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Part: 2SC4301

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> General Purpose
         -> NPN

Description: Silicon NPN Triple Diffused Planar Transistor

Company: Allegro Micro Systems, Inc.

Datasheet: Download 2SC4301 datasheet     File size : 192 kB

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Datasheet text preview:
2SC4301
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4301 900 800 7 7(Pulse14) 3.5 80(Tc=25°C) 150 ­55 to +150 Unit V V V A A W °C °C

sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=­1A VCB=10V, f=1MHz

(Ta=25°C) 2SC4301 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 105typ V V MHz pF Unit

External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6

µA
V
23.0±0.3 9.5±0.2

µA

a b

16.2

1.75 2.15
02 1.05 +0..1 -

3.3

0.8

sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL () 83 IC (A) 3 VBB1 (V) 10 VBB2 (V) ­5 IB1 (A) 0.45 IB2 (A) ­1.5 ton (µs) 1max tstg (µs) 5max tf (µs) 1max

5.45±0.1 1.5 4.4

5.45±0.1 1.5

02 0.65 +0..1 -

3.35

B

C

E

Weight : Approx 6.5g a. Type No. b. Lot No.

I C ­ V C E Characteristics (Typical)
1A
700mA

V C E ( s a t ) , V B E ( s a t ) ­ I C Temperature Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) B a s e - E m i t t e r Saturation Voltage V B E ( s a t ) ( V ) ( I C/ I B= 5 )

I C ­ V B E Temperature Characteristics (Typical)
7 ( V CE= 4 V )

6
500mA

1
­55°C p) (Case Tem
ase Tem p)

V BE( s a t ) C o l l e c t o r Current I C ( A )

6

C o l l e c t o r Current I C ( A )

p)

4

300mA

25°C (C

4

Temp

Tem

)

ase

2

(C

12

5

°C

V CE( s a t ) 0 0.02 0.05 0.1 0.5 1

­5

0

25

°C

5°C

0

1

2

3

4

57

0

0

0.2

0.4

125°

2

0.6

0.8

­55°C (C

eT

25°C

I B= 1 0 0 m A

as

C (C

(Case

emp

125°C

(C

ase Tem

200mA

emp ase T

)

)

p)

1.0

3.0

1.2

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

C o l l e c t o r Current I C ( A )

B a s e - E m i t t o r Voltage V B E ( V )

( V CE= 4 V ) 50 D C C u r r e n t G a i n h FE 10

Transient Thermal Resistance j - a ( ° C / W )

h F E ­ I C Characteristics (Typical)

S w i t c h i n g Time ton·t s t g · t f ( µ s )

t o n · t s t g · t f ­ I C Characteristics (Typical)

j - a ­ t Characteristics
2

12

25°C

C

5 VCC 250V I C : I B 1 : I B 2 = 2 : 0 . 3 : ­ 1 Const.

t stg

1

­55°C

0.5

1 0.5 t on 0.2 0.1

tf

10

5 0.02

0.05

0.1

0.5

1

5

7

0.5

1

5

7

0.1

1

10 T i m e t(ms)

100

1000

C o l l e c t o r Current I C ( A )

C o l l e c t o r Current I C ( A )

Safe Operating Area (Single Pulse)
20 10
10 0µ s

Reverse Bias Safe Operating Area
20 10 5 C o l l e c t o r Cur r e n t I C ( A ) 80

P c ­ T a Derating

M a x i m u m Powe r Dissipation P C ( W )

C o l l e c t o r Cu r r e n t I C ( A )

5

60

W ith In fin ite he

40

at si

1

1 Without Heatsink Natural Cooling L=3mH IB2=­1.0A Duty :less than1%

nk

0.5

W i t h o u t Heatsink N a t u r a l Cooling

0.5

20

W i t h o u t Heatsink 0.1 50 100 500 1000 0.1 50 100 500 1000 3.5 0 0 25 50 75 100 125 150

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

C o l l e c t o r - E m i t t e r Voltage V C E ( V )

A m b i e n t Temperature Ta(°C)

99




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