25°C
I B= 1 0 0 m A
as
C (C
(Case
emp
125°C
(C
ase Tem
200mA
emp ase T
)
)
p)
1.0
3.0
1.2
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
C o l l e c t o r Current I C ( A )
B a s e - E m i t t o r Voltage V B E ( V )
( V CE= 4 V ) 50 D C C u r r e n t G a i n h FE 10
Transient Thermal Resistance j - a ( ° C / W )
h F E I C Characteristics (Typical)
5°
S w i t c h i n g Time ton·t s t g · t f ( µ s )
t o n · t s t g · t f I C Characteristics (Typical)
j - a t Characteristics
2
12
25°C
C
5 VCC 250V I C : I B 1 : I B 2 = 2 : 0 . 3 : 1 Const.
t stg
1
55°C
0.5
1 0.5 t on 0.2 0.1
tf
10
5 0.02
0.05
0.1
0.5
1
5
7
0.5
1
5
7
0.1
1
10 T i m e t(ms)
100
1000
C o l l e c t o r Current I C ( A )
C o l l e c t o r Current I C ( A )
Safe Operating Area (Single Pulse)
20 10
10 0µ s
Reverse Bias Safe Operating Area
20 10 5 C o l l e c t o r Cur r e n t I C ( A ) 80
P c T a Derating
M a x i m u m Powe r Dissipation P C ( W )
C o l l e c t o r Cu r r e n t I C ( A )
5
60
W ith In fin ite he
40
at si
1
1 Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty :less than1%
nk
0.5
W i t h o u t Heatsink N a t u r a l Cooling
0.5
20
W i t h o u t Heatsink 0.1 50 100 500 1000 0.1 50 100 500 1000 3.5 0 0 25 50 75 100 125 150
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
A m b i e n t Temperature Ta(°C)
99
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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