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Part: 2SC5287
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
Description: Silicon NPN Triple Diffused Planar Transistor (high Voltage Switching Transistor)
Company: Allegro Micro Systems, Inc.
Datasheet: Download 2SC5287 datasheet File size : 241 kB
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Datasheet text preview:
2SC5287
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5287 900 550 7 5(Pulse10) 2.5 80(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
(Ta=25°C) 2SC5287 100max 100max 550min 10 to 25 0.5max 1.2max 6typ 50typ V MHz pF
5.45±0.1 B C E 20.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1.8A IC=1.8A, IB=0.36A IC=1.8A, IB=0.36A VCE=12V, IE=0.35A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
µA µA
V
19.9±0.3
4.0
a b
ø3.2±0.1
V
2 3
02 1.05 +0..1 02 0.65 +0..1 -
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL () 139 IC (A) 1.8 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.27 IB2 (A) 0.9 ton (µs) 0.7max tstg (µs) 4.0max tf (µs) 0.5max
5.45±0.1
1.4
Weight : Approx 6.0g a. Type No. b. Lot No.
I C V C E Characteristics (Typical)
5
0 70 mA
600mA
V C E ( s a t ) , V B E ( s a t ) I C Temperature Characteristics (Typical)
C o l l e c t o r - E m i t t e r Saturation Voltage V C E ( s a t ) ( V ) B a s e - E m i t t e r Saturation Voltage V B E ( s a t ) ( V ) 1.5 I C / I B = 5 Const.
I C V B E Temperature Characteristics (Typical)
( V CE= 4 V ) 7
4 C o l l e c t o r Current I C ( A )
400mA
6 C o l l e c t o r Current I C ( A ) 0.5 1 57
5
250mA
3
1.0 V BE( s a t )
4
150mA
2
3
0.5
I B= 5 0 m A
2
1
1 V CE( s a t ) 0 0.03 0.05 0.1 0 0 0.5 1.0
0
0
1
2
3
4
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
C o l l e c t o r Current I C ( A )
B a s e - E m i t t o r Voltage V B E ( V )
( V CE= 4 V ) 40 D C Cur r e n t Gain h F E S w i t c h i n g T i m e ton·t s t g · t f ( µ s ) 125°C 25°C
Transient Thermal Resistance j - a ( ° C / W )
h F E I C Characteristics (Typical)
6 5
t o n · t s t g · t f I C Characteristics (Typical)
j - a t Characteristics
3
V C C 250V I C: I B1: I B2= 1 : 0 . 1 5 : 0 . 5 1 0.5 t on 0.1 0.2 tf
t stg
55°C 10
1
0.5
5 4 0.02
0.05
0.1
0.5
1
5
10
0.5
1
5
0.3
1
10 T i m e t(ms)
100
1000
C o l l e c t o r Current I C ( A )
C o l l e c t o r Current I C ( A )
Safe Operating Area (Single Pulse)
20 10
10
Reverse Bias Safe Operating Area
20 80
P c T a Derating
50
0µ s
5 C o l l e c t o r Cu r r e n t I C ( A )
5 C o l l e c t o r Cu r r e n t I C ( A )
M a x i m u m Powe r Dissipat i o n P C ( W )
µs
10
60
W ith In fin ite
1 0.5
1 0.5 Without Heatsink Natural Cooling IB2=1.0A L=3mH Duty:less than 1%
he
40
at si nk
Without Heatsink Natural Cooling 0.1 0.05 0.03 10 50 100 500
20
0.1 0.05 0.03 50
W i t h o u t Heatsink 100 500 1000 3.5 0 0 25 50 75 100 125 150
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
C o l l e c t o r - E m i t t e r Voltage V C E ( V )
A m b i e n t Temperature Ta(°C)
133
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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